Sanyo 5LP01S Specifications

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SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6666

5LP01S

P-Channel Silicon MOSFET

5LP01S

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-Speed Switching.

• 2.5V drive.

Package Dimensions

unit : mm

2124

[5LP01S]

0.75

0.3

0.2

0.5 0.5

1.6

0.6

0.4

0.8

1.6

0.1

0.4

0 to 0.1

0.1max

1 : Gate 2 : Source 3 : Drain

SANYO : SMCP

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

PW≤10µs, duty cycle≤1% --0.28 A

--50 V

±10 V

--0.07 A

0.15 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Sourse Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance

(BR)DSSID

DSS GSS

yfs



=--1mA, VGS=0 --50 V VDS=--50V, VGS=0 10 µA VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--40mA 70 100 mS

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

min typ max

Continued on next page.

D2000 TS IM TA-3075

No.6666-1/4

Unit

Page 2

5LP01S

Continued from preceding page.

Parameter Symbol Conditions

RDS(on)1 ID=--40mA, VGS=--4V 18 23 Ω

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28 Ω

RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Ω Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 160 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.16 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 nC Diode Forward Voltage V

See specified Test Circuit 35 ns

See specified Test Circuit 150 ns

IS=--70mA, VGS=0 --0.85 --1.2 V

Marking : XB

Switching Time Test Circuit

VDD= --25V

ID= --40mA RL=625Ω

OUT

--4V PW=10µs

D.C.≤1%

Ratings

min typ max

Unit

P.G

--0.07

--0.06

--0.05

-- A D

--0.04

--0.03

--0.02

Drain Current, I

--0.01

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

-- V

--4.0V

50Ω

--6.0V

--3.0V

--3.5V

--2.5V

--2.0V

VGS= --1.5V

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

5LP01S

IT00090

Ta=25°C

--0.14

--0.12

--0.10

-- A D

--0.08

--0.06

--0.04

Drain Current, I

--0.02

00--0.5 --1.0 --1.5 --2.0

Gate-to-Source V oltage, VGS -- V

100

-- V

Ta= --25°C

75°C

--2.5 --3.0 --4.0--3.5

RDS(on) -- I

VDS= --10V

25°C

IT00091

VGS= --4V

(on) -- Ω

ID= --20mA

Static Drain-to-Source

On-State Resistance, R

010--115--220--3

--40mA

--4 --535--640--7 --8 --9 --10

Gate-to-Source V oltage, VGS -- V

IT00092

(on) -- Ω

Ta=75°C

Static Drain-to-Source

On-State Resistance, R

--0.01 --0.1

23 57 23

25°C

--25°C

Drain Current, ID -- A

IT00093

No.6666-2/4

Page 3

1000

7 5

(on) -- Ω

100

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

--0.01 --0.1

RDS(on) -- I

Ta=75°C

25°C

--25°C

23 57 23

Drain Current, ID -- A

RDS(on) -- Ta

(on) -- Ω

= --20mA, V

Static Drain-to-Source

On-State Resistance, R

--6010--4015--20200

--0.1

-- A F

Forward Current, I

203540 604080 100 120 140 160

Ambient Temperature, Ta -- °C

25°C

Ta=75°C

= --40mA, V

-- V

--25°C

= --2.5V

= --4.0V

5LP01S

RDS(on) -- I

VGS= --2.5V

100

(on) -- ΩGate-to-Sourse V oltage, V

Ta=75°C

25°C

--25°C

Drain Current, ID -- A

yfs -- I

Ta= --25°C

75°C

IT00094

Static Drain-to-Source

On-State Resistance, R

--0.001 --0.01

1.0 7

3 2

0.1 7

3 2

23 57 23

Forward Transfer Admittance, yfs -- S

0.01

IT00096 IT00097

VGS=0

--0.01 --0.1

1000

7 5

3 2

100

7 5

Switching Time, SW Time -- ns

23 57 23

Drain Current, ID -- A

SW Time -- I

td(off)

25°C

VGS= --1.5V

IT00095

VDS= --10V

VDD= --25V V

= --4V

td(on)

--0.01

--0.5 --0.8 --0.9 --1.0 --1.1--0.6 --0.7 --1.2

Diode Forward V oltage, VSD -- V

Ciss, Coss, Crss -- pF

100

1.0

0.1

Ciss, Coss, Crss -- V

7 5

3 2

7 5

3 2

7 5

3 2

--10--5

--20--15 --30--25

Ciss

Coss

Crss

--40--35 --50--45

Drain-to-Source V oltage, VDS -- V

IT00098

f=1MHz

IT00100

-- V GS

--0.01

--10

VDS= --10V

--9

ID= --70mA

--8

--7

--6

--5

--4

--3

--2

--1 0

23 57

Drain Current, ID -- A

VGS -- Qg

0.2

0.60.4

Total Gate Charge, Qg -- nC

--0.1

IT00099

1.00.8

1.41.2 1.6

IT00101

No.6666-3/4

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0.20

-- W D

0.15

0.10

0.05

Allowable Power Dissipation, P

20 40 60 80

PD -- Ta

100

120 140 160

Ambient Temperature, Ta -- °C

5LP01S

IT02381

Note on usage : Since the 5LP01S is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice.

No.6666-4/4