SANYO CPH3106 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Silicon Epitaxial Planar Transistor
DC/DC Converter Applications
Ordering number:EN6005
CPH3106
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High speed switching.
· Ultrasmall-sized package permitting applied sets to
be made small and slim (0.9mm).
· High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2150
2.9
0.4
3
1
Mounted on a ceramic board (600mm2×0.8mm)
2
1.9
[CPH3106]
2.8
1.6 0.60.6
0.9
0.7 0.2
0.15
0.2
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
51–V
21–V
5–V
3–A
5–A
006Am
9.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V21–=
BC
BE
EC
EC
BC
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
I,V2–=
C
I,V2–=
C
I,A5.1–=
B
I,A5.1–=
B
Am005–=
Am005–=
zHM1=f,V01–=
Am03–=
Am03–=58.0–2.1–V
Marking : AF
61899TS (KOTO) TA-1493 No.6005–1/4
sgnitaR
nimpytxam
002065
082zHM
63Fp
011–561–Vm
Continued on next page.
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
Switching Time Test Circuit
CPH3106
I
OBC)RB(
egatloVnwodkaerBrettimE-ot-rotcelloCV
C
I
OEC)RB(
C
I
OBE)RB(
C
no
gts
f
I,Aµ01–=
0=51–V
E
R,Am1–=
=∞ 21–V
EB
I,Aµ01–=
0=5–V
C
.tiucriCtseTdeificepseeS03sn
.tiucriCtseTdeificepseeS09sn
.tiucriCtseTdeificepseeS01sn
sgnitaR
nimpytxam
tinU
PW=20µs
D.C.≤1%
INPUT
IB1
IB2
OUTPUT
1kΩ
R
L
50Ω
V
R
+
+
220µF 470µF
VBE=5V VCC=–5V
–20IB1=20IB2=IC=–1.5A
A11499
-2.0
-1.8
-1.6
–A
C
Collector Current, I
–16mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0 -0.2 -0.4 -0.6 -0.8 -1.0
IC-
V
CE
–14mA
–12mA
Collector-to-Emitter Voltage, VCE–V
-3.5
-3.0
-2.5
–A
IC-
V
BE
VCE=–2V VCE=–2V
C
-2.0
-1.5
-1.0
Collector Current, I
-0.5
0
0 -0.2 -0.4 -0.6 -1.2-1.0-0.8
Base-to-Emitter Voltage, VBE–V
–10mA
–8mA
–6mA
–4mA
–2mA
=
I
B
-200
-180
-160
-140
–mA
C
-120
-100
-80
-60
Collector Current, I
-40
0
-20
0
0-1-2-3-4-5
IC-
V
CE
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=
I
B
0
Collector-to-Emitter Voltage, VCE–V
1000
7
5
3
2
FE
100
7
5
3
2
10
DC Current Gain, h
7
5
3
2
1.0
-0.01 0.1 -1.0 -10
hFE-
I
C
222357- 357 3 57
Collector Current, IC–A
No.6005–2/4
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