Ordering number : ENN6558
5LN01N
N-Channel Silicon MOSFET
5LN01N
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2178
[5LN01N]
5.0
2.0
0.6
14.0
0.45
0.5
0.45
123
5.0
4.0
4.0
0.44
1 : Source
2 : Drain
3 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 0.4 A
1.3
1.3
SANYO : NP
50 V
±10 V
0.1 A
0.4 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=50mA 0.13 0.18 S
min typ max
Marking : YB Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2033
No.6558-1/4
5LN01N
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω
Static Drain-to-Sourse on-State Resistance RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω
RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ω
Input Capacitance Ciss VDS=10V , f=1MHz 6.6 pF
Output Capacitance Coss VDS=10V , f=1MHz 4.7 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 1.7 pF
Turn-ON Delay Time td(on) See specified Test Circuit 18 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 190 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.57 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.20 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.32 nC
Diode Forward Voltage V
SD
See specified Test Circuit 42 ns
r
See specified Test Circuit 105 ns
f
IS=100mA, VGS=0 0.85 1.2 V
min typ max
Switching Time Test Circuit
V
IN
4V
0V
PW=10µs
D.C.≤1%
VDD=25V
D
ID=50mA
RL=500Ω
V
OUT
V
IN
Ratings
Unit
P.G
0.10
0.09
0.08
0.07
-- A
D
0.06
0.05
0.04
0.03
Drain Current, I
0.02
0.01
0
0
12
11
10
9
(on) -- Ω
DS
8
ID=30mA
7
6
5
4
Static Drain-to-Source
On-State Resistance, R
3
2
012
G
5LN01N
50Ω
4.0V
3.5V
I
D
S
-- V
DS
3.0V
2.5V
2.0V
6.0V
0.2
0.4 0.6 0.8 1.0
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
50mA
3456
78910
Gate-to-Source V oltage, VGS -- V
I
-- V
0.20
0.18
0.16
VGS=1.5V
IT00054
Ta=25°C
IT00056 IT00057
0.14
-- A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0 0.5 1.0 1.5 2.0 3.02.5
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01
Gate-to-Source V oltage, VGS -- V
23 57 2
D
RDS(on) -- I
Drain Current, ID -- A
Ta=75°C
25°C
--25°C
GS
Ta= --25
C
°
75°C
D
0.1
VDS=10V
25°C
IT00055
VGS=4V
3
No.6558-2/4