Sanyo 5LN02C Specifications

Ordering number : ENN6415
5LN02C
N-Channel Silicon MOSFET
5LN02C
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2091A
[5LN02C]
0.4
3
0.95
0.95
1
2
1.9
2.9
0.5
1.5
0.5
0.16
0 to 0.1
2.5
1 : Gate 2 : Source 3 : Drain
1.1
Specifications
0.8
SANYO : CP
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Sourse Voltage V Drain Current(DC) I Drain Current(Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 ° C Storage T emperature Tstg -55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 0.8 A
50 V
±10 V
0.2 A
0.25 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Souese Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=50mA, VGS=2.5V 2.2 3
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=100mA, VGS=4V 1.9 2.4
RDS(on)3 ID=10mA, VGS=1.5V 3.2 6.4
=1mA, VGS=0 50 V VDS=50V , VGS=0 10 µA VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=100mA 0.34 0.49 S
min typ max
Marking : YE Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2772
No.6415-1/4
5LN02C
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 25 pF Output Capacitance Coss VDS=10V , f=1MHz 12 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.5 pF Turn-ON Delay Time td(on) See specified Test Circuit 25 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 350 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 2.18 nC Gate-to-Sourse Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC Diode Forward Voltage V
SD
See specified Test Circuit 75 ns
r
See specified Test Circuit 170 ns
f
IS=200mA, VGS=0 0.83 1.2 V
min typ max
Switching Time Test Circuit
4V 0V
PW=10µs D.C.1%
P.G
V
IN
VDD=25V
D
S
ID=100mA RL=250
V
OUT
5LN02C
V
IN
G
50
Ratings
Unit
0.20
0.18
0.16
0.14
-- A D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0
5
(on) --
4
DS
3
ID=50mA
2
ID -- V
DS
3.5V
4.0V
3.0V
2.5V
2.0V
6.0V
0.2
0.4
0.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- V
GS
100mA
ID -- V
0.40
=1.5V
V
GS
0.8 1.00.1 0.3 0.5 0.7 0.9
IT00274 IT00275
Ta=25°C
0.35
0.30
-- A
0.25
D
0.20
0.15
Drain Current, I
0.10
0.05
0
0 0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS -- V
10
7
5
(on) --
RDS(on) -- I
GS
Ta=75°C
--25°C
25°C
D
DS
3
Ta=75°C
2
25°C
VDS=10V
VGS=4V
1
Static Drain-to-Source
On-State Resistance, R
0
1263456
0
Gate-to-Source Voltage, VGS -- V
7
Static Drain-to-Source
On-State Resistance, R
8910
IT00276 IT00277
1.0
0.01
357 2357
2
Drain Current, ID -- A
--25°C
0.1
1.0
No.6415-2/4
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