Sanyo 5LP02N Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6564

5LP02N

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

5.0

4.0

0.5

0.6

2.0

14.0

5.0

0.45

0.45

4.0

0.44

1.3

1.3

123

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2178

[5LP02N]

1 : Source
2 : Drain
3 : Gate
SANYO : NP

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %165.0–A

PD

05–V
01±V

41.0–A

4.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R
R

SG

SD
SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01–=

1)no(IDV,Am07–=

2)no(IDV,Am04–=

3)no(IDV,Am01–=

I

D

V
V

V,Am1–=

0=05–V

SG

V,V05–=

SD
SG

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

Aµ001–=4.0–4.1–V

D

Am07–=71.042.0S

D

V4–=1.56.6

SG

V5.2–=64.8

SG

V5.1–=0102

SG

nimpytxam

Marking : XE Continued on next page.

D2000TS (KOTO) TA-2968 No.6564-1/4

sgnitaR

tinU

Ω
Ω
Ω

5LP02N

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

d

r

d

f

DS

SD
SD
SD

)no(tiucriCtseTdeificepseeS02sn

)ffo(tiucriCtseTdeificepseeS052sn

I

S

Switching Time Test Circuit

zHM1=f,V01–=82Fp
zHM1=f,V01–=11Fp
zHM1=f,V01–=5.3Fp

tiucriCtseTdeificepseeS54sn

tiucriCtseTdeificepseeS021sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

V,Am041–=

0=38.0–2.1–V

SG

sgnitaR

nimpytxam

D
D
D

Am041–=89.1Cn
Am041–=22.0Cn
Am041–=33.0Cn

tinU

--0.14

--0.12

--0.10

–A

D

--0.08

--0.06

--0.04

Drain Current, I

--0.02

0V

--4V
PW=10µs

D.C.≤1%

P.G

V

IN

--4.0V

--3.5V

--6.0V

V

IN

G

50Ω

VDD= --25V

D

I

-- V

D

--3.0V

--2.5V

--2.0V

ID= --70mA
RL=357Ω

V

5LP02N

S

DS

OUT

V

GS

= --1.5V

--0.30

--0.25

–A

--0.20

D

--0.15

--0.10

Drain Current, I

--0.05

I

D

-- V

GS

Ta= --25

°C

VDS= --10V

75°C

25°C

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

ID= --70mA

– Ω

(on)

7

DS

--40mA

6

4

3

Static Drain-to-Source

On-State Resistance, R

02--1

--25--3

--48--59--610--7 --8 --9 --10

Gate-to-Source Voltage, VGS–V

IT00287

Ta=25°C

IT00289

0

0

--0.5 --1.0 -- 1.5 --2.0

Gate-to-Source Voltage, V

10

7

– Ω

5

(on)

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

23 57 23 5

--2.5 --3.0 --3.5

GS

RDS(on) -- I

D

Ta=75°C

25°C

--25°C

Drain Current, ID–A

--0.1

–V

VGS= --4V

No.6564-2/4

IT00288

IT00290