Sanyo 5LP01M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6135

5LP01M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : XB Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %182.0–A

PD

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01–=

1)no(IDV,Am04–=

2)no(IDV,Am02–=

3)no(IDV,Am5–=

Package Dimensions

unit:mm

2158

[5LP01M]

0.3

0.425

2.1

1.250

0.425

V,Am1–=

0=05–V

SG

V,V05–=

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

Aµ001–=4.0–4.1–V

D

Am04–=07001Sm

D

V4–=8132

SG

V5.2–=0282

SG

V5.1–=0306

SG

12

0.65

0.65

2.0

3

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP3

05–V
01±V

70.0–A

51.0W

sgnitaR

˚C
˚C

tinU

Ω
Ω
Ω

31000TS (KOTO) TA-2040 No.6135-1/4

5LP01M

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

zHM1=f,V01–=4.7Fp
zHM1=f,V01–=2.4Fp
zHM1=f,V01–=3.1Fp

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS061sn
tiucriCtseTdeificepseeS051sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

V,Am07–=

0=58.0–2.1–V

SG

nimpytxam

Am07–=04.1Cn

D

Am07–=61.0Cn

D

Am07–=32.0Cn

D

sgnitaR

tinU

--0.07

--0.06

--0.05

–A

D

--0.04

--0.03

--0.02

Drain Current, I

0V

--4V
PW=10µs

D.C.≤1%

P.G

V

IN

G

50Ω

VDD=--25V

D

S

I

-- V

D

--6.0V

--4.0V

ID=--40mA
RL=625Ω

V

OUT

5LP01M

DS

--3.0V

--3.5V

--2.0V

--2.5V

VGS=--1.5V

--0.14

--0.12

--0.10

–A

D

--0.08

--0.06

--0.04

Drain Current, I

I

D

-- V

GS

Ta=--25

°C

VDS=--10V

25°C

75°C

V

IN

--0.01

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

– Ω

30

(on)

DS

25

ID=20mA

Static Drain-to-Source

On-State Resistance, R

010--115--220--3

40mA

Gate-to-Source Voltage, V

--4 --535--640--7 --8 --9 --10

GS

–V

IT00090

Ta=25°C

IT00092

--0.02

00--0.5 --1.0 --1.5 --2.0

Gate-to-Source Voltage, VGS–V

5

– Ω

3

(on)

DS

2

Static Drain-to-Source

On-State Resistance, R

10

--0.01

23 57 23

--2.5 --3.0 --4.0--3 .5

RDS(on) -- I

D

Ta=75°C

25°C

--25°C

Drain Current, ID–A

--0 .1

IT00091

VGS=--4V

IT00093

No.6135-2/4