SANYO CPH3305 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6426

CPH3305

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : JE

D

D

R
R

Package Dimensions

unit:mm

2152A

[CPH3305]

2.9

0.4

3

1.6 0.60.6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %12.3–A

PD

Mounted on a ceramic board (900mm2×0.8mm)

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1–=

0=06–V

SG

V,V06–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–4.2–V

D

A4.0–=5.08.0S

D

V,A4.0–=
V,A2.0–=

V01–=0890031mΩ

SG

V4–=00310081mΩ

SG

zHM1=f,V02–=57Fp
zHM1=f,V02–=22Fp
zHM1=f,V02–=7Fp

2

1.9

0.7 0.2

2.8

0.9

0.15

0.2

0.05

1 : Gate
2 : Source
3 : Drain

SANYO : CPH3

sgnitaR

nimpytxam

Continued on next page.

06–V
02±V

8.0–A

1W

˚C
˚C

tinU

60100TS (KOTO) TA-2306 No.6426-1/4

CPH3305

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

DS

S

V,A8.0–=

SG

Switching Time Test Circuit

VDD=--30V

V

IN

0V

--10V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=--0.4A

RL=75Ω

V

OUT

tiucriCtseTdeificepseeS6sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS12sn
tiucriCtseTdeificepseeS61sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=48.0–2.1–V

nimpytxam

A8.0–=7.3Cn

D

A8.0–=6.0Cn

D

A8.0–=5.0Cn

D

sgnitaR

tinU

--0.8

--0.6

–A

D

--0.4

Drain Current, I

--0.2

2500

P.G

0

0

50Ω

I

D

-- V

S

CPH3305

DS

--5.0V

--8.0V

--6.0V

--4.0V

--3.5V

--3.0V

--10.0V

VGS=--2.5V

--0.4

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

IT01179

Ta=25°C

I

-- V

--1.6

VDS=--10V

--1.4

--1.2

–A

--1.0

D

--0.8

--0.6

Drain Current, I

--0.4

--0.2

0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

D

GS

Gate-to-Source Voltage, VGS–V

2500

RDS(on) -- Ta

Ta=--25

°C

75°C

IT01180

25

°C

2000

–mΩ

1500

DS(on)

ID=--0.2A

1000

500

Static Drain-to-Source

On-State Resistance, R

0

0 --2 --4 --6 --8 --10 --12

--0.4A

Gate-to-Source Voltage, V

--14 --16 --18 --20

–V

GS

IT01181

2000

–mΩ

1500

DS(on)

1000

500

Static Drain-to-Source

On-State Resistance, R

0

--60 40--40 --20 12020 60 80 100 1601400

=--4V

GS

=--0.2A, V

I

D

=--10V

GS

=--0.4A, V

I

D

Ambient Temperature, Ta – ˚C

IT01182

No.6426-2/4