Sanyo 5LP02M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6126

5LP02M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|V

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : XE Continued on next page.

SSD
SSG

D

R
R
R

WP ≤ elcycytud,sµ01 ≤ %165.0–A

PD

D

ID=– V,Am1

SSD)RB(

VSD=– V,V05

SSD

V

SSG

SG

VSD=– I,V01D=– Aµ0014.0–4.1–V

)ffo(SG

=– I,V01D=– Am0771.042.0S

SD

1ID=– V,Am07

)no(SD

2ID=– V,Am04

)no(SD

3ID=– V,Am01

)no(SD

Package Dimensions

unit:mm

2158

[5LP02M]

0.3

0.425

2.1

1.250

0.425

0=05–V

SG

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

=– V41.56.6

SG

=– V5.264.8

SG

=– V5.10102

SG

12

0.65

0.65

2.0

3

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP

sgnitaR

05–V
01±V

41.0–A

51.0W

˚C
˚C

tinU

Ω
Ω
Ω

31000TS (KOTO) TA-1854 No.6126-1/4

5LP02M

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCVSD=– zHM1=f,V0182Fp

ecnaticapaCtuptuOssoCVSD=– zHM1=f,V0111Fp

ecnaticapaCrefsnarTesreveRssrCVSD=– zHM1=f,V015.3Fp

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSD=– V,V01

egrahCecruoS-ot-etaGsgQVSD=– V,V01

egrahC"relliM"niarD-ot-etaGdgQVSD=– V,V01

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

IS=– V,Am041

DS

Switching Time Test Circuit

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS54sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS021sn

=– I,V01D=– Am04189.1Cn

SG

=– I,V01D=– Am04122.0Cn

SG

=– I,V01D=– Am04133.0Cn

SG

0=38.02.1V

SG

sgnitaR

nimpytxam

tinU

--0.14

--0.12

--0.10

–A

D

--0.08

--0.06

--0.04

Drain Current, I

--0.02

0V

--4V
PW=10µs

D.C.≤1%

P.G

V

IN

--4.0V

--3.5V

--6.0V

V

IN

G

50Ω

VDD=--25V

ID=--70mA
RL=357Ω

D

S

I

-- V

D

--3.0V

--2.5V

--2.0V

V

OUT

5LP02M

DS

VGS=--1.5V

--0.30

--0.25

--0.20

–A

D

--0.15

--0.10

Drain Current, I

--0.05

I

D

-- V

GS

Ta=--25

°C

75°C

25°C

VDS=--10V

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

Drain-to-Source Voltage, VDS–V

– Ω

DS(on)

7

40mA

6

4

Static Drain-to-Source

On-State Resistance, R

3

02--1

--25--3

Gate-to-Source Voltage, V

RDS(on) -- V

ID=--70mA

--48--59--610--7 --8 --9 --10

GS

GS

–V

IT00287

Ta=25°C

IT00289

00--0.5 --1.0 --1.5 --2.0

Gate-to-Source Voltage, VGS–V

10

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

2 3 57 2 3 57

--2.5 --3.0 --3.5

RDS(on) -- I

D

Ta=75°C

25°C

--25°C

Drain Current, ID–A

--0.1

IT00288

VGS=--4V

--1.0

IT00290

No.6126-2/4