Sanyo 5LN02M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6130

5LN02M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : YE Continued on next page.

SSD
SSG

D

R
R
R

WP ≤ elcycytud,sµ01 ≤ %18.0A

PD

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1I

)no(SD

2I

)no(SD

3I

)no(SD

SD

V

SG

V

SD

D
D
D

Package Dimensions

unit:mm

2158

[5LN02M]

0.3

0.425

2.1

1.250

0.425

V,Am1=

0=05V

SG

V,V05=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Aµ001=4.03.1V

D

Am001=43.094.0S

D
V,Am001=

V4=9.14.2

SG

V,Am05=

V5.2=2.23

SG

V,Am01=

V5.1=2.34.6

SG

3

12

0.65

0.65

2.0

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP3

05V
01±V

2.0A

51.0W

sgnitaR

˚C
˚C

tinU

Ω
Ω
Ω

D1099TS (KOTO) TA-1851 No.6130-1/4

5LN02M

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

4V
0V

PW=10µs
D.C.≤1%

P.G

V

IN

VDD=25V

D

S

ID=100mA
RL=250Ω

V

OUT

5LN02M

V

IN

G

50Ω

zHM1=f,V01=52Fp
zHM1=f,V01=21Fp
zHM1=f,V01=5.4Fp

tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS57sn
tiucriCtseTdeificepseeS053sn
tiucriCtseTdeificepseeS071sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am002=

D

0=38.02.1V

SG

sgnitaR

nimpytxam

Am002=81.2Cn
Am002=82.0Cn
Am002=54.0Cn

tinU

0.20

0.18

0.16

0.14

–A

D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02

– Ω

DS(on)

0

5

4

3

2

0

50mA

I

-- V

D

3.5V

4.0V

DS

3.0V

2.5V

6.0V

2.0V

0.2

Drain-to-Source Voltage, VDS–V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

RDS(on) -- V

GS

ID=100mA

VGS=1.5V

IT00274

Ta=25°C

I

-- V

D

0.40

0.35

0.30

–A

0.25

D

0.20

0.15

Drain Current, I

0.10

0.05

0

0 0.5 1.0 1.5 2.0 2.5

GS

°C

Ta=--25

75°C

25°C

Gate-to-Source Voltage, VGS–V

– Ω

DS(on)

10

7

5

3

RDS(on) -- I

D

Ta=75°C

2

25°C

VDS=10V

IT00275

VGS=4V

1

Static Drain-to-Source

On-State Resistance, R

0

01263456

Gate-to-Source Voltage, V

78910

–V

GS

IT00276

Static Drain-to-Source

On-State Resistance, R

1.0

0.01

23 57 23 57

--25°C

Drain Current, ID–A

0.1

1.0

IT00277

No.6130-2/4

5LN02M

10

RDS(on) -- I

D

VGS=2.5V

10

RDS(on) -- I

D

VGS=1.5V

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

– Ω

DS(on)

1.0

0.01

4.0

3.5

3.0

2.5

2.0

1.5

1.0

23 57 23 57

Ta=75°C

25°C

--25°C

Drain Current, ID–A

0.1

RDS(on) -- Ta

=2.5V

GS

=50mA, V

I

D

I

D

=100mA, V

GS

=4.0V

IT00278

1.0

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.001

1.0

7

fs|–S

y

5

3

2

23 57 23 57

VDS=10V

Ta=75°C

25°C

--25°C

Drain Current, ID–A

0.01

yfs -- I

Ta=--25°C

D

°C

25

75°C

0.1

IT00279

0.5

Static Drain-to-Source

ON-State Resistance, R

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

I

-- V

F

°C

Ta=75

25°C

Ciss

SD

°C

--25

1.0
7
5

3

–A

F

2

0.1
7

5

Forward Current, I

3
2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

100

7
5

3
2

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

Coss

7
5

Ciss,Coss,Crss – pF

3
2

1.0
0

51010 15

Crss

20 5025 30 35 40 45

Drain-to-Source Voltage, VDS–V

DS

IT00280

V

= 0

GS

IT00282

f=1MHz

IT00284

Forward Transfer Admittance, |

0.1

1000

100

Switching Time, SW Time – ns

V
–

GS

Gate-to-Source Voltage, V

0.01

7
5

3
2

7
5

3
2

10

0.01

10

VDS=10V

9

ID=200mA

8

7

6

5

4
3

2

1
0

0

23 57 23 57

Drain Current, ID–AAmbient Temperature, Ta – ˚C

0.1

SW Time -- I

IT00281

D

VDD=25V
VGS=4V

td(off)

t

f

t

r

td(on)

23 57 23

Drain Current, ID–A

0.1

IT00283

VGS -- Qg

Total Gate Charge, Qg – nC

IT00285

No.6130-3/4

1.0

2.51.5 2.00.5 1.0

0.20

–W

D

0.15

0.10

0.05

Allowable Power Dissipation, P

5LN02M

P

-- Ta

D

0020 40

60

Ambient Temperature, Ta – ˚C

80 100 120

140 160

IT00286

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.

PS No.6130-4/4