Sanyo 5HP01C Specifications

Ordering number : ENN6641

5HP01C

P-Channel Silicon MOSFET

5HP01C

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2091A

[5HP01C]

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

1.5

0.5

0.16

0 to 0.1

2.5

1 : Gate
2 : Source
3 : Drain

1.1

Specifications

0.8

SANYO : CP

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --0.28 A

--50 V

±20 V

--0.07 A

0.25 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω

=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--40mA 50 70 mS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72600 TS IM TA-1970

No.6641-1/4

Unit

5HP01C

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate Drain Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward Voltage V

SD

See specified Test Circuit 10 ns

r

See specified Test Circuit 150 ns

f

IS=--70mA, VGS=0 0.85 1.2 V

min typ max

Marking : XC

Switching Time Test Circuit

Ratings

Unit

0V

--10V
PW=10µs

D.C.≤1%

P.G

--0.07

--0.06

--0.05

-- A
D

--0.04

--0.03

--0.02

Drain Current, I

V

IN

G

50Ω

VDD= --25V

D

I

-- V

D

--8.0V

--10.0V

ID= --40mA
RL=625Ω

V

5HP01C

S

DS

--6.0V

OUT

--4.0V

-- A
D

--0.14

--0.12

--0.10

--0.08

--0.06

I

D

-- V

GS

Ta= --25°C

°C

75

VDS= --10V

25°C

V

IN

--3.0V

--0.04

Drain Current, I

--0.01

0

0

50

--0.4

(on) -- Ω

DS

25

ID= --20mA

20

Static Drain-to-Source

On-State Resistance, R

15

10

--230--335--440--545--6

VGS= --2.5V

Drain-to-Source V oltage, VDS -- V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

RDS(on) -- V

GS

--40mA

Gate-to-Source V oltage, VGS -- V

--7 --8 --9 --10

--0.02

0

0

IT00103 IT00104

Ta=25

°C

100

7

(on) -- Ω

5

--1

--2

Gate-to-Source V oltage, VGS -- V

RDS(on) -- I

--4--3 --5 --6

D

VGS= --10V

DS

3

Ta=75°C

IT00105

2

Static Drain-to-Source

On-State Resistance, R

10

--0.01

23 57 23

25°C

--25°C

--0.1

Drain Current, ID -- A

No.6641-2/4

IT00106

1000

7
5

3

(on) -- Ω

2

DS

100

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

10

--0.01

1.0
7

5

3
2

0.1
7
5

3
2

Ta= --25°C

Forward Transfer Admittance, yfs -- S

0.01

--0.01

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time -- ns

3
2

1.0

--0.01

--10

VDS= --10V

--9

ID= --0.07A

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Sourse V oltage, V

--1

000.2

5HP01C

RDS(on) -- I

D

VGS= --4V

40

35

30

(on) -- Ω

25

25°C

Ta=75°C

DS

20

15

10

Static Drain-to-Source

On-State Resistance, R

5

--25°C

23 57 2

Drain Current, ID -- A

yfs





-- I

--0.1

IT00107

D

VDS= --10V

3

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

3

2

--0.1

-- A
F

7

5

25°C

°C

75

23 57 23

Drain Current, ID -- A

SW Time -- I

--0.1

IT00109

D

VDD= --25V
VGS= --10V

t

f

td(off)

td(on)

t

r

23 57

Drain Current, ID -- A

--0.1

IT00111

VGS -- Qg

3

Forward Current, I

2

--0.01

--0.5

100

7
5

3
2

10

7
5

3
2

1.0
7

Ciss, Coss, Crss -- pF

5
3

2

0.1

0

0.30

0.25

-- W
D

0.20

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0.4

0.6

0.8

1.0

1.2

1.4 1.6

Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C

IT00113

0 40 120 1608020 100 14060

RDS(on) -- Ta

= --4V

GS

= --20mA, V

I

D

= --40mA, V

I

D

= --10V

GS

Ambient Temperature, Ta -- °C

I

-- V

F

SD

°C

25°C

Ta=75

--25°C

--0.8 --0.9 --1.1--1.0 --1.2--0.6 --0.7

Diode Forward V oltage, VSD -- V

Ciss, Coss, Crss -- V

Ciss
Coss

Crss

--20--10 --30--25

--15--5

Drain-to-Source V oltage, VDS -- V

PD -- Ta

V

DS

f=1MHz

--40--35 --50--45

No.6641-3/4

IT00108

GS

IT00110

IT00112

IT02382

= 0

5HP01C

Note on usage : Since the 5HP01C is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.

PS

No.6641-4/4