Sanyo 5HN02SP Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6535

5HN02SP

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.0

0.4

0.5

0.4

0.6

15.0

3.0

1.8

123

2.2

0.4

1.3

1.3

3.0

3.8nom

0.7

0.7

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2180

[5HN02SP]

1 : Source
2 : Drain
3 : Gate
SANYO : SPA

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %18.0A

PD

05V
02±V

2.0A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,Am001=

2)no(IDV,Am05=

I

V,Am1=

D

V

SD

V

SG

0=05V

SG

V,V05=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Aµ001=14.2V

D

Am001=22.013.0S

D

V01=8.13.2

SG

V4=3.22.3

SG

nimpytxam

Marking : YF Continued on next page.

11801TS (KOTO) TA-2937 No.6535-1/4

sgnitaR

tinU

Ω
Ω

5HN02SP

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

zHM1=f,V01=22Fp
zHM1=f,V01=21Fp
zHM1=f,V01=6.4Fp

tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS011sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am002=

D

0=38.02.1V

SG

sgnitaR

nimpytxam

Am002=68.1Cn
Am002=82.0Cn
Am002=54.0Cn

tinU

10V

P.G

0.20

0.18

0.16

0.14

–A

D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02

– Ω

(on)

DS

V

IN

0V

PW=10µs
D.C.≤1%

0

0

VDD=25V

D

S

I

ID=100mA
RL=250Ω

V

OUT

5HN02SP

-- V

D

DS

V

IN

G

50Ω

6.0V

8.0V

3.0V

4.0V

10.0V

0.2

0.4 0.6

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

ID=100mA

50mA

GS

I

-- V

0.40

VDS=10V

0.35

0.30

–A

0.25

D

2.5V

VGS=2.0V

0.8 1.00.1 0.3 0.5 0.7 0.9

IT00250 IT00251

0.20

0.15

Drain Current, I

0.10

0.05

0

0

0.5

Gate-to-Source Voltage, VGS–V

10

D

1.0

RDS(on) -- I

1.5

GS

°C

Ta=75

2.5 3.0 3.5

2.0

D

--25°C

Ta=25°C

7

– Ω

5

(on)

DS

3

2

Ta=75°C

25°C

25°C

VGS=10V

Static Drain-to-Source

On-State Resistance, R

0011223344556678910

Gate-to-Source Voltage, VGS–V

--25°C

Static Drain-to-Source

On-State Resistance, R

1.0

IT00252 IT00253

0.01

23 57 23 5

Drain Current, ID–A

0.1

No.6535-2/4