Sanyo 3SK248 Specifications

Ordering number:ENN4540

N-Channel Enhancement Silicon MOSFET

3SK248

Muting/Switching Applications

Features

·MOSFET with a back gate terminal.

·Enhancement type.

·Small ON resistance.

·Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer.

Specifications

Package Dimensions

unit:mm

2100A

[3SK248]

1.9

0.95	0.95
0.4	0.5
4	3

1.5

2.5

1	2	0.6	0.5
0.95	0.85
2.9

0.8

1.1

0.16

0 to 0.1

1 : Gate

2 : Source

3 : Drain

4 : Back Gate

SANYO : CP4

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		10	V
Gate-to-Source Voltage	VGSS		±10	V
Drain Current (DC)	ID		100	mA
Allowable Power Dissipation	PD		200	mW
Channel Temperature	Tch		125	˚C
Storage Temperature	Tstg		–55 to +125	˚C

Electrical Characteristics at Ta = 25˚C

	Parameter	Symbol	Conditions		Ratings		Unit
				min	typ	max
	Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=10µA, VGS=0V	10			V
	Gate-to-Source Breakdown Voltage	VGSS	IG=±10µA, VDS=0V	±10			V
	Zero-Gate Voltage Drain Current	IDSS	VDS=5V, VGS=0V			1	µA
	Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0V		±0.01	±50	nA
	Cutoff Voltage	VGS(off)	VDS=5V, ID=100µA	0.3		1.5	V
	Forward Transfer Admittance	| yfs |	VDS=5V, ID=50mA, f=1kHz		80		mS
	Input Capacitance	Ciss	VDS=5V, VGS=0V, f=1MHz		50		pF
	Output Capacitance	Coss	VDS=5V, VGS=0V, f=1MHz		10		pF
	Reverse Transfer Capacitance	Crss	VDS=5V, VGS=0V, f=1MHz		5		pF
	Marking : NJ				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82599TH (KT)/41894HO (KOTO) AX-7919 No.4540–1/3

3SK248

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Static Drain-to-Source ON-State Resistance	RDS(on)1	VGS=5V, ID=50mA		5	7	Ω
	RDS(on)2	VGS=2.5V, ID=15mA		7	12	Ω

Electrical Connection

No.4540–2/3