Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6126
5LP02M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|V
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : XE Continued on next page.
SSD
SSG
D
R
R
R
WP ≤ elcycytud,sµ01 ≤ %165.0–A
PD
D
ID=– V,Am1
SSD)RB(
VSD=– V,V05
SSD
V
SSG
SG
VSD=– I,V01D=– Aµ0014.0–4.1–V
)ffo(SG
=– I,V01D=– Am0771.042.0S
SD
1ID=– V,Am07
)no(SD
2ID=– V,Am04
)no(SD
3ID=– V,Am01
)no(SD
Package Dimensions
unit:mm
2158
[5LP02M]
0.3
0.425
2.1
1.250
0.425
0=05–V
SG
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
=– V41.56.6
SG
=– V5.264.8
SG
=– V5.10102
SG
12
0.65
0.65
2.0
3
0.15
0.3 0.6
0.9
nimpytxam
0.2
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
sgnitaR
05–V
01±V
41.0–A
51.0W
˚C
˚C
tinU
Ω
Ω
Ω
31000TS (KOTO) TA-1854 No.6126-1/4
Page 2
5LP02M
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCVSD=– zHM1=f,V0182Fp
ecnaticapaCtuptuOssoCVSD=– zHM1=f,V0111Fp
ecnaticapaCrefsnarTesreveRssrCVSD=– zHM1=f,V015.3Fp
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSD=– V,V01
egrahCecruoS-ot-etaGsgQVSD=– V,V01
egrahC"relliM"niarD-ot-etaGdgQVSD=– V,V01
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
IS=– V,Am041
DS
Switching Time Test Circuit
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS54sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS021sn
=– I,V01D=– Am04189.1Cn
SG
=– I,V01D=– Am04122.0Cn
SG
=– I,V01D=– Am04133.0Cn
SG
0=38.02.1V
SG
sgnitaR
nimpytxam
tinU
--0.14
--0.12
--0.10
–A
D
--0.08
--0.06
--0.04
Drain Current, I
--0.02
0V
--4V
PW=10µs
D.C.≤1%
P.G
V
IN
--4.0V
--3.5V
--6.0V
V
IN
G
50Ω
VDD=--25V
ID=--70mA
RL=357Ω
D
S
I
-- V
D
--3.0V
--2.5V
--2.0V
V
OUT
5LP02M
DS
VGS=--1.5V
--0.30
--0.25
--0.20
–A
D
--0.15
--0.10
Drain Current, I
--0.05
I
D
-- V
GS
Ta=--25
°C
75°C
25°C
VDS=--10V
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS–V
– Ω
DS(on)
7
40mA
6
4
Static Drain-to-Source
On-State Resistance, R
3
02--1
--25--3
Gate-to-Source Voltage, V
RDS(on) -- V
ID=--70mA
--48--59--610--7 --8 --9 --10
GS
GS
–V
IT00287
Ta=25°C
IT00289
00--0.5 --1.0 --1.5 --2.0
Gate-to-Source Voltage, VGS–V
10
7
– Ω
5
DS(on)
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
2 3 57 2 3 57
--2.5 --3.0 --3.5
RDS(on) -- I
D
Ta=75°C
25°C
--25°C
Drain Current, ID–A
--0.1
IT00288
VGS=--4V
--1.0
IT00290
No.6126-2/4
Page 3
100
7
5
– Ω
3
2
DS(on)
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
RDS(on) -- I
Ta=75°C
--25°C
25°C
D
VGS=--2.5V
5LP02M
100
7
5
– Ω
3
2
DS(on)
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
--25°C
RDS(on) -- I
Ta=75°C
25°C
D
VGS=--1.5V
1.0
--0.01
23 57 23 57
– Ω
8
DS(on)
6
Static Drain-to-Source
On-State Resistance, R
--600--402--2040
--1.0
7
5
3
–A
2
F
--0.1
7
5
Forward Current, I
3
2
--0.01
0
100
7
5
3
2
10
7
5
Ciss, Coss, Crss – pF
3
2
1.0
0
Ciss, Coss, Crss -- V
--5
Drain-to-Source Voltage, VDS–V
Drain Current, ID–A
--0.1
RDS(on) -- Ta
=- -2.5V
GS
=- -40mA, V
I
D
=- -70mA, V
I
D
201040 601280 100 120 140 160
GS
=- -4.0V
Ambient Temperature, Ta – ˚C
I
-- V
F
SD
25°C
Ta=75°C
--25°C
--0.6 --0.8 --1.0 --1.2--0.2 --0.4
Diode Forward Voltage, VSD–V
DS
Ciss
Coss
Crss
--10 --15
--20 --25
IT00291
--1.0
1.0
--0.001
1.0
7
5
fs|–S
y
3
2
23 57 2 3 57
--0.01
Drain Current, ID–A
y
fs -- I
D
VDS=--10V
°C
Ta=--25
75°C
25°C
0.1
7
5
3
2
Forward Transfer Admittance, |
0.01
1000
Switching Time, SW Time – ns
V
GS –
Gate-to-Source Voltage, V
100
--10
--0.01
10
--0.01
--9
--8
--7
--6
--5
--4
--3
--2
--1
7
5
3
2
7
5
3
2
0
IT00293
VGS=0
--1.4
IT00295
f=1MHz
IT00297 IT00298
23 57 23 57
Drain Current, ID–A
23 57 2
--0 .1
SW Time -- I
D
Drain Current, ID–A
VGS -- Qg
VDS=--10V
ID=--140mA
0
0.5
1.0
Total Gate Charge, Qg – nC
VDD=--25V
VGS=--4V
td(off)
t
f
t
r
td(on)
--0 .1
1.5
--0 .1
IT00292
--1.0
IT00294
IT00296
2.0
No.6126-3/4
Page 4
0.20
–W
D
0.15
0.10
0.05
Allowable Power Dissipation, P
5LP02M
P
-- Ta
D
0020 40
60
80 100 120
Ambient Temperature, Ta – ˚C
140 160
IT00299
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6126-4/4
Loading...