Sanyo 5LN02C Specifications

Ordering number : ENN6415

5LN02C

N-Channel Silicon MOSFET

5LN02C

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2091A

[5LN02C]

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

1.5

0.5

0.16

0 to 0.1

2.5

1 : Gate
2 : Source
3 : Drain

1.1

Specifications

0.8

SANYO : CP

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Sourse Voltage V
Drain Current(DC) I
Drain Current(Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg -55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 0.8 A

50 V

±10 V

0.2 A

0.25 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Souese Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=50mA, VGS=2.5V 2.2 3 Ω

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=100mA, VGS=4V 1.9 2.4 Ω

RDS(on)3 ID=10mA, VGS=1.5V 3.2 6.4 Ω

=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V , ID=100mA 0.34 0.49 S

min typ max

Marking : YE Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2772

No.6415-1/4

5LN02C

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 25 pF
Output Capacitance Coss VDS=10V , f=1MHz 12 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 350 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 2.18 nC
Gate-to-Sourse Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC
Diode Forward Voltage V

SD

See specified Test Circuit 75 ns

r

See specified Test Circuit 170 ns

f

IS=200mA, VGS=0 0.83 1.2 V

min typ max

Switching Time Test Circuit

4V
0V

PW=10µs
D.C.≤1%

P.G

V

IN

VDD=25V

D

S

ID=100mA
RL=250Ω

V

OUT

5LN02C

V

IN

G

50Ω

Ratings

Unit

0.20

0.18

0.16

0.14

-- A
D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02

0

0

5

(on) --

4

DS

3

ID=50mA

2

ID -- V

DS

3.5V

4.0V

3.0V

2.5V

2.0V

6.0V

0.2

0.4

0.6

Drain-to-Source Voltage, VDS -- V

RDS(on) -- V

GS

100mA

ID -- V

0.40

=1.5V

V

GS

0.8 1.00.1 0.3 0.5 0.7 0.9

IT00274 IT00275

Ta=25°C

0.35

0.30

-- A

0.25

D

0.20

0.15

Drain Current, I

0.10

0.05

0

0 0.5 1.0 1.5 2.0 2.5

Gate-to-Source Voltage, VGS -- V

10

7

5

(on) --

RDS(on) -- I

GS

Ta=75°C

--25°C

25°C

D

DS

3

Ta=75°C

2

25°C

VDS=10V

VGS=4V

1

Static Drain-to-Source

On-State Resistance, R

0

1263456

0

Gate-to-Source Voltage, VGS -- V

7

Static Drain-to-Source

On-State Resistance, R

8910

IT00276 IT00277

1.0

0.01

357 2357

2

Drain Current, ID -- A

--25°C

0.1

1.0

No.6415-2/4