Sanyo 5HP01SS Specifications
Ordering number : ENN6644
5HP01SS
P-Channel Silicon MOSFET
5HP01SS
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2179
[5HP01SS]
1.4
0.25
0.45
132
0.2
0.3
0.8
0.3
1.4
0.1
1 : Gate
2 : Source
0.6
Specifications
3 : Drain
SANYO : SSFP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.28 A
--50 V
±20 V
--0.07 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--40mA 50 70 mS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Unit
72600 TS IM TA-1967
No.6644-1/4
5HP01SS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate Drain Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward Voltage V
SD
See specified Test Circuit 10 ns
r
See specified Test Circuit 150 ns
f
IS=--70mA, VGS=0 0.85 1.2 V
Marking : XC
Switching Time Test Circuit
Ratings
min typ max
Unit
0V
--10V
PW=10µs
D.C.≤1%
P.G
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
V
IN
G
50Ω
VDD= --25V
D
I
-- V
D
--8.0V
--10.0V
ID= --40mA
RL=625Ω
V
5HP01SS
S
DS
--6.0V
OUT
--4.0V
-- A
D
--0.14
--0.12
--0.10
--0.08
--0.06
I
D
-- V
GS
Ta= --25°C
°C
75
VDS= --10V
25°C
V
IN
--3.0V
--0.04
Drain Current, I
--0.01
0
0
50
--0.4
(on) -- Ω
DS
25
ID= --20mA
20
Static Drain-to-Source
On-State Resistance, R
15
10
--230--335--440--545--6
VGS= --2.5V
Drain-to-Source V oltage, VDS -- V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--40mA
Gate-to-Source V oltage, VGS -- V
--7 --8 --9 --10
--0.02
0
0
IT00103 IT00104
Ta=25
°C
100
7
(on) -- Ω
5
--1
--2
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
--4--3 --5 --6
D
VGS= --10V
DS
3
Ta=75°C
IT00105
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
23 57 23
25°C
--25°C
--0.1
Drain Current, ID -- A
No.6644-2/4
IT00106
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