Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6531
5HP02SP
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
123
2.2
0.4
1.3
1.3
3.0
3.8nom
0.7
0.7
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2180
[5HP02SP]
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %165.0–A
PD
05–V
02±V
41.0–A
52.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD
SD
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,Am07–=
2)no(IDV,Am04–=
I
D
V
V
V,Am1–=
0=05–V
SG
V,V05–=
SD
SG
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
Aµ001–=1–5.2–V
D
Am07–=21.061.0S
D
V01–=7.41.6
SG
V4–=5.61.9
SG
nimpytxam
Marking : XF Continued on next page.
D2000TS (KOTO) TA-2935 No.6531-1/4
sgnitaR
tinU
Ω
Ω
Page 2
5HP02SP
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
d
r
d
f
DS
SD
SD
SD
)no(tiucriCtseTdeificepseeS31sn
)ffo(tiucriCtseTdeificepseeS091sn
I
S
Switching Time Test Circuit
zHM1=f,V01–=32Fp
zHM1=f,V01–=11Fp
zHM1=f,V01–=4Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS59sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,Am041–=
0=38.0–2.1–V
SG
sgnitaR
nimpytxam
D
D
D
Am041–=86.1Cn
Am041–=22.0Cn
Am041–=34.0Cn
tinU
--0.14
--0.12
--0.10
–A
D
--0.08
--0.06
--0.04
Drain Current, I
0V
--10V
PW=10µs
D.C.≤1%
P.G
--8.0V
V
IN
V
--10.0V
IN
G
50Ω
--4.0V
VDD=--25V
D
I
-- V
D
--6.0V
ID=--70mA
RL=357Ω
5HP02SP
S
DS
V
OUT
--3.0V
--0.30
--0.25
–A
--0.20
D
--0.15
--0.10
Drain Current, I
I
D
-- V
GS
Ta= --25
VDS= --10V
°C
25°C
75°C
--0.02
0
0
10
– Ω
(on)
DS
5
Static Drain-to-Source
On-State Resistance, R
4
--26--37--48--59--6
--0.4
Drain-to-Source Voltage, VDS–V
--40mA
ID= --70mA
Gate-to-Source Voltage, V
VGS= --2.5V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--7 --8 --9 --10
–V
GS
--0.05
0
0
IT00262
Ta=25°C
IT00264 IT00265
10
7
– Ω
5
(on)
DS
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
--1
--2
Gate-to-Source Voltage, VGS–V
RDS(on) -- I
23 57 23 5
Drain Current, ID–A
--4--3 --5 --6
D
VGS= --10V
Ta=75°C
25°C
--25°C
--0.1
No.6531-2/4
IT00263
Page 3
5HP02SP
100
7
5
– Ω
3
2
DS(on)
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
1.0
7
5
fs|–S
y
3
2
0.1
7
5
3
2
23 57 23 5
Forward Transfer Admittance, |
0.01
1000
100
Switching Time, SW Time – ns
V
GS –
Gate-to-Source Voltage, V
--0.01
10
1.0
--0.01
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
7
5
3
2
7
5
3
2
7
5
3
2
000.2
23 57 23 5
23 57 23
VDS= --10V
ID= --140mA
0.4
RDS(on) -- I
Ta=75°C
D
25°C
--25°C
yfs
--0.1
-- I
D
Drain Current, ID–A
°C
Ta= --25
75°C
25°C
Drain Current, ID–A
SW Time -- I
Drain Current, ID–A
--0.1
D
--0.1
VGS -- Qg
0.8
1.0
1.2
0.6
Total Gate Charge, Qg – nC
1.4 1.6 1.8 2.0
VGS= --4V
12
10
– Ω
8
DS(on)
6
4
2
Static Drain-to-Source
On-State Resistance, R
0
--40 --20 0 20 40 60 80 100 120 140 160
--1.0
–A
F
--60
7
5
3
2
IT00266 IT00267
VDS= --10V
RDS(on) -- Ta
= --4V
GS
SD
GS
= --10V
= --40mA, V
I
D
= --70mA, V
I
D
Ambient Temperature, Ta – ˚C
I
-- V
F
°C
--0.1
7
5
Forward Current, I
3
2
--0.01
100
10
Ciss, Coss, Crss – pF
1.0
0.3
0.25
–W
D
0.2
0.15
0.1
0.05
--0.2
7
5
3
2
7
5
3
2
0
IT00268 IT00269
VDD= --25V
VGS= --10V
td(off)
t
f
t
r
td(on)
IT00270
Diode Forward Voltage, VSD–V
Ciss, Coss, Crss -- V
--10 --15
--5
Drain-to-Source Voltage, VDS–V
--0.6 --0.8 --1.0 --1.2--0.4
--20 --50--30 --35 --40 --45--25
P
D
Ta=75
Ciss
Coss
Crss
-- Ta
25°C
--25°C
Allowable Power Dissipation, P
0
IT00272
0 20 40 60 100 120 140
Ambient Temperature, Ta – ˚C
80
VGS=0
DS
f=1MHz
IT00271
160
IT01993
No.6531-3/4
Page 4
5HP02SP
Note on usage : Since the 5HP02SP is designed for high-speed switching applications, please avoid using this device in the vicinity of
highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject
to change without notice.
PS No.6531-4/4
Loading...