Sanyo 5LP01SS Specifications
Ordering number : ENN6622
5LP01SS
P-Channel Silicon MOSFET
5LP01SS
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2179
[5LP01SS]
1.4
0.25
0.45
132
0.2
0.3
0.8
0.3
1.4
0.1
1 : Gate
2 : Source
3 : Drain
Specifications
0.6
SANYO : SSFP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.28 A
--50 V
±10 V
--0.07 A
0.15 W
Electrical Characteristics at T a=25 °C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28 Ω
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--40mA, VGS=--4V 18 23 Ω
RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--40mA 70 100 mS
min typ max
Marking : XB Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91400 TS IM TA-2042
No.6622-1/4
5LP01SS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 160 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.16 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 nC
Diode Forward Voltage V
SD
See specified Test Circuit 35 ns
r
See specified Test Circuit 150 ns
f
IS=--70mA, VGS=0 0.85 1.2 V
min typ max
Switching Time Test Circuit
Ratings
Unit
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
0V
--4V
P.G
V
IN
PW=10µs
D.C.≤1%
I
V
D
IN
-- V
--4.0V
G
50Ω
--6.0V
DS
--3.5V
VDD= --25V
ID= --40mA
RL=625Ω
D
S
--3.0V
--2.5V
--2.0V
VGS= --1.5V
V
OUT
5LP01SS
--0.14
--0.12
--0.10
-- A
D
--0.08
--0.06
--0.04
Drain Current, I
I
D
-- V
GS
Ta= --25°C
75°C
VDS= --10V
25°C
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source V oltage, VDS -- V
(on) -- Ω
30
DS
25
ID=20mA
Static Drain-to-Source
On-State Resistance, R
010--115--220--3
RDS(on) -- V
40mA
--4 --535--640--7 --8 --9 --10
GS
Gate-to-Source V oltage, VGS -- V
IT00090
Ta=25°C
IT00092
--0.02
00--0.5 --1.0 --1.5 --2.0
100
7
5
(on) -- Ω
DS
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
--2.5 --3.0 --4.0--3.5
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
D
IT00091
VGS= --4V
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID -- A
--0.1
IT00093
No.6622-2/4
Loading...