SANYO CPH3120 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP Epitaxial Planar Silicon Transistor

Compact Motor Driver Applications

Ordering number:ENN6353

CPH3120

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2.9

Features

· Small saturation voltage.

· Contains a diode between collector and emitter.

· Contains bias resistance between base and emitter.

· Large current capacity.

· Compact package facilitates implementation of high­density, small-sized hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

OBC
OEC
OBE

C

PC

Mounted on a ceramic board (600mm2×0.8mm)

C

V

OBC

h

V

EF

V

T

I

)tas(EC

C

I

)tas(EB

C

Package Dimensions

unit:mm

2150A

[CPH3120]

2.8

0.9

0.15

0.2

0.05

1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3

sgnitaR

nimpytxam

07

002zHM
03Fp
011–002–Vm

Continued on next page.

02–V
51–V
5–V

8.0–A
2–A

9.0W

˚C
˚C

tinU

0.4

3

1.6 0.60.6

1

I,V51–=

BC
EC
EC
BC

0=0.1–Aµ

E

I,V2–=

A5.0–=

C

I,V2–=

A5.0–=

C

zHM1=f,V01–=

I,Am005–=

Am01–=

B

I,Am005–=

Am01–=18.0–3.1–V

B

2

1.9

0.7 0.2

13100TS (KOTO) TA-2476 No.6353–1/4

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egatloVdrawroFedoiDV

ecnatsiseRrettimE-ot-esaBR

Electrical Connection

3

1

R

BE

2

CPH3120

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

1 : Base
2 : Emitter
3 : Collector

I

OBC)RB(

C

I

OEC)RB(

C

I

F

E

EB

I,Aµ01–=

0=02–V

E
R,Am01–=

=∞ 51–V

EB

A5.0–= 5.1–V

sgnitaR

nimpytxam

6.1kΩ

tinU

--2.0

--1.6

–A

C

--1.2

--16mA

C

--12mA

--10mA

CE

--14mA

I

-- V

--8mA

--0.8

Collector Current, I

--0.4

0

0

--0.4 --0.8 --1.2 --1.6 --2.0

Collector-to-Emitter Voltage, VCE–V

I

-- V

--2.0

VCE=--2V

--1.8

--1.6

–A

--1.4

C

--1.2

--1.0

--0.8

--0.6

Collector Current, I

--0.4

--0.2
0

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

C

Ta=75°C

BE

25°C

Base-to-Emitter Voltage, VBE–V

--6mA

--25°C

--4mA

--2mA
IB=0

IT01556

IT01558

–mA

C

Collector Current, I

FE

DC Current Gain, h

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

100

0

3

2

7
5

3
2

10

7
5

--0.01

0

I

-- V

C

CE

--6mA

--5mA

--4mA

--3mA

--2 --4 --6 --8 --10

Collector-to-Emitter Voltage, VCE–V

h

-- I

FE

C

VCE=--2V

°C

Ta=75

°C

25

--25°C

23 57

--0.1

23 57

--1.0

Collector Current, IC–A

--2mA

--1mA
IB=0

IT01557

23

IT01559

No.6353–2/4