Sanyo 5HP02SP Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6531

5HP02SP

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.0

0.4

0.5

0.4

0.6

15.0

3.0

1.8

123

2.2

0.4

1.3

1.3

3.0

3.8nom

0.7

0.7

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2180

[5HP02SP]

1 : Source
2 : Drain
3 : Gate
SANYO : SPA

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %165.0–A

PD

05–V
02±V

41.0–A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01–=

1)no(IDV,Am07–=

2)no(IDV,Am04–=

I

D

V
V

V,Am1–=

0=05–V

SG

V,V05–=

SD
SG

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

Aµ001–=1–5.2–V

D

Am07–=21.061.0S

D

V01–=7.41.6

SG

V4–=5.61.9

SG

nimpytxam

Marking : XF Continued on next page.

D2000TS (KOTO) TA-2935 No.6531-1/4

sgnitaR

tinU

Ω
Ω

5HP02SP

Continued from preceding page.

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ecnaticapaCtupnIssiCV

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

d

r

d

f

DS

SD
SD
SD

)no(tiucriCtseTdeificepseeS31sn

)ffo(tiucriCtseTdeificepseeS091sn

I

S

Switching Time Test Circuit

zHM1=f,V01–=32Fp
zHM1=f,V01–=11Fp
zHM1=f,V01–=4Fp

tiucriCtseTdeificepseeS01sn

tiucriCtseTdeificepseeS59sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

V,Am041–=

0=38.0–2.1–V

SG

sgnitaR

nimpytxam

D
D
D

Am041–=86.1Cn
Am041–=22.0Cn
Am041–=34.0Cn

tinU

--0.14

--0.12

--0.10

–A

D

--0.08

--0.06

--0.04

Drain Current, I

0V

--10V
PW=10µs

D.C.≤1%

P.G

--8.0V

V

IN

V

--10.0V

IN

G

50Ω

--4.0V

VDD=--25V

D

I

-- V

D

--6.0V

ID=--70mA
RL=357Ω

5HP02SP

S

DS

V

OUT

--3.0V

--0.30

--0.25

–A

--0.20

D

--0.15

--0.10

Drain Current, I

I

D

-- V

GS

Ta= --25

VDS= --10V

°C

25°C

75°C

--0.02

0

0

10

– Ω

(on)

DS

5

Static Drain-to-Source

On-State Resistance, R

4

--26--37--48--59--6

--0.4

Drain-to-Source Voltage, VDS–V

--40mA

ID= --70mA

Gate-to-Source Voltage, V

VGS= --2.5V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

RDS(on) -- V

GS

--7 --8 --9 --10

–V

GS

--0.05

0

0

IT00262

Ta=25°C

IT00264 IT00265

10

7

– Ω

5

(on)

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

--1

--2

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

23 57 23 5

Drain Current, ID–A

--4--3 --5 --6

D

VGS= --10V

Ta=75°C

25°C

--25°C

--0.1

No.6531-2/4

IT00263