Sanyo 5LN01M Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6137
5LN01M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : YB Continued on next page.
SSD
SSG
D
R
R
R
WP ≤ elcycytud,sµ01 ≤ %14.0A
PD
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1I
)no(SD
2I
)no(SD
3I
)no(SD
SD
V
SG
V
SD
D
D
D
Package Dimensions
unit:mm
2158
[5LN01M]
0.3
0.425
2.1
1.250
0.425
V,Am1=
0=05V
SG
V,V05=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Aµ001=4.03.1V
D
Am05=31.081.0S
D
V,Am05=
V4=68.7
SG
V,Am03=
V5.2=1.79.9
SG
V,Am01=
V5.1=0102
SG
3
12
0.65
0.65
2.0
0.15
0.3 0.6
0.9
nimpytxam
0.2
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
sgnitaR
05V
01±V
1.0A
51.0W
˚C
˚C
tinU
Ω
Ω
Ω
31000TS (KOTO) TA-2048 No.6137-1/4
5LN01M
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01=6.6Fp
zHM1=f,V01=7.4Fp
zHM1=f,V01=7.1Fp
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS24sn
tiucriCtseTdeificepseeS091sn
tiucriCtseTdeificepseeS501sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am001=
D
0=58.02.1V
SG
sgnitaR
nimpytxam
Am001=75.1Cn
Am001=02.0Cn
Am001=23.0Cn
tinU
V
IN
4V
0V
PW=10µs
D.C.≤1%
P.G
0.10
0.09
0.08
0.07
–A
D
0.06
0.05
0.04
0.03
Drain Current, I
0.02
0.01
0
0
0.2
Drain-to-Source Voltage, VDS–V
12
11
10
– Ω
9
DS(on)
8
ID=30mA
7
6
5
4
Static Drain-to-Source
On-State Resistance, R
3
2
012
Gate-to-Source Voltage, V
VDD=25V
V
IN
D
G
50Ω
I
D
S
-- V
3.5V
4.0V
6.0V
0.4 0.6 0.8 1.0
RDS(on) -- V
50mA
3456
ID=50mA
RL=500Ω
V
OUT
5LN01M
DS
3.0V
2.5V
2.0V
VGS=1.5V
IT00054
GS
Ta=25°C
78910
GS
–V
IT00056
I
-- V
0.20
0.18
0.16
0.14
–A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0 0.5 1.0 1.5 2.0 3.02.5
D
Gate-to-Source Voltage, VGS–V
100
7
5
– Ω
3
2
DS(on)
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01
23 57 23 57
RDS(on) -- I
Ta=75°C
25°C
--25°C
0.1
Drain Current, ID–A
GS
Ta=--25
VDS=10V
°C
°C
25
°C
75
IT00055
D
VGS=4V
1.0
IT00057
No.6137-2/4
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