Ordering number : ENN6415
5LN02C
N-Channel Silicon MOSFET
5LN02C
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2091A
[5LN02C]
0.4
3
0.95
0.95
1
2
1.9
2.9
0.5
1.5
0.5
0.16
0 to 0.1
2.5
1 : Gate
2 : Source
3 : Drain
1.1
Specifications
0.8
SANYO : CP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Sourse Voltage V
Drain Current(DC) I
Drain Current(Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg -55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 0.8 A
50 V
±10 V
0.2 A
0.25 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Souese Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=50mA, VGS=2.5V 2.2 3 Ω
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=100mA, VGS=4V 1.9 2.4 Ω
RDS(on)3 ID=10mA, VGS=1.5V 3.2 6.4 Ω
=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=100mA 0.34 0.49 S
min typ max
Marking : YE Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2772
No.6415-1/4
5LN02C
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 25 pF
Output Capacitance Coss VDS=10V , f=1MHz 12 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 350 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 2.18 nC
Gate-to-Sourse Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC
Diode Forward Voltage V
SD
See specified Test Circuit 75 ns
r
See specified Test Circuit 170 ns
f
IS=200mA, VGS=0 0.83 1.2 V
min typ max
Switching Time Test Circuit
4V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
VDD=25V
D
S
ID=100mA
RL=250Ω
V
OUT
5LN02C
V
IN
G
50Ω
Ratings
Unit
0.20
0.18
0.16
0.14
-- A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0
5
(on) --
4
DS
3
ID=50mA
2
ID -- V
DS
3.5V
4.0V
3.0V
2.5V
2.0V
6.0V
0.2
0.4
0.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- V
GS
100mA
ID -- V
0.40
=1.5V
V
GS
0.8 1.00.1 0.3 0.5 0.7 0.9
IT00274 IT00275
Ta=25°C
0.35
0.30
-- A
0.25
D
0.20
0.15
Drain Current, I
0.10
0.05
0
0 0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS -- V
10
7
5
(on) --
RDS(on) -- I
GS
Ta=75°C
--25°C
25°C
D
DS
3
Ta=75°C
2
25°C
VDS=10V
VGS=4V
1
Static Drain-to-Source
On-State Resistance, R
0
1263456
0
Gate-to-Source Voltage, VGS -- V
7
Static Drain-to-Source
On-State Resistance, R
8910
IT00276 IT00277
1.0
0.01
357 2357
2
Drain Current, ID -- A
--25°C
0.1
1.0
No.6415-2/4
5LN02C
10
7
5
(on) -- Ω
DS
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01 0.1
4.5
4.0
3.5
(on) -- Ω
3.0
DS
2.5
2.0
1.5
1.0
Static Drain-to-Source
On-State Resistance, R
0.5
0
--60
23 57 23 5
--40 --20
0
Ambient Temperature, Ta -- °C
1.0
7
5
3
-- A
F
2
RDS(on) -- I
D
VGS=2.5V
Ta=75°C
25°C
--25°C
Drain Current, ID -- A
IT00278 IT00279
RDS(on) -- Ta
=2.5V
GS
SD
GS
=4.0V
IT00280 IT00281
V
GS
=50mA, V
I
D
=100mA, V
I
D
20 40 60 80 100 120 140 160
I
-- V
F
= 0
10
7
(on) -- Ω
5
DS
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.001 0.01
23 57 23 5
Drain Current, ID -- A
1.0
7
5
3
2
Ta=--25°C
Forward Transfer Admittance, yfs -- S
0.1
0.01
23 57 23 57
Drain Current, ID -- A
1000
7
5
3
2
RDS(on) -- I
Ta=75°C
25°C
--25°C
yfs -- I
D
25°C
75°C
0.1
SW Time -- I
t
(off)
d
t
f
D
VGS=1.5V
VDS=10V
1.0
D
VDD=25V
VGS=4V
0.1
7
5
3
Forward Drain Current, I
2
0.01
0 0.2
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- V
5
10 15
Ciss, Coss, Crss -- pF
100
1.0
7
5
3
2
10
7
5
3
2
0
25°C
Ta=75°C
0.4 0.6 0.8 1.0 1.2 1.4
--25°C
DS
Ciss
Coss
Crss
Drain-to-Source V oltage, VSD -- V
20 5025 30 35 40 45
100
7
5
3
Switching Time, SW Time -- ns
2
10
IT00282 IT00283
f=1MHz
IT00284 IT00285
0.01 0.1
10
VDS=10V
9
ID=200mA
8
-- V
7
GS
6
5
4
3
2
Gate-to-Source V oltage, V
1
0
0
23 57 23
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
t
r
td(on)
VGS -- Qg
No.6415-3/4
2.51.5 2.00.5 1.0
0.30
0.25
-- W
D
0.20
0.15
0.10
0.05
Allowable Power Dissipation, P
5LN02C
P
-- Ta
D
0020
40
60
80
100 120
Ambient Temperature, Ta -- °C
140 160
IT00767
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
No.6415-4/4
PS
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