Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Silicon Epitaxial Planar Transistor
DC/DC Converter Applications
Ordering number:EN6073
CPH3206
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High speed switching.
· Ultrasmall-sized package permitting CPH3206applied sets to be made small and slim (0.9mm).
· High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2150
2.9
0.4
3
1
Mounted on a ceramic board (600mm2×0.8mm)
2
1.9
[CPH3206]
2.8
1.6 0.60.6
0.9
0.7 0.2
0.15
0.2
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
51V
51V
5V
3A
5A
006Am
9.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
V
T
OBC
OBE
EF
1ICI,A5.1=
)tas(EC
2ICI,A3=
)tas(EC
)tas(EB
V
V
V
V
I
C
I,V21=
BC
BE
EC
EC
BC
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V2=
Am005=
C
I,V2=
Am005=
C
zHM1=f,V01=
Am03=
B
Am06=
B
I,A5.1=
Am03=58.02.1V
B
61899TS (KOTO) TA-1513 No.6073–1/4
sgnitaR
nimpytxam
002065
083zHM
32Fp
001051Vm
081072Vm
Continued on next page.
tinU
Continued from preceding page.
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
Switching Time Test Circuit
CPH3206
I
egatloVnwodkaerBrettimE-ot-rotcelloCV
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,Aµ01=
C
C
E
0=51V
E
R,Am1=
=∞ 51V
EB
I,Aµ01=
0=5V
C
.tiucriCtseTdeificepseeS03sn
.tiucriCtseTdeificepseeS012sn
.tiucriCtseTdeificepseeS11sn
sgnitaR
nimpytxam
tinU
–A
C
Collector Current, I
PW=20µs
D.C.≤1%
INPUT
V
R
50Ω
VBE=–5V VCC=5V
20IB1=–20IB2=IC=1.5A
5
4
3
2
1
IB1
IB2
1kΩ
+
220µF 470µF
IC-
V
A
60m
40mA
CE
+
=
I
B
OUTPUT
R
L
A11949
1mA
0
25mA
20mA
15mA
10mA
5mA
2mA
–A
C
Collector Current, I
5
IC-
25mA
40mA
4
V
CE
20mA
15mA
3
10mA
2
5mA
1
=
1mA
I
0
B
2mA
0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE–V
6.0
VCE=2V VCE=2V
5.5
5.0
4.5
–A
4.0
C
3.5
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5
0
0 0.2 0.4 0.6 1.00.8
IC-
V
BE
°C
°C
°C
25
–25
Ta=75
Base-to-Emitter Voltage, VBE–V
0
012345
Collector-to-Emitter Voltage, VCE–V
h
-
1000
FE
DC Current Gain, h
FE
7
Ta=75
–25
°C
25
°C
°C
5
3
2
100
2 3 57 2 3 57 2 3 57
I
C
1.0 100.01 0.1
Collector Current, IC–A
No.6073–2/4