Sanyo 3LP01SP Specifications

Ordering number : ENN6647

3LP01SP

P-Channel Silicon MOSFET

3LP01SP

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --0.4 A

Package Dimensions

unit : mm

2180

[3LP01SP]

4.0

0.4

0.5

0.4

123

1.3

0.7

3.0

3.8nom

1.8

0.6

1.3

0.7

2.2

3.0

15.0

0.4

1 : Source
2 : Drain
3 : Gate

SANYO : SPA

--30 V

±10 V

--0.1 A

0.25 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--50mA 80 110 mS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

90100 TS IM TA-2003

No.6647-1/4

Unit

3LP01SP

Continued from preceding page.

Parameter Symbol Conditions

RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω

RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ω
Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF
Output Capacitance Coss VDS=--10V, f=1MHz 5.7 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.8 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 120 ns
Fall Time t
Total Gate Charge Qg
Gate-to-Source Charge Qgs
Gate-to-Drain “Miller” Charge Qgd
Diode Forward Voltage V

SD

See specified Test Circuit 55 ns

r

See specified Test Circuit 130 ns

f

VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
IS=--100mA, VGS=0 0.83 1.2 V

Marking : XA

Switching Time Test Circuit

V

IN

VDD= --15V

ID= --50mA
RL=300Ω

D

V

OUT

V

0V

--4V
PW=10µs

D.C.≤1%

IN

Ratings

min typ max

1.43 nC

0.18 nC

0.25 nC

Unit

--0.10

--0.09

--0.08

--0.07

-- A
D

--0.06

--0.05

--0.04

--0.03

Drain Current, I

--0.02

--0.01
0

25

(on) -- Ω

20

DS

15

--3.5V

0

--0.4

ID=30mA

Static Drain-to-Source

On-State Resistance, R

G

3LP01SP

S

I

-- V

--0.20

--0.18

--2.0V

VGS= --1.5V

IT00077 IT00078

Ta=25°C

--0.16

--0.14

-- A
D

--0.12

--0.10

--0.08

--0.06

Drain Current, I

--0.04

--0.02
0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5

100

7
5

3

(on) -- Ω

2

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

D

RDS(on) -- I

Ta=75°C

--25°C

GS

°C

Ta= --25

75°C

D

25°C

--4.0V

P.G

I

D

-- V

--3.0V

50Ω

DS

--2.5V

--6.0V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

Drain-to-Source V oltage, VDS -- V Gate-to-Source Voltage, VGS -- V

RDS(on) -- V

GS

50mA

VDS= --10V

25°C

VGS= --4V

00--1 --2 --35--410--5

Gate-to-Source V oltage, VGS -- V

--630--7 --8 --9 --10

IT00079 IT00080

1.0

--0.01

23 57 23

--0.1

Drain Current, ID -- A

No.6647-2/4

100

7
5

3

(on) -- Ω

2

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

14

(on) -- Ω

12

DS

10

8

Static Drain-to-Source

On-State Resistance, R

4

2

--60

--406--20

3

2

RDS(on) -- I

D

Ta=75°C

--25°C

Drain Current, ID -- A

--0.1

RDS(on) -- Ta

= --2.5V

GS

= --30mA, V

I

D

= --50mA, V

I

D

0

20 4016601880 100 120 140 160

Ambient Temperature, Ta -- °C

I

F

-- V

= --4.0V

GS

SD

3LP01SP

VGS= --2.5V

25°C

327532

IT00081 IT00082

1000

7
5

3

(on) -- Ω

2

DS

100

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

10

--0.1 --1.0

1.0
7

5

3
2

0.1
7

5

3
2

RDS(on) -- I

Ta=75°C

--25°C

Drain Current, ID -- mA

yfs -- I

Ta= --25°C

75°C

Forward Transfer Admittance, yfs -- S

0.01

1000

--0.01

Drain Current, ID -- A

SW Time -- I

7
5

IT00083

VGS=0

D

25°C

D

--0.1

D

VGS= --1.5V

2323 57

VDS= --10V

25°C

327532

IT00084

VDD= --15V
VGS= --4V

--0.1

-- A
F

7

5

3

Forward Current, I

2

--0.01

--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1

°C

Ta=75

25°C

--25°C

Diode Forward V oltage, VSD -- V

Ciss, Coss, Crss -- pF

100

1.0

Ciss, Coss, Crss -- V

7
5

3
2

10

7
5

3
2

--5

--10 --15

0

DS

Ciss
Coss

Crss

--20 --30--25

Drain-to-Source V oltage, VDS -- V

IT00085

f=1MHz

IT00087

3
2

100

7
5

3

Switching Time, SW Time -- ns

2

10

--0.01

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Sourse V oltage, V

--1
0

0

VDS= --10V
ID= --0.1A

t

f

td(off)

t

r

td(on)

23 57

Drain Current, ID -- A

VGS -- Qg

Total Gate Charge, Qg -- nC

No.6647-3/4

--0.1

IT00086

1.60.6 0.8 1.0 1.2 1.40.2 0.4

IT00088

0.30

0.25

-- W
D

0.20

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0 40 120 1608020 100 14060

P

-- Ta

D

Ambient Temperature, Ta -- °C

3LP01SP

IT02382

Note on usage : Since the 3LP01SP is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2000. Specifications and information herein are subject
to change without notice.

PS

No.6647-4/4