Sanyo 3LP02N Specifications

Ordering number:ENN6553

P-Channel Silicon MOSFET

3LP02N

Ultrahigh-Speed Switching Applications

	Features	Package Dimensions
	· Low ON-resistance.	unit:mm
	· Ultrahigh-speed switching.	2178
	· 2.5V drive.

	5.0		[3LP02N]
				4.0
	4.0
			5.0
0.45
0.5
0.45		0.6	2.0	0.44
			14.0
1	2	3		1 : Source

			2	: Drain
Specifications			3	: Gate
	1.3	1.3	SANYO : NP

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		–30	V
Gate-to-Source Voltage	VGSS		±10	V
Drain Current (DC)	ID		–0.2	A
Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%	–0.8	A
Allowable Power Dissipation	PD		0.4	W
Channel Temperature	Tch		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=–1mA, VGS=0	–30			V
Zero-Gate Voltage Drain Current	IDSS	VDS=–30V, VGS=0			–10	µA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0			±10	µA
Cutoff Voltage	VGS(off)	VDS=–10V, ID=–100µA	–0.4		–1.4	V
Forward Transfer Admittance	| yfs |	VDS=–10V, ID=–100mA	0.21	0.3		S
	RDS(on)1	ID=–100mA, VGS=–4V		2.4	3.1	Ω
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=–50mA, VGS=–2.5V		3.5	4.9	Ω
	RDS(on)3	ID=–10mA, VGS=–1.5V		10	20	Ω
Marking : XD				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

81000TS (KOTO) TA-2010 No.6553-1/4

3LP02N

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=–10V, f=1MHz		28		pF
Output Capacitance	Coss	VDS=–10V, f=1MHz		15		pF
Reverse Transfer Capacitance	Crss	VDS=–10V, f=1MHz		5.2		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		24		ns
Rise Time	tr	See specified Test Circuit		75		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		200		ns
Fall Time	tf	See specified Test Circuit		150		ns
Total Gate Charge	Qg	VDS=–10V, VGS=–10V, ID=–200mA		2		nC
Gate-to-Source Charge	Qgs	VDS=–10V, VGS=–10V, ID=–200mA		0.25		nC
Gate-to-Drain "Miller" Charge	Qgd	VDS=–10V, VGS=–10V, ID=–200mA		0.35		nC
Diode Forward Voltage	VSD	IS=–200mA, VGS=0		–0.82	–1.2	V

Switching Time Test Circuit

	VIN	VDD= --15V
	0V
	--4V	VIN	ID= --100mA
	PW=10µs		RL=150Ω
		D	VOUT
	D.C.≤ 1%
		G
			3LP02N
	P.G	50Ω	S

ID -- VDS

--0.20

		--0.18
		--0.16
	A	--0.14
	–
	D	--0.12
	I
	Current,	--0.10
	Drain	--0.08
		--0.06
		--0.04

--	6	.	0V

--	4	.	0V

3.0V --

.5V --2

--3.5V

	.0V
2
--

VGS= --1.5V

--0.02
	0
	0	--0.1	--0.2		--0.3 --0.4 --0.5		--0.6		--0.7		--0.8		--0.9			--1.0
			Drain-to-Source Voltage, VDS –								V			IT00237
	8				RDS(on) -- VGS
														Ta=25°C
Ω	7
–	6
(on)	5
DS
					ID= --100mA
DrainStatic-to-Source Resistance,State-On R
	1
	4	--50mA
	3
	2
	0
	0	--1	--2		--3 --4 --5		--6		--7		--8		--9			--10
			Gate-to-Source Voltage, VGS –								V			IT00239

	--0.40
	--0.35
A	--0.30
–	--0.25
D
I
Current,	--0.20
Drain	--0.15
	--0.10
	--0.05
		0
		0
		10
Ω		7
	–
	(on)	5
Source-to-DrainStatic	DS
	Resistance,State-On R	3
		2
		1.0
		--0.01

ID -- VGS

					VDS= --10V
	C			C
	°
	25			°
				25
Ta=	--
		°	C
		75

--0.5	--1.0	--1.5	--2.0	--2.5	--3.0	--3.5
	Gate-to-Source Voltage, VGS –				V	IT00238

RDS(on) -- ID

VGS= --4V

Ta=75°C

25°C

--25°C

2	3	5	7 --0.1	2	3	5
		Drain Current, ID – A				IT00240

No.6553-2/4