Sanyo 5LN02M Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6130
5LN02M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : YE Continued on next page.
SSD
SSG
D
R
R
R
WP ≤ elcycytud,sµ01 ≤ %18.0A
PD
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1I
)no(SD
2I
)no(SD
3I
)no(SD
SD
V
SG
V
SD
D
D
D
Package Dimensions
unit:mm
2158
[5LN02M]
0.3
0.425
2.1
1.250
0.425
V,Am1=
0=05V
SG
V,V05=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Aµ001=4.03.1V
D
Am001=43.094.0S
D
V,Am001=
V4=9.14.2
SG
V,Am05=
V5.2=2.23
SG
V,Am01=
V5.1=2.34.6
SG
3
12
0.65
0.65
2.0
0.15
0.3 0.6
0.9
nimpytxam
0.2
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
05V
01±V
2.0A
51.0W
sgnitaR
˚C
˚C
tinU
Ω
Ω
Ω
D1099TS (KOTO) TA-1851 No.6130-1/4
5LN02M
Continued from preceding page.
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ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
4V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
VDD=25V
D
S
ID=100mA
RL=250Ω
V
OUT
5LN02M
V
IN
G
50Ω
zHM1=f,V01=52Fp
zHM1=f,V01=21Fp
zHM1=f,V01=5.4Fp
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS57sn
tiucriCtseTdeificepseeS053sn
tiucriCtseTdeificepseeS071sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am002=
D
0=38.02.1V
SG
sgnitaR
nimpytxam
Am002=81.2Cn
Am002=82.0Cn
Am002=54.0Cn
tinU
0.20
0.18
0.16
0.14
–A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
– Ω
DS(on)
0
5
4
3
2
0
50mA
I
-- V
D
3.5V
4.0V
DS
3.0V
2.5V
6.0V
2.0V
0.2
Drain-to-Source Voltage, VDS–V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
RDS(on) -- V
GS
ID=100mA
VGS=1.5V
IT00274
Ta=25°C
I
-- V
D
0.40
0.35
0.30
–A
0.25
D
0.20
0.15
Drain Current, I
0.10
0.05
0
0 0.5 1.0 1.5 2.0 2.5
GS
°C
Ta=--25
75°C
25°C
Gate-to-Source Voltage, VGS–V
– Ω
DS(on)
10
7
5
3
RDS(on) -- I
D
Ta=75°C
2
25°C
VDS=10V
IT00275
VGS=4V
1
Static Drain-to-Source
On-State Resistance, R
0
01263456
Gate-to-Source Voltage, V
78910
–V
GS
IT00276
Static Drain-to-Source
On-State Resistance, R
1.0
0.01
23 57 23 57
--25°C
Drain Current, ID–A
0.1
1.0
IT00277
No.6130-2/4
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