Ordering number : ENN6683
5HP01S
P-Channel Silicon MOSFET
5HP01S
UltrahighSpeedSwitching Applications
Features |
Package Dimensions |
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• |
Low ON-resistance . |
unit : mm |
• |
Ultrahigh-speed switching. |
2192 |
• 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25 °C
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[5HP01S] |
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0.4 |
0.75 |
0.3 |
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0.6 |
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3 |
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0 to 0.1 |
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0.8 |
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1.6 |
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0.2 1 |
2 |
0.4 |
0.1 |
0.5 0.5 |
0.1max |
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1.6 |
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1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Drain-to-Source V oltage |
VDSS |
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-50 |
V |
Gate-to-Source V oltage |
VGSS |
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±20 |
V |
Drain Current (DC) |
ID |
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-0.07 |
A |
Drain Current (Pulse) |
IDP |
PW≤10μs,dutycycle ≤1% |
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-0.28 |
A |
AllowablePowerDissipation |
PD |
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0.15 |
W |
Channel Temperature |
Tch |
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150 |
°C |
Storage Temperature |
Tstg |
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-55 to +150 |
°C |
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Electrical Characteristics a t Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Drain-to-Source Breakdown V oltage |
V(BR)DSS |
ID=-1mA, V GS=0 |
--50 |
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V |
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Zero-Gate V oltage Drain Current |
IDSS |
VDS=-50V, VGS=0 |
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-10 |
μA |
Gate-to-Sourse Leakage Current |
IGSS |
VGS=±16V, VDS=0 |
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±10 |
μA |
Cutoff Voltage |
VGS(off) |
VDS=-10V, ID=-100μA |
--1 |
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--2.5 |
V |
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Forward Transfer Admittance |
| yfs | |
VDS=--10V, ID=--40mA |
50 |
70 |
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mS |
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Static Drain-to-Source On-State Resistance |
RDS(on)1 |
ID=-40mA, V GS=-10V |
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17 |
22 |
Ω |
RDS(on)2 |
ID=-20mA, V GS=-4V |
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23 |
32 |
Ω |
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Continued on ne xt pa ge.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3123 No.6683-1/4
5HP01S
Continued from preceding page.
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Input Capacitance |
Ciss |
VDS=-10V, f=1MHz |
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6.2 |
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pF |
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Output Capacitance |
Coss |
VDS=-10V, f=1MHz |
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4.0 |
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pF |
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Reverse Transfer Capacitance |
Crss |
VDS=-10V, f=1MHz |
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1.3 |
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pF |
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Turn-ON Delay |
Time |
td(on) |
See specified |
Test Circuit |
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13 |
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ns |
Rise Time |
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tr |
See specified |
Test Circuit |
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10 |
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ns |
Turn-OFF Delay |
Time |
td(off) |
See specified |
Test Circuit |
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100 |
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ns |
Fall Time |
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tf |
See specified |
Test Circuit |
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150 |
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ns |
Total Gate Charge |
Qg |
VDS=-10V, VGS=-10V, ID=-70mA |
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1.32 |
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nC |
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Gate-to-Source Charge |
Qgs |
VDS=-10V, VGS=-10V, ID=-70mA |
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0.17 |
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nC |
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Gate-to-Drain “Miller” Charge |
Qgd |
VDS=-10V, VGS=-10V, ID=-70mA |
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0.34 |
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nC |
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Diode Forward V oltage |
VSD |
IS=-70mA, V GS=0 |
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-0.85 |
-1.2 |
V |
Marking : XC
Switching Time Test Circuit
VIN |
VDD= --25V |
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0V |
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--10V |
VIN |
ID= --40mA |
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PW=10µs |
RL=625Ω |
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D |
VOUT |
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D.C.≤ 1% |
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G |
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5HP01S |
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P.G |
50Ω |
S |
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Drain Current, ID -- A
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
ID -- VDS
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-- |
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. 0V |
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8 |
.0V |
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6 |
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.0V |
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-- |
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10 |
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-- |
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.0V 4 --
--3.0V
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--0.01 |
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VGS= --2.5V |
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0 |
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0 |
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--0.2 |
--0.4 --0.6 |
--0.8 |
--1.0 |
--1.2 --1.4 |
--1.6 |
--1.8 |
--2.0 |
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Drain-to-Source Voltage, VDS |
-- V |
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IT00103 |
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50 |
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RDS(on) -- VGS |
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Ta=25°C |
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Ω |
45 |
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-- |
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(on) |
40 |
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DS |
35 |
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Source-to-DrainStatic Resistance,State-On R |
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30 |
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25 |
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--40mA |
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20 |
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ID= --20mA |
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15 |
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10 |
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--2 |
--3 |
--4 |
--5 |
--6 |
--7 |
--8 |
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--9 |
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--10 |
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Gate-to-Source Voltage, VGS |
-- V |
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IT00105 |
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--0.14 |
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--0.12 |
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A |
--0.10 |
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-- |
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D |
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I |
--0.08 |
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Current, |
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--0.06 |
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Drain |
--0.04 |
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--0.02 |
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0 |
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0 |
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Ω |
100 |
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7 |
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-- |
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(on) |
5 |
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DS |
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-to-DrainStaticSource Resistance,State-On R |
3 |
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2 |
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10 |
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--0.01 |
ID -- VGS
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C |
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VDS= --10V |
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° |
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25 |
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C |
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-- |
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° |
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Ta= |
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25 |
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C |
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° |
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75 |
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--1 |
--2 |
--3 |
--4 |
--5 |
--6 |
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Gate-to-Source Voltage, VGS |
-- V |
IT00104 |
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RDS(on) |
-- ID |
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VGS= --10V
Ta=75°C
25°C
--25°C
2 |
3 |
5 |
7 |
--0.1 |
2 |
3 |
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Drain Current, ID |
-- A |
IT00106 |
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No.6683-2/4 |