Sanyo 5LP01C Specifications

Ordering number : ENN6619

5LP01C

P-Channel Silicon MOSFET

5LP01C

Ultrahigh-Speed Switching Applications

Features		Package Dimensions
•	Low ON-resistance.	unit : mm
•	Ultrahigh-Speed Switching.	2091A

•	2.5V drive.					[5LP01C]
		0.4			0.5	0.16
		3
						0 to 0.1
					1.5	2.5
	1	0.95	0.95	2	0.5
		1.9
		2.9

0.8

1.1

Specifications

Absolute Maximum Ratings at Ta=25°C

1 : Gate

2 : Source

3 : Drain

SANYO : CP

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS						--50	V
Gate-to-Source Voltage	VGSS						±10	V
Drain Current (DC)	ID						--0.07	A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--0.28	A
Allowable Power Dissipation	PD						0.25	W
Channel Temperature	Tch						150	°C
Storage Temperature	Tstg				--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--50					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--50V, VGS=0					10	mA
Gate-to-Sourse Leakage Current	IGSS	VGS=±8V, VDS=0					±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--100mA	--0.4				--1.4	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--40mA	70		100			mS
	RDS(on)1	ID=--40mA, VGS=--4V			18		23	W
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=--20mA, VGS=--2.5V			20		28	W
	RDS(on)3	ID=--5mA, VGS=--1.5V			30		60	W
Marking : XB					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92500 TS IM TA-2036 No.6619-1/4

5LP01C

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=--10V, f=1MHz		7.4		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz		4.2		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz		1.3		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		20		ns
Rise Time	tr	See specified Test Circuit		35		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		160		ns
Fall Time	tf	See specified Test Circuit		150		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--70mA		1.40		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--70mA		0.16		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--70mA		0.23		nC
Diode Forward Voltage	VSD	IS=--70mA, VGS=0		0.85	1.2	V

Switching Time Test Circuit

VDD= --25V

VIN

		0V														ID= --40mA
		--4V
																RL=625Ω
				VIN										D			VOUT
		PW=10µs
		D.C.≤ 1%
									G
																	5LP01C
		P.G					50Ω
														S
	--0.07		ID -- VDS
									0V
							6	.					.0V			.5V
						--						3
															2
												--
	--0.06				0V									--
				.												.0V
												.5V				--2
			--	4							3
A	--0.05									--
--
D
I	--0.04
Drain Current,
	--0.03
	--0.02															VGS= --1.5V
	--0.01
	0
	0	--0.2 --0.4 --0.6	--0.8			--1.0				--1.2 --1.4 --1.6 --1.8 --2.0
		Drain-to-Source Voltage, VDS														-- V	IT00090

	40			RDS(on) -- VGS
														Ta=25°C
Ω	35
--
(on)
DS	30
Source-to-DrainStatic Resistance,State-On R	25
		ID=20mA
				40mA
	20
	15
	10
	0 --1 --2			--3 --4 --5 --6 --7							--8		--9 --10
		Gate-to-Source Voltage, VGS									-- V			IT00092

Drain Current, ID -- A

On-State Resistance, RDS(on) -- Ω

Static Drain-to-Source

--0.14										ID -- VGS
																			C				VDS= --10V
																		°
--0.12																		25
																	Ta=	--			C
																				°
--0.10																				25
																			C
--0.08																		°
																		75
--0.06
--0.04
--0.02
0
0		--0.5 --1.0				--1.5							--2.0					--2.5				--3.0			--3.5		--4.0
			Gate-to-Source Voltage, VGS																			-- V				IT00091
100							RDS(on)											--		ID
																								V	GS= --4V
7
5
3
								Ta=75°C
2										25°C
									--25°C
10
--0.01		2				3							5					7		--0.1					2		3
						Drain Current, ID														-- A						IT00093

No.6619-2/4