Sanyo 5HN02C Specifications

Ordering number:ENN6363

N-Channel Silicon MOSFET

5HN02C

Ultrahigh-Speed Switching Applications

	Features	Package Dimensions
	· Low ON resistance.	unit:mm
	· Ultrahigh-speed switching.	2091A
	· 4V drive.

			[5HN02C]
	0.4	3		0.5		0.16
				1.5	2.5	0 to 0.1
1	0.95	0.95	2	0.5
	1.9
	2.9
						1 : Gate
				0.8	1.1	2 : Source
						3 : Drain

Specifications						SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter	Symbol		Conditions			Ratings				Unit
Drain-to-Source Voltage	VDSS							50		V
Gate-to-Source Voltage	VGSS							±20		V
Drain Current (DC)	ID							0.2		A
Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%						0.8		A
Allowable Power Dissipation	PD							0.25		W
Channel Temperature	Tch							150		˚C
Storage Temperature	Tstg					–55 to +150				˚C
Electrical Characteristics at Ta = 25˚C
Parameter	Symbol		Conditions			Ratings				Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		50						V
Zero-Gate Voltage Drain Current	IDSS	VDS=50V, VGS=0						10		µA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0						±10		µA
Cutoff Voltage	VGS(off)	VDS=10V, ID=100µA		1				2.4		V
Forward Transfer Admittance	| yfs |	VDS=10V, ID=100mA		0.22		0.31				S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=100mA, VGS=10V				1.8		2.3		Ω
	RDS(on)2	ID=50mA, VGS=4V				2.3		3.2		Ω
Marking : YF						Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60100TS (KOTO) TA-2701 No.6363-1/4

5HN02C

Continued from preceding page.

Parameter					Symbol	Conditions		Ratings		Unit
							min	typ	max
Input Capacitance					Ciss	VDS=10V, f=1MHz		22		pF
Output Capacitance					Coss	VDS=10V, f=1MHz		12		pF
Reverse Transfer Capacitance					Crss	VDS=10V, f=1MHz		4.6		pF
Turn-ON Delay Time					td(on)	See specified Test Circuit		12		ns
Rise Time					tr	See specified Test Circuit		12		ns
Turn-OFF Delay Time					td(off)	See specified Test Circuit		260		ns
Fall Time					tf	See specified Test Circuit		110		ns
Total Gate Charge					Qg	VDS=10V, VGS=10V, ID=200mA		1.86		nC
Gate-to-Source Charge					Qgs	VDS=10V, VGS=10V, ID=200mA		0.28		nC
Gate-to-Drain "Miller" Charge					Qgd	VDS=10V, VGS=10V, ID=200mA		0.45		nC
Diode Forward Voltage					VSD	IS=200mA, VGS=0		0.83	1.2	V
Switching Time Test Circuit
VIN	VDD=25V
10V
0V				ID=100mA
VIN				RL=250Ω
PW=10µs	D			VOUT
D.C.≤ 1%

	G
		5HN02C
P.G	50Ω	S

	0.20									ID -- VDS
												0V
	0.18								0V	4	.		.0V
							6	.					3
						0V
	0.16
A					.
–	0.14				8												2.5V
D	0.12				0V
I				.
Current,			10
	0.10
	0.08
Drain
	0.06
	0.04
	0.02															VGS=2.0V
	0
	0	0.1			0.2				0.3	0.4			0.5	0.6	0.7	0.8	0.9	1.0
					Drain-to-Source Voltage, VDS –											V	IT00250

	6						RDS(on) -- VGS
																			Ta=25°C
Ω	5
–
(on)	4
DS
			ID=50mA
Source-to-DrainStatic Resistance,State-OnR	3
									100mA
	2
	1
	0
	0		1		2		3		4		5		6		7		8		9		10
					Gate-to-Source Voltage, VGS –												V		IT00252

	0.40									ID -- VGS
		VDS=10V
	0.35
A	0.30
–
D	0.25
I
Current,	0.20
Drain	0.15
																°			C			°	C
	0.10														Ta=75						--
	0.05
	0																						25°C
	0		0.5		1.0					1.5				2.0						2.5			3.0					3.5
					Gate-to-Source Voltage, VGS –																		V				IT00251
	10								RDS(on)					-- ID
																								VGS=10V
Ω	7
–
(on)	5
DS
Source-to-DrainStatic Resistance,State-OnR	3
												Ta=75°C
	2												25°C
													--25°C
	1.0
	0.01		2		3				5	7		0.1							2	3			5				7	1.0
								Drain Current, ID –												A							IT00253

No.6363-2/4