Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6131
5HP02M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
查询5HP02M供应商
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : XF Continued on next page.
SSD
SSG
D
R
R
WP ≤ elcycytud,sµ01 ≤ %165.0–A
PD
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1I
)no(SD
2I
)no(SD
SD
V
SG
V
SD
D
D
SD
SD
SD
Package Dimensions
unit:mm
2158
[5HP02M]
0.3
0.425
2.1
1.250
0.425
V,Am1–=
0=05–V
SG
V,V05–=
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
V,Am07–=
V,Am04–=
Aµ001–=1–5.2–V
D
D
Am007–=21.061.0S
V01–=7.41.6
SG
V4–=5.61.9
SG
zHM1=f,V01–=32Fp
zHM1=f,V01–=11Fp
zHM1=f,V01–=4Fp
12
0.65
0.65
2.0
3
0.15
0.3 0.6
0.9
nimpytxam
0.2
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
05–V
02±V
41.0–A
51.0W
sgnitaR
˚C
˚C
tinU
Ω
Ω
D1099TS (KOTO) TA-1850 No.6131-1/4
5HP02M
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
I
DS
S
V,Am041–=
Switching Time Test Circuit
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS091sn
tiucriCtseTdeificepseeS59sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=38.02.1V
SG
sgnitaR
nimpytxam
D
D
D
Am041–=86.1Cn
Am041–=22.0Cn
Am041–=34.0Cn
tinU
--0.14
--0.12
--0.10
–A
D
--0.08
--0.06
--0.04
Drain Current, I
0V
--10V
PW=10µs
D.C.≤1%
P.G
--8.0V
V
IN
--10.0V
V
IN
G
50Ω
VDD=--25V
I
D
--6.0V
--4.0V
D
S
-- V
ID=--70mA
RL=357Ω
V
OUT
5HP02M
DS
--3.0V
--0.30
--0.25
–A
--0.20
D
--0.15
--0.10
Drain Current, I
I
D
-- V
GS
°C
Ta=--25
VDS=--10V
25°C
75°C
--0.02
0
0
--0 .4
Drain-to-Source Voltage, VDS–V
10
– Ω
RDS(on) -- V
--40mA
DS(on)
5
4
3
Static Drain-to-Source
On-State Resistance, R
2
0 --1 --26--37--48--59--6
Gate-to-Source Voltage, VGS–V
VGS=--2.5V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
IT00262
GS
Ta=25°C
ID=--70mA
--7 --8 --9 --10
IT00264
--0.05
0
0
--1
Gate-to-Source Voltage, VGS–V
10
7
– Ω
5
DS(on)
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
23 57 23 57
--2
RDS(on) -- I
--4--3 --5 --6
D
Ta=75°C
25°C
--25°C
Drain Current, ID–A
--0 .1
IT00263
VGS=--10V
--1 .0
IT00265
No.6131-2/4
100
7
5
3
– Ω
2
DS(on)
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
fs|–S
y
Forward Transfer Admittance, |
0.01
1000
Switching Time, SW Time – ns
V
–
GS
Gate-to-Source Voltage, V
1.0
1.0
0.1
100
1.0
--1 0
--0.01
--0.01
10
--0.01
--9
--8
--7
--6
--5
--4
--3
--2
--1
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
23 57 23 57
23 57 23 57
23 57 23
VDS=--10V
ID=--140mA
RDS(on) -- I
D
Ta=75°C
--25°C
25°C
Drain Current, ID–A
--0 .1
yfs
-- I
D
°C
Ta=--25
75°C
25°C
Drain Current, ID–A
Drain Current, ID–A
--0 .1
SW Time -- I
D
--0 .1
VGS -- Qg
5HP02M
VGS=--4V
12
10
– Ω
8
DS(on)
6
4
2
Static Drain-to-Source
ON-State Resistance, R
0
--40 --20 0 20 40 60 80 100 120 140 160
--1 .0
–A
F
--0 .1
Forward Current, I
--0.01
100
10
Ciss,Coss,Crss – pF
1.0
0.20
7
5
3
2
7
5
3
2
--6 0
7
5
3
2
7
5
3
2
0
0
--5
--1 .0
IT00266 IT00267
VDS=--10V
--1 .0
IT00268 IT00269
VDD=--25V
VGS=--10V
td(off)
t
f
t
r
td(on)
IT00270 IT00271
–W
D
0.15
0.10
0.05
Allowable Power Dissipation, P
RDS(on) -- Ta
=- -4V
GS
=- -40mA, V
I
D
=- -70mA, V
I
D
GS
=- -10V
Ambient Temperature, Ta – ˚C
I
-- V
F
SD
°C
25°C
Ta=75
--0.6 --0.8 --1.0 --1.2--0.2 --0.4
Diode Forward Voltage, VSD–V
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--10 --15
Drain-to-Source Voltage, VDS–V
--2 0 --5 0--30 --35 --40 --45--25
P
D
-- Ta
VGS=0
°C
--25
DS
f=1MHz
000.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg – nC
1.4 1.6 1.8 2.0
IT00272 IT00273
0020 40
Ambient Temperature, Ta – ˚C
60
80 100 120
140 160
No.6131-3/4
5HP02M
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.
PS No.6131-4/4
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