Sanyo 5LN01S Specifications

Ordering number:ENN6561

N-Channel Silicon MOSFET

5LN01S

Ultrahigh-Speed Switching Applications

	Features	Package Dimensions
	· Low ON-resistance.	unit:mm
	· Ultrahigh-speed switching.	2124
	· 2.5V drive.

		[5LN01S]
		0.4	0.75
0.3			0.6
3			0 to 0.1
		0.8
			1.6
0.2 1	2	0.4	0.1
0.5 0.5			0.1max
	1.6
			1 : Gate
			2 : Source
			3 : Drain

Specifications						SANYO : SMCP
Absolute Maximum Ratings at Ta = 25˚C
Parameter	Symbol		Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS							50	V
Gate-to-Source Voltage	VGSS							±10	V
Drain Current (DC)	ID							0.1	A
Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%						0.4	A
Allowable Power Dissipation	PD							0.15	W
Channel Temperature	Tch							150	˚C
Storage Temperature	Tstg					–55 to +150			˚C
Electrical Characteristics at Ta = 25˚C
Parameter	Symbol		Conditions			Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		50					V
Zero-Gate Voltage Drain Current	IDSS	VDS=50V, VGS=0						10	µA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0						±10	µA
Cutoff Voltage	VGS(off)	VDS=10V, ID=100µA		0.4				1.3	V
Forward Transfer Admittance	| yfs |	VDS=10V, ID=50mA		0.13		0.18			S
	RDS(on)1	ID=50mA, VGS=4V				6		7.8	Ω
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=30mA, VGS=2.5V				7.1		9.9	Ω
	RDS(on)3	ID=10mA, VGS=1.5V				10		20	Ω
Marking : YB						Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

81000TS (KOTO) TA-2049 No.6561-1/4

5LN01S

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=10V, f=1MHz		6.6		pF
Output Capacitance	Coss	VDS=10V, f=1MHz		4.7		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz		1.7		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		18		ns
Rise Time	tr	See specified Test Circuit		42		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		190		ns
Fall Time	tf	See specified Test Circuit		105		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=100mA		1.57		nC
Gate-to-Source Charge	Qgs	VDS=10V, VGS=10V, ID=100mA		0.20		nC
Gate-to-Drain "Miller" Charge	Qgd	VDS=10V, VGS=10V, ID=100mA		0.32		nC
Diode Forward Voltage	VSD	IS=100mA, VGS=0		0.85	1.2	V

Switching Time Test Circuit

VIN	VDD=25V
4V
0V	VIN		ID=50mA
PW=10µs			RL=500Ω
	D		VOUT
D.C.≤ 1%

	G
	5LN01S
P.G	50Ω
	S

	0.10											ID -- VDS
																			0V
	0.09									3.5V								.		.5V
																		3		2
							4.0V														.0V
	0.08																			2
A	0.07
–
											0V											VGS=1.5V
D	0.06							6		.
I
Current,
	0.05
Drain	0.04
	0.03
	0.02
	0.01
	0
	0				0.2							0.4					0.6					0.8				1.0
					Drain-to-Source Voltage, VDS –																	V		IT00054
	12								RDS(on) -- VGS
																								Ta=25°C
Ω	11
	10
–
(on)	9
DS	8								50mA
Source-to-DrainStatic Resistance,State-OnR
	7		ID=30mA
	6
	5
	4
	3
	2
	0		1		2			3				4			5		6			7		8		9		10
					Gate-to-Source Voltage, VGS –																	V		IT00056

		0.20
		0.18
		0.16
A		0.14
–
D		0.12
I
Current,		0.10
Drain		0.08
		0.06
		0.04
		0.02
		0
		0
	100
		7
Ω		5
	–	3
	(on)
		2
Source-to-DrainStatic	DS
	Resistance,State-OnR	10
		7
		5
		3
		2
		1.0
		0.01

ID -- VGS

				VDS=10V
	C
	°
	25		°	C
Ta=	--	25
	°C
	75

0.5	1.0	1.5	2.0	2.5	3.0
Gate-to-Source Voltage, VGS –				V	IT00055
	RDS(on) --		ID

VGS=4V

Ta=75°C

25°C --25°C

2	3	5	7	0.1	2	3
	Drain Current, ID –			A	IT00057

No.6561-2/4