Sanyo 5HN01M Specifications

Ordering number : ENN6136
5HN01M
N-Channel Silicon MOSFET
5HN01M
Ultrahigh-Speed Switching Applications
Features
Low ON resistance.
Ultrahigh-speed switching.
Package Dimensions
unit : mm
2158
[5HN01M]
0.3
2.1
0.425
1.250
0.425
3
12
0.65
0.65
2.0
0.3 0.6
0.15
0.9
0.2
0 to 0.1
1 : Gate 2 : Source 3 : Drain
Specifications
SANYO : MCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 0.4 A
50 V
±20 V
0.1 A
0.15 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I Gate-to-Sourse Leakage Current I Cutoff Voltage VGS(off) VDS=10V , ID=100µA 1 2.4 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=50mA, VGS=10V 5.8 7.5 RDS(on)2 ID=30mA, VGS=4V 7.5 10.5
=1mA, VGS=0 50 V VDS=50V , VGS=0 10 µA VGS=±16V, VDS=0 ±10 µA
VDS=10V , ID=50mA 85 120 mS
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Unit
90100 TS IM TA-2044
No.6136-1/4
5HN01M
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V, f=1MHz 6.2 pF Output Capacitance Coss VDS=10V, f=1MHz 4.4 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 1.5 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 105 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.40 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.21 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 nC Diode Forward Voltage V
SD
See specified Test Circuit 11 ns
r
See specified Test Circuit 75 ns
f
IS=100mA, VGS=0 0.85 1.2 V
Marking : YC
Switching Time Test Circuit
Ratings
min typ max
Unit
V
10V
0V
PW=10µs D.C.1%
P.G
0.10
0.08
-- A D
0.06
0.04
Drain Current, I
0.02
0
0
12
11
10
(on) --
DS
9
8
7
6
Static Drain-to-Source
On-State Resistance, R
0.2 0.4 0.6 0.8 1.0
ID=30mA
IN
VDD=25V
D
D
S
-- V
8.0V
ID=50mA RL=500
V
OUT
5HN01M
DS
6.0V
V
IN
G
50
I
4.0V
10.0V
VGS=2.0V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
50mA
3.0V
2.5V
IT00042
Ta=25°C
I
-- V
D
0.20
0.18
0.16
0.14
-- A
0.12
D
0.10
0.08
0.06
Drain Current, I
0.04
0.02 0
012345
GS
Ta= --25
VDS=10V
°C
25°C
C
°
75
Gate-to-Source V oltage, VGS -- V
100
7 5
3
(on) --
2
DS
10
7 5
3 2
Static Drain-to-Source
On-State Resistance, R
RDS(on) -- I
Ta=75°C
D
VGS=10V
25°C
--25°C
IT00043
012344556
Gate-to-Source V oltage, VGS -- V
78910
IT00044 IT00045
1.0
0.01
23 57 23
0.1
Drain Current, ID -- A
No.6136-2/4
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