Sanyo 5HN01C Specifications

Ordering number : ENN6637

5HN01C

N-Channel Silicon MOSFET

5HN01C

Ultrahigh-Speed Switching Applications

Features		Package Dimensions
•	Low ON-resistance.	unit : mm
•	Ultrahigh-speed switching.	2091A

• 4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

					[5HN01C]
	0.4			0.5	0.16
	3
					0 to 0.1
				1.5	2.5
1	0.95	0.95	2	0.5
	1.9
	2.9

0.8

1.1

1 : Gate

2 : Source

3 : Drain

SANYO : CP

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		50	V
Gate-to-Source Voltage	VGSS		±20	V
Drain Current (DC)	ID		0.1	A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%	0.4	A
Allowable Power Dissipation	PD		0.25	W
Channel Temperature	Tch		150	°C
Storage Temperature	Tstg		--55 to +150	°C

Electrical Characteristics at Ta=25°C

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		50			V
Zero-Gate Voltage Drain Current	IDSS	VDS=50V, VGS=0				10	mA
Gate-to-Sourse Leakage Current	IGSS	VGS=±16V, VDS=0				±10	mA
Cutoff Voltage	VGS(off)	VDS=10V, ID=100mA		1		2.4	V
Forward Transfer Admittance	yfs	V	=10V, I =50mA	85	120		mS
	½ ½	DS	D
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=50mA, VGS=10V			5.8	7.5	W
	RDS(on)2	ID=30mA, VGS=4V			7.5	10.5	W

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2041 No.6637-1/4

5HN01C

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=10V, f=1MHz		6.2		pF
Output Capacitance	Coss	VDS=10V, f=1MHz		4.4		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz		1.5		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		10		ns
Rise Time	tr	See specified Test Circuit		11		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		105		ns
Fall Time	tf	See specified Test Circuit		75		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=100mA		1.40		nC
Gate Source Charge	Qgs	VDS=10V, VGS=10V, ID=100mA		0.21		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=10V, VGS=10V, ID=100mA		0.34		nC
Diode Forward Voltage	VSD	IS=100mA, VGS=0		0.85	1.2	V

Marking : YC

Switching Time Test Circuit

VIN	VDD=25V
10V
0V	VIN		ID=50mA
PW=10µs			RL=500Ω
	D		VOUT
D.C.≤ 1%

	G
	5HN01C
P.G	50Ω
	S

	0.10				ID -- VDS
							.0V
						8
							.0V
							6
	0.08						.0V	0V
							4	3
A				.	0V
--			10
D	0.06
I
Current,	0.04							2.5V
Drain
	0.02
								VGS=2.0V
	0
	0	0.2			0.4		0.6	0.8	1.0

					Drain-to-Source Voltage, VDS													-- V			IT00042
	12						RDS(on) -- VGS
																					Ta=25°C
Ω	11
--
(on)	10
DS	9
SourceDrainStatic-to- Resistance,StateOn-R										50mA
	8
					ID=30mA
	7
	6
	5
	4
	0		1		2		3		4			5		6		7		8		9			10
					Gate-to-Source Voltage, VGS													-- V			IT00044

	0.20
	0.18
	0.16
A	0.14
--
D	0.12
I
Current,	0.08
	0.10
Drain	0.06
	0.04
	0.02
	0
	0
	100
Ω	7
	5
--
(on)	3
DS	2
DrainStatic-to-Source State-OnResistance, R
	2
	10
	7
	5
	3
	1.0
	0.01

ID -- VGS

			VDS=10V
	C	C
	°	°
	25	25
Ta=	--	C
		°
		75

1	2	3	4	5
Gate-to-Source Voltage, VGS -- V				IT00043
	RDS(on)	--	ID

VGS=10V

Ta=75°C

25°C

--25°C

2	3	5	7	0.1	2	3
	Drain Current, ID			-- A	IT00045
					No.6637-2/4