Sanyo 5HN01N Specifications

Ordering number : ENN6638

5HN01N

N-Channel Silicon MOSFET

5HN01N

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2178

0.45

0.5

0.45

123

5.0

4.0

[5HN01N]

5.0

2.0

0.6

14.0

4.0

0.44

1 : Source
2 : Drain
3 : Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 0.4 A

1.3

1.3

SANYO : NP

50 V

±20 V

0.1 A

0.4 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 1 2.4 V

(BR)DSSID

DSS
GSS

=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2035

No.6638-1/4

Unit

5HN01N

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance
Static Drain-to-Source On-State Resistance

Input Capacitance Ciss VDS=10V , f=1MHz 6.2 pF
Output Capacitance Coss VDS=10V , f=1MHz 4.4 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 1.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 105 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.40 nC
Gate Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.21 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 nC
Diode Forward Voltage V

yfs



RDS(on)1 ID=50mA, VGS=10V 5.8 7.5 Ω
RDS(on)2 ID=30mA, VGS=4V 7.5 10.5 Ω

SD

VDS=10V , ID=50mA 85 120 mS



See specified Test Circuit 11 ns

r

See specified Test Circuit 75 ns

f

IS=100mA, VGS=0 0.85 1.2 V

Marking : YC

Switching Time Test Circuit

Ratings

min typ max

Unit

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

0.10

0.08

-- A
D

0.06

0.04

Drain Current, I

0.02

0

0

12

11

10

(on) -- Ω

DS

9

8

7

6

Static Drain-to-Source

On-State Resistance, R

0.2 0.4 0.6 0.8 1.0

ID=30mA

VDD=25V

I

D

D

S

-- V

8.0V

ID=50mA
RL=500Ω

V

OUT

5HN01N

DS

6.0V

V

IN

G

50Ω

4.0V

10.0V

VGS=2.0V

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

50mA

3.0V

2.5V

IT00042

Ta=25°C

I

-- V

0.20

0.18

0.16

0.14

-- A

0.12

D

0.10

0.08

0.06

Drain Current, I

0.04

0.02
0

012345

D

GS

Ta= --25°C

75

VDS=10V

25°C

°C

Gate-to-Source V oltage, VGS -- V

100

7
5

3

(on) -- Ω

2

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

RDS(on) -- I

Ta=75°C

D

VGS=10V

25°C

--25°C

IT00043

012344556

Gate-to-Source V oltage, VGS -- V

78910

IT00044 IT00045

1.0

0.01

23 57 23

0.1

Drain Current, ID -- A

No.6638-2/4