Sanyo 5LP01N Specifications
Ordering number : ENN6620
5LP01N
P-Channel Silicon MOSFET
5LP01N
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Specifications
Package Dimensions
unit : mm
2178
[5LP01N]
5.0
4.0
5.0
0.45
0.5
2.0
0.45
123
1.3
0.6
14.0
1.3
4.0
0.44
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.28 A
--50 V
±10 V
--0.07 A
0.4 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Marking : XB Continued on next page.
(BR)DSSID
DSS
GSS
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91400 TS IM TA-1954
No.6620-1/4
5LP01N
Continued from preceding page.
Parameter Symbol Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28 Ω
Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 160 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.16 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 nC
Diode Forward Voltage V
yfs
RDS(on)1 ID=--40mA, VGS=--4V 18 23 Ω
RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Ω
SD
VDS=--10V, ID=--40mA 70 100 mS
See specified Test Circuit 35 ns
r
See specified Test Circuit 150 ns
f
IS=--70mA, VGS=0 0.85 1.2 V
min typ max
Switching Time Test Circuit
V
IN
VDD= --25V
ID= --40mA
RL=625Ω
D
V
OUT
0V
--4V
PW=10µs
D.C.≤1%
V
IN
Ratings
Unit
G
I
D
S
-- V
--4.0V
5LP01N
--6.0V
DS
--3.0V
--3.5V
--2.5V
--2.0V
VGS= --1.5V
P.G
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
50Ω
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
IT00090
Ta=25°C
--0.14
--0.12
--0.10
-- A
D
--0.08
--0.06
--0.04
Drain Current, I
--0.02
00--0.5 --1.0 --1.5 --2.0
Gate-to-Source V oltage, VGS -- V
100
7
I
-- V
D
GS
Ta= --25°C
75°C
--2.5 --3.0 --4.0--3.5
RDS(on) -- I
VDS= --10V
25°C
IT00091
D
VGS= --4V
(on) -- Ω
30
DS
25
ID=20mA
Static Drain-to-Source
On-State Resistance, R
010--115--220--3
40mA
--4 --535--640--7 --8 --9 --10
Gate-to-Source V oltage, VGS -- V
IT00092
5
(on) -- Ω
DS
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID -- A
--0.1
IT00093
No.6620-2/4
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