Sanyo 5HP01S Specifications
Ordering number : ENN6683
5HP01S
P-Channel Silicon MOSFET
5HP01S
Ultrahigh Speed Switching Applications
Features
•
Low ON-r esistance .
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2192
[5HP01S]
0.3
3
2
1
0.2
0.5 0.5
1.6
0.4
0.8
0.4
1.6
0.75
0.6
0.1
0 to 0.1
0.1max
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source V oltage V
Gate-to-Source V oltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle ≤1% --0.28 A
--50 V
±20 V
--0.07 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown V oltage V
Zero-Gate V oltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
Forward Transfer Admittance | yfs | VDS=--10V, ID=--40mA 50 70 mS
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on ne xt pa ge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3123
No.6683-1/4
Unit
5HP01S
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified T est Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified T est Circuit 100 ns
Fall Time t
T otal Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate-to-Source Charge Qg s VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward V oltage V
SD
See specified T est Circuit 10 ns
r
See specified T est Circuit 150 ns
f
IS=--70mA, VGS=0 --0.85 --1.2 V
Marking : XC
Switching Time Test Circuit
Ratings
min typ max
Unit
V
IN
0V
--10V
PW=10µs
D.C.≤1%
P.G
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
V
IN
G
50Ω
VDD= --25V
ID= --40mA
RL=625Ω
D
S
I
-- V
D
--8.0V
--10.0V
V
OUT
5HP01S
DS
--6.0V
--4.0V
--3.0V
--0.14
--0.12
--0.10
-- A
D
--0.08
--0.06
--0.04
Drain Current, I
I
D
-- V
GS
Ta= --25°C
°C
75
VDS= --10V
25°C
--0.01
0
0
50
--0.4
(on) -- Ω
DS
25
ID= --20mA
20
Static Drain-to-Source
On-State Resistance, R
15
10
--230--335--440--545--6
VGS= --2.5V
Drain-to-Source V oltage, VDS -- V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--40mA
Gate-to-Source V oltage, VGS -- V
--7 --8 --9 --10
--0.02
0
IT00103 IT00104
Ta=25
°C
100
7
(on) -- Ω
5
--1
0
--2
--4--3 --5 --6
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
D
VGS= --10V
DS
3
Ta=75°C
IT00105
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
25°C
--25°C
23 57 23
--0.1
Drain Current, ID -- A
No.6683-2/4
IT00106
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