Sanyo 5HP01N Specifications
Ordering number : ENN6642
5HP01N
P-Channel Silicon MOSFET
5HP01N
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Specifications
Package Dimensions
unit : mm
2178
0.6
1.3
[5HP01N]
5.0
2.0
14.0
0.45
0.5
0.45
123
1.3
5.0
4.0
4.0
0.44
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.28 A
--50 V
±20 V
--0.07 A
0.4 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
(BR)DSSID
DSS
GSS
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72600 TS IM TA-1974
No.6642-1/4
Unit
5HP01N
Continued from preceding page.
Parameter Symbol Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate Drain Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward Voltage V
yfs
RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω
SD
VDS=--10V, ID=--40mA 50 70 mS
See specified Test Circuit 10 ns
r
See specified Test Circuit 150 ns
f
IS=--70mA, VGS=0 0.85 1.2 V
Marking : XC
Switching Time Test Circuit
V
IN
VDD= --25V
ID= --40mA
RL=625Ω
D
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
V
IN
Ratings
min typ max
Unit
P.G
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
--0.01
0
0
50
G
5HP01N
50Ω
I
D
-- V
--8.0V
S
DS
--6.0V
--4.0V
--10.0V
--0.4
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
I
-- V
-- A
D
--0.14
--0.12
--0.10
--0.08
--0.06
D
GS
Ta= --25°C
°C
75
--3.0V
--0.04
Drain Current, I
VGS= --2.5V
IT00103 IT00104
°C
Ta=25
--0.02
100
0
0
--1
--2
--4--3 --5 --6
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
7
D
VDS= --10V
25°C
VGS= --10V
(on) -- Ω
DS
25
ID= --20mA
20
Static Drain-to-Source
On-State Resistance, R
15
10
--230--335--440--545--6
--40mA
--7 --8 --9 --10
Gate-to-Source V oltage, VGS -- V
IT00105
(on) -- Ω
5
DS
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID -- A
--0.1
IT00106
No.6642-2/4
Loading...