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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6127
3LP02M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : XD Continued on next page.
SSD
SSG
D
R
R
R
WP ≤ elcycytud,sµ01 ≤ %18.0–A
PD
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1I
)no(SD
2I
)no(SD
3I
)no(SD
SD
V
SG
V
SD
D
D
D
Package Dimensions
unit:mm
2158
[3LP02M]
0.3
0.425
2.1
1.250
0.425
V,Am1–=
0=03–V
SG
V,V03–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
V,Am05–=
V,Am01–=
Aµ001–=4.0–4.1–V
D
D
V,Am001–=
Am001–=12.03.0S
V4–=4.21.3
SG
V5.2–=5.39.4
SG
V5.1–=0102
SG
12
0.65
0.65
2.0
3
0.15
0.3 0.6
0.9
nimpytxam
0.2
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
03–V
01±V
2.0–A
51.0W
sgnitaR
˚C
˚C
tinU
Ω
Ω
Ω
D1099TS (KOTO) TA-1852 No.6127-1/4
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3LP02M
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01–=82Fp
zHM1=f,V01–=51Fp
zHM1=f,V01–=2.5Fp
tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS57sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS051sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,Am002–=
0=28.0–2.1–V
SG
sgnitaR
nimpytxam
D
D
D
Am002–=2Cn
Am002–=52.0Cn
Am002–=53.0Cn
tinU
--0.20
--0.18
--0.16
--0.14
–A
D
--0.12
--0.10
--0.08
--0.06
Drain Current, I
--0.04
--0.02
– Ω
DS(on)
0
7
6
5
0
V
IN
G
50Ω
VDD=--15V
D
I
-- V
D
ID=--100mA
RL=150Ω
S
0V
--4V
PW=10µs
D.C.≤1%
P.G
V
IN
--4.0V
--6.0V
--2.5V
--0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
ID=--100mA
--50mA
3LP02M
DS
--3.0V
V
OUT
--3.5V
--2.0V
GS
--0.40
--0.35
D
GS
I
-- V
°C
--0.30
–A
--0.25
D
--0.20
--0.15
Drain Current, I
VGS=--1.5V
IT00237 IT00238
Ta=25°C
--0.10
--0.05
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5
Gate-to-Source Voltage, VGS–V
RDS(on) -- I
– Ω
DS(on)
10
7
5
3
Ta=--25
Ta=75°C
75°C
D
25°C
2
--25°C
VDS=--10V
25°C
VGS=--4V
Static Drain-to-Source
On-State Resistance, R
00--11--22--33--44--5
Gate-to-Source Voltage, V
--68--7 --8 --9 --10
GS
–V
IT00239 IT00240
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
23 57 23 57
Drain Current, ID–A
--0.1
--1.0
No.6127-2/4