Sanyo 5HN01C Specifications

Ordering number : ENN6637

5HN01C

N-Channel Silicon MOSFET

5HN01C

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2091A

[5HN01C]

0.4

3

0.95

0.95

1

1.9

2.9

0.5

2.5

1.5

2

0.5

0.16

0 to 0.1

1 : Gate

0.8

1.1

2 : Source
3 : Drain

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 0.4 A

SANYO : CP

50 V

±20 V

0.1 A

0.25 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 1 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=50mA, VGS=10V 5.8 7.5 Ω
RDS(on)2 ID=30mA, VGS=4V 7.5 10.5 Ω

=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=50mA 85 120 mS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2041

No.6637-1/4

Unit

5HN01C

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 6.2 pF
Output Capacitance Coss VDS=10V , f=1MHz 4.4 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 1.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 105 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.40 nC
Gate Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.21 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 nC
Diode Forward Voltage V

SD

See specified Test Circuit 11 ns

r

See specified Test Circuit 75 ns

f

IS=100mA, VGS=0 0.85 1.2 V

Marking : YC

Switching Time Test Circuit

Ratings

min typ max

Unit

V

10V

0V

PW=10µs
D.C.≤1%

P.G

0.10

0.08

-- A
D

0.06

0.04

Drain Current, I

0.02

0

0

12

11

10

(on) -- Ω

DS

9

8

7

6

Static Drain-to-Source

On-State Resistance, R

0.2 0.4 0.6 0.8 1.0

ID=30mA

IN

VDD=25V

D

D

S

-- V

8.0V

ID=50mA
RL=500Ω

V

OUT

5HN01C

DS

6.0V

V

IN

G

50Ω

I

4.0V

10.0V

VGS=2.0V

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

50mA

3.0V

2.5V

IT00042

Ta=25°C

I

-- V

0.20

0.18

0.16

0.14

-- A

0.12

D

0.10

0.08

0.06

Drain Current, I

0.04

0.02
0

012345

D

GS

Ta= --25°C

75

VDS=10V

25°C

°C

Gate-to-Source V oltage, VGS -- V

100

7
5

3

(on) -- Ω

2

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

RDS(on) -- I

Ta=75°C

D

VGS=10V

25°C

--25°C

IT00043

012344556

Gate-to-Source V oltage, VGS -- V

78910

IT00044 IT00045

1.0

0.01

23 57 23

0.1

Drain Current, ID -- A

No.6637-2/4

100

5HN01C

RDS(on) -- I

7
5

D

VGS=4V

14

12

RDS(on) -- Ta

3

(on) -- Ω

2

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

1.0

0.01

1.0
7

5

3
2

0.1
7

5

3
2

Forward Transfer Admittance, yfs -- S

0.01

0.01

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time -- ns

3
2

1.0

0.01

10

VDS=10V

9

ID=0.1A

8

-- V

7

GS

6

5

4
3

2

Gate-to-Sourse V oltage, V

1
0

0

0.3

Ta=75°C

25°C

--25°C

23 57 23

Drain Current, ID -- A

yfs





-- I

0.1

IT00046 IT00047

D

VDS=10V

25°C

Ta= --25°C

°C

75

23 57 23

Drain Current, ID -- A

SW Time -- I

0.1

IT00048 IT00049

D

VDD=25V
VGS=10V

td(off)

t

f

t

r

td(on)

23 57

Drain Current, ID -- A

0.1

IT00050

VGS -- Qg

0.6

Total Gate Charge, Qg -- nC

0.9

1.2 1.5

IT00052

10

(on) -- Ω

DS

8

6

4

Static Drain-to-Source

On-State Resistance, R

2

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

3

2

0.1

-- A
F

7

5

3

Forward Current, I

2

0.01

Diode Forward V oltage, VSD -- V

100

7
5

3
2

10

7
5

3
2

1.0
7

Ciss, Coss, Crss -- pF

5
3

2

0.1

0

5

10 15

0.30

0.25

-- W
D

0.20

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0 40 120 1608020 100 14060

=4V

GS

=10V

=30mA, V

I

D

=50mA, V

I

D

GS

Ambient Temperature, Ta -- °C

I

-- V

F

SD

25°C

Ta= 75°C

0.6 0.8 1.0 1.21.10.90.70.50.4

Ciss, Coss, Crss -- V

--25°C

DS

Ciss

Coss

Crss

Drain-to-Source V oltage, VDS -- V

20 25 30 35 40 45 50

PD -- Ta

Ambient Temperature, Ta -- °C

VGS=0

f=1MHz

IT00051

IT02382

No.6637-3/4

5HN01C

Note on usage : Since the 5HN01C is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.

PS

No.6637-4/4