Sanyo 5LP01M Specifications

Ordering number:ENN6135

P-Channel Silicon MOSFET

5LP01M

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

	· Low ON resistance.	unit:mm
	· Ultrahigh-speed switching.	2158
	· 2.5V drive.

	0.425
2.1	1.250
	0.425

Specifications

Absolute Maximum Ratings at Ta = 25˚C

[5LP01M]

0.3	0.15	0.2
	3

0 to 0.1

	1	2	0.3	0.6
	0.65	0.65
				0.9
	2.0

1 : Gate

2 : Source

3 : Drain

SANYO : MCP3

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		–50	V
Gate-to-Source Voltage	VGSS		±10	V
Drain Current (DC)	ID		–0.07	A
Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%	–0.28	A
Allowable Power Dissipation	PD		0.15	W
Channel Temperature	Tch		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=–1mA, VGS=0	–50			V
Zero-Gate Voltage Drain Current	IDSS	VDS=–50V, VGS=0			–10	µA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0			±10	µA
Cutoff Voltage	VGS(off)	VDS=–10V, ID=–100µA	–0.4		–1.4	V
Forward Transfer Admittance	| yfs |	VDS=–10V, ID=–40mA	70	100		mS
	RDS(on)1	ID=–40mA, VGS=–4V		18	23	Ω
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=–20mA, VGS=–2.5V		20	28	Ω
	RDS(on)3	ID=–5mA, VGS=–1.5V		30	60	Ω
Marking : XB				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31000TS (KOTO) TA-2040 No.6135-1/4

5LP01M

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=–10V, f=1MHz		7.4		pF
Output Capacitance	Coss	VDS=–10V, f=1MHz		4.2		pF
Reverse Transfer Capacitance	Crss	VDS=–10V, f=1MHz		1.3		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		20		ns
Rise Time	tr	See specified Test Circuit		35		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		160		ns
Fall Time	tf	See specified Test Circuit		150		ns
Total Gate Charge	Qg	VDS=–10V, VGS=–10V, ID=–70mA		1.40		nC
Gate-to-Source Charge	Qgs	VDS=–10V, VGS=–10V, ID=–70mA		0.16		nC
Gate-to-Drain "Miller" Charge	Qgd	VDS=–10V, VGS=–10V, ID=–70mA		0.23		nC
Diode Forward Voltage	VSD	IS=–70mA, VGS=0		–0.85	–1.2	V

Switching Time Test Circuit

	VIN	VDD=--25V
	0V
	--4V	VIN	ID=--40mA
	PW=10µs		RL=625Ω
		D	VOUT
	D.C.≤ 1%
		G
			5LP01M
	P.G	50Ω
		S

	--0.07	ID -- VDS
								0V
						6	.				.0V		.5V
					--						3
													2
	--0.06										--
				0V								--
			.								.5V
A		--	4							3
	--0.05								--
–
										.0V
D									2
									--
I	--0.04
Current,
	--0.03
Drain	--0.02													VGS=--1.5V
	--0.01
	0
	0	--0.2 --0.4 --0.6 --0.8 --1.0							--1.2 --1.4 --1.6 --1.8 --2.0
		Drain-to-Source Voltage, VDS –												V	IT00090

	40			RDS(on) -- VGS
														Ta=25°C
Ω	35
–
(on)	30
DS
Source-to-DrainStatic Resistance,State-OnR	25
		ID=20mA
				40mA
	20
	15
	10
	0 --1 --2			--3 --4 --5 --6 --7							--8		--9 --10
		Gate-to-Source Voltage, VGS –									V			IT00092

	--0.14								ID -- VGS
																	C								V		DS=--10V
																°
	--0.12															25
																--							C
															Ta=
A																						°
–	--0.10																					25
																			C
D
I																°
Current,	--0.08															75
	--0.06
Drain	--0.04
	--0.02
		0
		0		--0.5 --1.0				--1.5			--2.0								--2.5			--3.0				--3.5			--4.0
					Gate-to-Source Voltage, VGS – V																							IT00091
		5						RDS(on)								--				ID
																										VGS=--4V
Ω
	–
	(on)	3
	DS
											Ta=75°C
Source-to-DrainStatic	Resistance,State-On R
		2
													25°C
												--25°C
		10
		--0.01		2				3			5					7			--0.1							2			3
								Drain Current, ID –														A						IT00093

No.6135-2/4