Page 1
Ordering number : ENN6683
5HP01S
P-Channel Silicon MOSFET
5HP01S
Ultrahigh Speed Switching Applications
Features
•
Low ON-r esistance .
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2192
[5HP01S]
0.3
3
2
1
0.2
0.5 0.5
1.6
0.4
0.8
0.4
1.6
0.75
0.6
0.1
0 to 0.1
0.1max
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source V oltage V
Gate-to-Source V oltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle ≤1% --0.28 A
--50 V
±20 V
--0.07 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown V oltage V
Zero-Gate V oltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
Forward Transfer Admittance | yfs | VDS=--10V, ID=--40mA 50 70 mS
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on ne xt pa ge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3123
No.6683-1/4
Unit
Page 2
5HP01S
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified T est Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified T est Circuit 100 ns
Fall Time t
T otal Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate-to-Source Charge Qg s VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward V oltage V
SD
See specified T est Circuit 10 ns
r
See specified T est Circuit 150 ns
f
IS=--70mA, VGS=0 --0.85 --1.2 V
Marking : XC
Switching Time Test Circuit
Ratings
min typ max
Unit
V
IN
0V
--10V
PW=10µs
D.C.≤1%
P.G
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
V
IN
G
50Ω
VDD= --25V
ID= --40mA
RL=625Ω
D
S
I
-- V
D
--8.0V
--10.0V
V
OUT
5HP01S
DS
--6.0V
--4.0V
--3.0V
--0.14
--0.12
--0.10
-- A
D
--0.08
--0.06
--0.04
Drain Current, I
I
D
-- V
GS
Ta= --25°C
°C
75
VDS= --10V
25°C
--0.01
0
0
50
--0.4
(on) -- Ω
DS
25
ID= --20mA
20
Static Drain-to-Source
On-State Resistance, R
15
10
--230--335--440--545--6
VGS= --2.5V
Drain-to-Source V oltage, VDS -- V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--40mA
Gate-to-Source V oltage, VGS -- V
--7 --8 --9 --10
--0.02
0
IT00103 IT00104
Ta=25
°C
100
7
(on) -- Ω
5
--1
0
--2
--4--3 --5 --6
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
D
VGS= --10V
DS
3
Ta=75°C
IT00105
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
25°C
--25°C
23 57 23
--0.1
Drain Current, ID -- A
No.6683-2/4
IT00106
Page 3
1000
7
5
3
(on) -- Ω
2
DS
100
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
1.0
7
5
3
2
0.1
7
5
3
2
Ta=75°C
Ta= --25°C
Forward Transfer Admittance, yfs -- S
0.01
--0.01
1000
7
5
3
2
100
7
5
3
2
10
7
5
Switching Time, SW Time -- ns
3
2
1.0
--0.01
--10
VDS= --10V
--9
ID= --0.07A
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Sourse V oltage, V
--1
000.2
5HP01S
RDS(on) -- I
D
VGS= --4V
40
35
30
(on) -- Ω
25
DS
20
15
10
25°C
--25°C
23 57 23
Drain Current, ID -- A
y
fs -- I
--0.1
IT00107
D
VDS= --10V
Static Drain-to-Source
On-State Resistance, R
5
0
--60
--40 --20 0 20 40 60 80 100 120 140 160
3
2
--0.1
-- A
F
7
5
25°C
°C
75
23 57 23
Drain Current, ID -- A
SW Time -- I
--0.1
IT00109
D
VDD= --25V
VGS= --10V
t
f
td(off)
td(on)
t
r
23 57
Drain Current, ID -- A
--0.1
IT00111
VGS -- Qg
3
Forward Current, I
2
--0.01
--0.5
100
7
5
3
2
10
7
5
3
2
1.0
7
Ciss, Coss, Crss -- pF
5
3
2
0.1
0
0.20
-- W
D
0.15
0.10
0.05
Allowable Power Dissipation, P
0
20 40 60 80
0.4
0.6
0.8
1.0
1.2
1.4 1.6
Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C
IT00113
0
RDS(on) -- Ta
= --4V
GS
= --20mA, V
I
D
= --40mA, V
I
D
GS
= --10V
Ambient Temperature, Ta -- °C
I
-- V
F
SD
°C
25°C
Ta=75
--25°C
--0.8 --0.9 --1.1--1.0 --1.2--0.6 --0.7
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--20--10 --30--25
--15--5
Drain-to-Source V oltage, VDS -- V
PD -- Ta
100
IT00108
V
= 0
GS
IT00110
DS
f=1MHz
--40--35 --50--45
IT00112
120 140 160
IT02381
No.6683-3/4
Page 4
5HP01S
Note on usa ge : Since the 5HP01S is designed f or high-speed s witching applications, please a void using
this device in the vicinity of highl y charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
No.6683-4/4
PS
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