SANYO 5HP02M Technical data

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6131

5HP02M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

查询5HP02M供应商

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : XF Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %165.0–A

PD

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1I

)no(SD

2I

)no(SD

SD

V

SG

V

SD

D
D

SD
SD
SD

Package Dimensions

unit:mm

2158

[5HP02M]

0.3

0.425

2.1

1.250

0.425

V,Am1–=

0=05–V

SG

V,V05–=

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

V,Am07–=
V,Am04–=

Aµ001–=1–5.2–V

D
D

Am007–=21.061.0S

V01–=7.41.6

SG

V4–=5.61.9

SG

zHM1=f,V01–=32Fp
zHM1=f,V01–=11Fp
zHM1=f,V01–=4Fp

12

0.65

0.65

2.0

3

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP3

05–V
02±V

41.0–A

51.0W

sgnitaR

˚C
˚C

tinU

Ω
Ω

D1099TS (KOTO) TA-1850 No.6131-1/4

5HP02M

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

DS

S

V,Am041–=

Switching Time Test Circuit

tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS091sn
tiucriCtseTdeificepseeS59sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=38.02.1V

SG

sgnitaR

nimpytxam

D
D
D

Am041–=86.1Cn
Am041–=22.0Cn
Am041–=34.0Cn

tinU

--0.14

--0.12

--0.10

–A

D

--0.08

--0.06

--0.04

Drain Current, I

0V

--10V
PW=10µs

D.C.≤1%

P.G

--8.0V

V

IN

--10.0V

V

IN

G

50Ω

VDD=--25V

I

D

--6.0V

--4.0V

D

S

-- V

ID=--70mA
RL=357Ω

V

OUT

5HP02M

DS

--3.0V

--0.30

--0.25

–A

--0.20

D

--0.15

--0.10

Drain Current, I

I

D

-- V

GS

°C

Ta=--25

VDS=--10V

25°C

75°C

--0.02

0

0

--0 .4

Drain-to-Source Voltage, VDS–V

10

– Ω

RDS(on) -- V

--40mA

DS(on)

5

4

3

Static Drain-to-Source

On-State Resistance, R

2

0 --1 --26--37--48--59--6

Gate-to-Source Voltage, VGS–V

VGS=--2.5V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

IT00262

GS

Ta=25°C

ID=--70mA

--7 --8 --9 --10

IT00264

--0.05

0

0

--1

Gate-to-Source Voltage, VGS–V

10

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

23 57 23 57

--2

RDS(on) -- I

--4--3 --5 --6

D

Ta=75°C

25°C

--25°C

Drain Current, ID–A

--0 .1

IT00263

VGS=--10V

--1 .0

IT00265

No.6131-2/4