Sanyo 5LP01SP Specifications

Ordering number : ENN6621

5LP01SP

P-Channel Silicon MOSFET

5LP01SP

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2180

[5LP01SP]

4.0

3.0

0.4

0.5

0.4

123

1.3

1.8

0.6

15.0

1.3

2.2

0.4

1 : Source

0.7

0.7

2 : Drain
3 : Gate

Specifications

3.0

3.8nom

SANYO : SPA

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --0.28 A

--50 V
±10 V

--0.07 A

0.25 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V

(BR)DSSID

DSS
GSS

=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

min typ max

Marking : XB Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91400 TS IM TA-1953

No.6621-1/4

5LP01SP

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28 Ω

Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 160 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.16 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 nC
Diode Forward Voltage V

yfs



RDS(on)1 ID=--40mA, VGS=--4V 18 23 Ω

RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Ω

SD

VDS=--10V, ID=--40mA 70 100 mS



See specified Test Circuit 35 ns

r

See specified Test Circuit 150 ns

f

IS=--70mA, VGS=0 0.85 1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

V

IN

G

50Ω

VDD= --25V

ID= --40mA
RL=625Ω

D

S

I

D

--4.0V

V

IN

0V

--4V
PW=10µs

D.C.≤1%

P.G

--0.07

--0.06

--0.05

-- A
D

--0.04

--0.03

--0.02

Drain Current, I

--0.01

V

5LP01SP

-- V

--6.0V

OUT

DS

--3.0V

--3.5V

--2.5V

--2.0V

VGS= --1.5V

--0.14

--0.12

--0.10

-- A
D

--0.08

--0.06

--0.04

Drain Current, I

--0.02

I

D

-- V

GS

Ta= --25°C

75°C

VDS= --10V

25°C

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

Drain-to-Source V oltage, VDS -- V

(on) -- Ω

30

DS

25

ID=20mA

Static Drain-to-Source

On-State Resistance, R

010--115--220--3

RDS(on) -- V

40mA

--4 --535--640--7 --8 --9 --10

GS

Gate-to-Source V oltage, VGS -- V

IT00090

Ta=25°C

IT00092

00--0.5 --1.0 --1.5 --2.0

100

7

5

(on) -- Ω

DS

3

2

Static Drain-to-Source

On-State Resistance, R

10

--0.01

--2.5 --3.0 --4.0--3.5

Gate-to-Source V oltage, VGS -- V

RDS(on) -- I

D

IT00091

VGS= --4V

Ta=75°C

25°C

--25°C

23 57 23

Drain Current, ID -- A

--0.1

IT00093

No.6621-2/4

1000

7
5

3

(on) -- Ω

2

DS

100

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

10

--0.01

(on) -- Ω

30

DS

25

Static Drain-to-Source

On-State Resistance, R

--6010--4015--20200

3

2

--0.1

-- A
F

7

5

3

Forward Current, I

2

--0.01

--0.5

Diode Forward V oltage, VSD -- V

100

7
5

3
2

10

7
5

3
2

1.0
7

Ciss, Coss, Crss -- pF

5
3

2

0.1

0

--10--5

5LP01SP

RDS(on) -- I

Ta=75°C

--25°C

23 57 23

Drain Current, ID -- A

RDS(on) -- Ta

= --20mA, V

I

D

= --40mA, V

I

D

203540 604080 100 120 140 160

Ambient Temperature, Ta -- °C

I

-- V

F

°C

25°C

Ta=75°C

--25

--0.8 --0.9 --1.0 --1.1--0.6 --0.7

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, VDS -- V

--20--15 --30--25

= --2.5V

GS

SD

D

--0.1

= --4.0V

GS

VGS= --2.5V

25°C

IT00094

IT00096 IT00097

VGS=0

--1.2

IT00098

DS

f=1MHz

Ciss

Coss

Crss

--40--35 --50--45

IT00100

100

7

5

(on) -- ΩGate-to-Source V oltage, V

RDS(on) -- I

DS

Ta=75°C

3

25°C

--25°C

2

Static Drain-to-Source

On-State Resistance, R

10

--0.001 --0.01

23 57 23

Drain Current, ID -- A

Ta= --25°C

°C

75

yfs -- I

25°C

1.0
7

5

3
2

0.1
7

5

3
2

Forward Transfer Admittance, yfs -- S

0.01

--0.01

23 57 23

Drain Current, ID -- A

SW Time -- I

t

f

td(off)

23 57

Switching Time, SW Time -- ns

1000

100

10

--0.01

7
5

3
2

7
5

3
2

Drain Current, ID -- A

VGS -- Qg

0.60.4

-- V
GS

--10

VDS= --10V

--9

ID= --70mA

--8

--7

--6

--5

--4

--3

--2

--1
0

0

0.2

Total Gate Charge, Qg -- nC

D

D

t

1.00.8

--0.1

D

r

VGS= --1.5V

IT00095

VDS= --10V

VDD= --25V
V

= --4V

GS

td(on)

IT00099

1.41.2 1.6

IT00101

No.6621-3/4

--0.1

0.30

0.25

-- W
D

0.20

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0 40 120 1608020 100 14060

P

-- Ta

D

Ambient Temperature, Ta -- °C

5LP01SP

IT02382

Note on usage : Since the 5LP01SP is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2000. Specifications and information herein are subject
to change without notice.

PS

No.6621-4/4