Sanyo 5HN02N Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6534
5HN02N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2178
[5HN02N]
1 : Source
2 : Drain
3 : Gate
SANYO : NP
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %18.0A
PD
05V
02±V
2.0A
4.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD
SD
SSD)RB(
SSD
SSG
)ffo(VSDI,V01=
1)no(IDV,Am001=
2)no(IDV,Am05=
I
V,Am1=
D
V
SD
V
SG
0=05V
SG
V,V05=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Aµ001=14.2V
D
Am001=22.013.0S
D
V01=8.13.2
SG
V4=3.22.3
SG
nimpytxam
Marking : YF Continued on next page.
11801TS (KOTO) TA-2939 No.6534-1/4
sgnitaR
tinU
Ω
Ω
5HN02N
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01=22Fp
zHM1=f,V01=21Fp
zHM1=f,V01=6.4Fp
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS011sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am002=
D
0=38.02.1V
SG
sgnitaR
nimpytxam
Am002=68.1Cn
Am002=82.0Cn
Am002=54.0Cn
tinU
0.20
0.18
0.16
0.14
–A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
– Ω
(on)
DS
0
0
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
VDD=25V
I
D
D
S
-- V
ID=100mA
RL=250Ω
V
OUT
5HN02N
DS
V
IN
G
50Ω
6.0V
8.0V
4.0V
3.0V
10.0V
0.2
0.4 0.6
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
ID=100mA
50mA
GS
I
-- V
0.40
VDS=10V
0.35
0.30
–A
0.25
D
2.5V
VGS=2.0V
0.8 1.00.1 0.3 0.5 0.7 0.9
IT00250 IT00251
0.20
0.15
Drain Current, I
0.10
0.05
0
0
0.5
Gate-to-Source Voltage, VGS–V
10
D
1.0
RDS(on) -- I
1.5
GS
°C
Ta=75
2.5 3.0 3.5
2.0
D
--25
Ta=25°C
7
– Ω
5
(on)
DS
3
2
Ta=75°C
25°C
°C
25°C
VGS=10V
Static Drain-to-Source
On-State Resistance, R
0011223344556678910
Gate-to-Source Voltage, V
GS
–V
--25°C
Static Drain-to-Source
On-State Resistance, R
1.0
IT00252 IT00253
0.01
23 57 23 5
Drain Current, ID–A
0.1
No.6534-2/4
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