Sanyo 3LP02SP Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6554

3LP02SP

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.0

0.4

0.5

0.4

0.6

15.0

3.0

1.8

123

2.2

0.4

1.3

1.3

3.0

3.8nom

0.7

0.7

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : XD Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %18.0–A

PD

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01–=

1)no(IDV,Am001–=

2)no(IDV,Am05–=

3)no(IDV,Am01–=

Package Dimensions

unit:mm

2180

[3LP02SP]

1 : Source
2 : Drain
3 : Gate
SANYO : SPA

03–V
01±V

2.0–A

52.0W

˚C
˚C

sgnitaR

nimpytxam

V,Am1–=

0=03–V

SG

V,V03–=

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

Aµ001–=4.0–4.1–V

D
D

Am001–=12.03.0S

V4–=4.21.3

SG

V5.2–=5.39.4

SG

V5.1–=0102

SG

tinU

Ω
Ω
Ω

81000TS (KOTO) TA-2009 No.6554-1/4

3LP02SP

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

d

r

d

f

DS

SD
SD
SD

)no(tiucriCtseTdeificepseeS42sn

)ffo(tiucriCtseTdeificepseeS002sn

I

S

Switching Time Test Circuit

zHM1=f,V01–=82Fp
zHM1=f,V01–=51Fp
zHM1=f,V01–=2.5Fp

tiucriCtseTdeificepseeS57sn

tiucriCtseTdeificepseeS051sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

V,Am002–=

0=28.0–2.1–V

SG

sgnitaR

nimpytxam

D
D
D

Am002–=2Cn
Am002–=52.0Cn
Am002–=53.0Cn

tinU

--0.20

--0.18

--0.16

--0.14

–A

D

--0.12

--0.10

--0.08

--0.06

Drain Current, I

--0.04

--0.02

– Ω

(on)

DS

V

IN

0V

--4V
PW=10µs

D.C.≤1%

P.G

--6.0V

0

0

--0 .2

Drain-to-Source Voltage, VDS–V

7

6

5

ID= --100mA

--50mA

VDD= --15V

I

D

--4.0V

ID= --100mA
RL=150Ω

D

S

-- V

--3.0V

V

3LP02SP

DS

OUT

V

IN

G

50Ω

--3.5V

--2.5V

--2.0V

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

RDS(on) -- V

GS

I

-- V

--0.40

--0.35

--0.30

–A

--0.25

D

--0.20

--0.15

Drain Current, I

VGS= --1.5V

IT00237 IT00238

Ta=25°C

--0.10

--0.05

0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5

Gate-to-Source Voltage, VGS–V

10

7

D

RDS(on) -- I

GS

Ta= --25

°C

75°C

D

– Ω

5

(on)

DS

3

Ta=75°C

VDS= --10V

25°C

VGS= --4V

25°C

2

--25°C

Static Drain-to-Source

On-State Resistance, R

00--11--22--33--44--5

Gate-to-Source Voltage, VGS–V

--68--7 --8 --9 --10

IT00239 IT00240

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01 --0.1

23 57 23 5

Drain Current, ID–A

No.6554-2/4