Sanyo 5HN01SP Specifications

Page 1
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6639
5HN01SP
N-Channel Silicon MOSFET
5HN01SP
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 0.4 A
Package Dimensions
unit : mm
2180
[5HN01SP]
3.0
1.8
0.6
1.3
0.7
0.4
0.5
0.4
123
1.3
0.7
4.0
3.0
3.8nom
2.2
0.4
1 : Source 2 : Drain 3 : Gate
SANYO : SPA
50 V
±20 V
0.1 A
0.25 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I Gate-to-Sourse Leakage Current I Cutoff Voltage VGS(off) VDS=10V , ID=100µA 1 2.4 V
(BR)DSSID
DSS GSS
=1mA, VGS=0 50 V VDS=50V , VGS=0 10 µA VGS=±16V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Continued on next page.
82200 TS IM TA-2034
No.6639-1/4
Unit
Page 2
5HN01SP
Continued from preceding page.
Parameter Symbol Conditions Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=10V , f=1MHz 6.2 pF
Output Capacitance Coss VDS=10V , f=1MHz 4.4 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 1.5 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 105 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.40 nC Gate Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.21 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 nC Diode Forward Voltage V
yfs
RDS(on)1 ID=50mA, VGS=10V 5.8 7.5 RDS(on)2 ID=30mA, VGS=4V 7.5 10.5
SD
VDS=10V , ID=50mA 85 120 mS
See specified Test Circuit 11 ns
r
See specified Test Circuit 75 ns
f
IS=100mA, VGS=0 0.85 1.2 V
Marking : YC
Switching Time Test Circuit
V
10V
0V
PW=10µs D.C.1%
IN
VDD=25V
D
ID=50mA RL=500
V
OUT
V
IN
Ratings
min typ max
Unit
P.G
0.10
0.08
-- A D
0.06
0.04
Drain Current, I
0.02
0
0
12
11
10
(on) --
DS
9
8
7
6
Static Drain-to-Source
On-State Resistance, R
0.2 0.4 0.6 0.8 1.0
ID=30mA
G
5HN01SP
50
S
I
-- V
D
DS
8.0V
6.0V
4.0V
10.0V
VGS=2.0V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
50mA
3.0V
2.5V
IT00042
Ta=25°C
I
-- V
0.20
0.18
0.16
0.14
-- A
0.12
D
0.10
0.08
0.06
Drain Current, I
0.04
0.02 0
012345
D
GS
Ta= --25°C
75
VDS=10V
25°C
°C
Gate-to-Source V oltage, VGS -- V
100
7 5
3
(on) --
2
DS
10
7 5
3 2
Static Drain-to-Source
On-State Resistance, R
RDS(on) -- I
Ta=75°C
D
VGS=10V
25°C
--25°C
IT00043
012344556
Gate-to-Source V oltage, VGS -- V
78910
IT00044 IT00045
1.0
0.01
23 57 23
0.1
Drain Current, ID -- A
No.6639-2/4
Page 3
100
5HN01SP
RDS(on) -- I
7 5
D
VGS=4V
14
12
RDS(on) -- Ta
3
(on) --
2
DS
10
7 5
3 2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01
1.0 7
5
3 2
0.1 7
5
3 2
Forward Transfer Admittance, yfs -- S
0.01
0.01
1000
7 5
3 2
100
7 5
3 2
10
7 5
Switching Time, SW Time -- ns
3 2
1.0
0.01
10
VDS=10V
9
ID=0.1A
8
-- V
7
GS
6
5
4 3
2
Gate-to-Sourse V oltage, V
1 0
0
0.3
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID -- A
yfs
-- I
0.1
IT00046 IT00047
D
VDS=10V
25°C
Ta= --25°C
°C
75
23 57 23
Drain Current, ID -- A
SW Time -- I
0.1
IT00048 IT00049
D
VDD=25V VGS=10V
td(off)
t
f
t
r
td(on)
23 57
Drain Current, ID -- A
0.1
IT00050
VGS -- Qg
0.6
Total Gate Charge, Qg -- nC
0.9
1.2 1.5
IT00052
10
(on) --
DS
8
6
4
Static Drain-to-Source
On-State Resistance, R
2
0
--60
--40 --20 0 20 40 60 80 100 120 140 160
3
2
0.1
-- A F
7
5
3
Forward Current, I
2
0.01
Diode Forward V oltage, VSD -- V
100
7 5
3 2
10
7 5
3 2
1.0 7
Ciss, Coss, Crss -- pF
5 3
2
0.1
0
5
10 15
0.30
0.25
-- W D
0.20
0.15
0.10
0.05
Allowable Power Dissipation, P
0
0 40 120 1608020 100 14060
=4V
GS
=10V
=30mA, V
I
D
=50mA, V
I
D
GS
Ambient Temperature, Ta -- °C
I
-- V
F
SD
25°C
Ta= 75°C
0.6 0.8 1.0 1.21.10.90.70.50.4
Ciss, Coss, Crss -- V
--25°C
DS
Ciss
Coss
Crss
Drain-to-Source V oltage, VDS -- V
20 25 30 35 40 45 50
PD -- Ta
Ambient Temperature, Ta -- °C
VGS=0
f=1MHz
IT00051
IT02382
No.6639-3/4
Page 4
5HN01SP
Note on usage : Since the 5HN01SP is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice.
PS
No.6639-4/4
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