Sanyo 5HN02SP Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6535
5HN02SP
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
123
2.2
0.4
1.3
1.3
3.0
3.8nom
0.7
0.7
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2180
[5HN02SP]
1 : Source 2 : Drain 3 : Gate SANYO : SPA
SSD SSG
WP elcycytud,sµ01 %18.0A
PD
05V 02±V
2.0A
52.0W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD SD
SSD)RB( SSD SSG
)ffo(VSDI,V01=
1)no(IDV,Am001=
2)no(IDV,Am05=
I
V,Am1=
D
V
SD
V
SG
0=05V
SG
V,V05=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Aµ001=14.2V
D
Am001=22.013.0S
D
V01=8.13.2
SG
V4=3.22.3
SG
nimpytxam
Marking : YF Continued on next page.
11801TS (KOTO) TA-2937 No.6535-1/4
sgnitaR
tinU
Ω Ω
5HN02SP
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD SD SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01=22Fp zHM1=f,V01=21Fp zHM1=f,V01=6.4Fp
tiucriCtseTdeificepseeS21sn tiucriCtseTdeificepseeS21sn tiucriCtseTdeificepseeS062sn tiucriCtseTdeificepseeS011sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am002=
D
0=38.02.1V
SG
sgnitaR
nimpytxam
Am002=68.1Cn Am002=82.0Cn Am002=54.0Cn
tinU
10V
P.G
0.20
0.18
0.16
0.14
–A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
(on)
DS
V
IN
0V
PW=10µs D.C.≤1%
0
0
VDD=25V
D
S
I
ID=100mA RL=250
V
OUT
5HN02SP
-- V
D
DS
V
IN
G
50
6.0V
8.0V
3.0V
4.0V
10.0V
0.2
0.4 0.6
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
ID=100mA
50mA
GS
I
-- V
0.40
VDS=10V
0.35
0.30
–A
0.25
D
2.5V
VGS=2.0V
0.8 1.00.1 0.3 0.5 0.7 0.9
IT00250 IT00251
0.20
0.15
Drain Current, I
0.10
0.05
0
0
0.5
Gate-to-Source Voltage, VGS–V
10
D
1.0
RDS(on) -- I
1.5
GS
°C
Ta=75
2.5 3.0 3.5
2.0
D
--25°C
Ta=25°C
7
5
(on)
DS
3
2
Ta=75°C
25°C
25°C
VGS=10V
Static Drain-to-Source
On-State Resistance, R
0011223344556678910
Gate-to-Source Voltage, VGS–V
--25°C
Static Drain-to-Source
On-State Resistance, R
1.0
IT00252 IT00253
0.01
23 57 23 5
Drain Current, ID–A
0.1
No.6535-2/4
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