Sanyo 5LP01S Specifications

Page 1
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6666
5LP01S
P-Channel Silicon MOSFET
5LP01S
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-Speed Switching.
Package Dimensions
unit : mm
2124
[5LP01S]
0.75
0.3
3
2
1
0.2
0.5 0.5
1.6
0.6
0.4
0.8
1.6
0.1
0.4
0 to 0.1
0.1max
1 : Gate 2 : Source 3 : Drain
SANYO : SMCP
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --0.28 A
--50 V
±10 V
--0.07 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Sourse Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --50 V VDS=--50V, VGS=0 10 µA VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--40mA 70 100 mS
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Continued on next page.
D2000 TS IM TA-3075
No.6666-1/4
Unit
Page 2
5LP01S
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=--40mA, VGS=--4V 18 23
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28
RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 160 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.16 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 nC Diode Forward Voltage V
SD
See specified Test Circuit 35 ns
r
See specified Test Circuit 150 ns
f
IS=--70mA, VGS=0 --0.85 --1.2 V
Marking : XB
Switching Time Test Circuit
V
IN
VDD= --25V
ID= --40mA RL=625
D
V
OUT
V
0V
--4V PW=10µs
D.C.1%
IN
Ratings
min typ max
Unit
G
P.G
--0.07
--0.06
--0.05
-- A D
--0.04
--0.03
--0.02
Drain Current, I
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
I
D
-- V
--4.0V
50
--6.0V
DS
--3.0V
--3.5V
S
--2.5V
--2.0V
VGS= --1.5V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
5LP01S
IT00090
Ta=25°C
--0.14
--0.12
--0.10
-- A D
--0.08
--0.06
--0.04
Drain Current, I
--0.02
00--0.5 --1.0 --1.5 --2.0
Gate-to-Source V oltage, VGS -- V
100
7
I
-- V
D
GS
Ta= --25°C
75°C
--2.5 --3.0 --4.0--3.5
RDS(on) -- I
VDS= --10V
25°C
IT00091
D
VGS= --4V
(on) --
30
DS
25
ID= --20mA
Static Drain-to-Source
On-State Resistance, R
010--115--220--3
--40mA
--4 --535--640--7 --8 --9 --10
Gate-to-Source V oltage, VGS -- V
IT00092
5
(on) --
DS
3
Ta=75°C
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01 --0.1
23 57 23
25°C
--25°C
Drain Current, ID -- A
IT00093
No.6666-2/4
Page 3
1000
7 5
3
(on) --
2
DS
100
7 5
3 2
Static Drain-to-Source
On-State Resistance, R
10
--0.01 --0.1
RDS(on) -- I
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID -- A
RDS(on) -- Ta
(on) --
30
DS
25
= --20mA, V
I
D
I
D
Static Drain-to-Source
On-State Resistance, R
--6010--4015--20200
3
2
--0.1
-- A F
7
5
3
Forward Current, I
2
203540 604080 100 120 140 160
Ambient Temperature, Ta -- °C
I
F
25°C
Ta=75°C
GS
= --40mA, V
-- V
SD
--25°C
D
= --2.5V
= --4.0V
GS
5LP01S
RDS(on) -- I
VGS= --2.5V
100
7
5
(on) -- Gate-to-Sourse V oltage, V
DS
Ta=75°C
25°C
--25°C
Drain Current, ID -- A
yfs -- I
Ta= --25°C
75°C
IT00094
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.001 --0.01
1.0 7
5
3 2
0.1 7
5
3 2
23 57 23
Forward Transfer Admittance, yfs -- S
0.01
IT00096 IT00097
VGS=0
--0.01 --0.1
1000
7 5
3 2
100
7 5
3
Switching Time, SW Time -- ns
2
23 57 23
Drain Current, ID -- A
SW Time -- I
t
f
td(off)
25°C
D
D
D
t
r
VGS= --1.5V
IT00095
VDS= --10V
VDD= --25V V
= --4V
GS
td(on)
--0.01
--0.5 --0.8 --0.9 --1.0 --1.1--0.6 --0.7 --1.2
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- pF
100
1.0
0.1
Ciss, Coss, Crss -- V
7 5
3 2
10
7 5
3 2
7 5
3 2
0
--10--5
--20--15 --30--25
DS
Ciss
Coss
Crss
--40--35 --50--45
Drain-to-Source V oltage, VDS -- V
IT00098
f=1MHz
IT00100
-- V GS
10
--0.01
--10
VDS= --10V
--9
ID= --70mA
--8
--7
--6
--5
--4
--3
--2
--1 0
0
23 57
Drain Current, ID -- A
VGS -- Qg
0.2
0.60.4
Total Gate Charge, Qg -- nC
--0.1
IT00099
1.00.8
1.41.2 1.6
IT00101
No.6666-3/4
Page 4
0.20
-- W D
0.15
0.10
0.05
Allowable Power Dissipation, P
0
20 40 60 80
0
PD -- Ta
100
120 140 160
Ambient Temperature, Ta -- °C
5LP01S
IT02381
Note on usage : Since the 5LP01S is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice.
No.6666-4/4
PS
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