Sanyo 3LP01S Specifications
Ordering number : ENN6681
3LP01S
P-Channel Silicon MOSFET
3LP01S
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2192
[3LP01S]
0.2
0.3
3
1
0.5 0.5
1.6
0.4
0.8
2
0.4
1.6
0.75
0.6
0.1
0 to 0.1
0.1max
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.4 A
--30 V
±10 V
--0.1 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance | yfs | VDS=--10V, ID=--50mA 80 110 mS
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω
RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω
RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ω
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-2005
No.6681-1/4
Unit
3LP01S
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF
Output Capacitance Coss VDS=--10V, f=1MHz 5.7 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.8 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 120 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--100mA 0.18 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA 0.25 nC
Diode Forward Voltage V
SD
See specified Test Circuit 55 ns
r
See specified Test Circuit 130 ns
f
IS=--100mA, VGS=0 --0.83 --1.2 V
Marking : XA
Switching Time Test Circuit
Ratings
min typ max
Unit
V
0V
--4V
PW=10µs
D.C.≤1%
P.G
--0.10
--0.09
--0.08
--0.07
-- A
D
--0.06
--0.05
--0.04
--0.03
Drain Current, I
--0.02
--0.01
0
0
25
(on) -- Ω
20
DS
15
ID= --30mA
V
IN
G
50Ω
VDD= --15V
ID= --50mA
RL=300Ω
D
S
I
-- V
D
V
OUT
3LP01S
DS
IN
--3.5V
--2.5V
--4.0V
--3.0V
--6.0V
--0.4
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
--50mA
--2.0V
VGS= --1.5V
IT00077
Ta=25
°C
I
-- V
--0.20
VDS= --10V
--0.18
--0.16
--0.14
-- A
D
--0.12
--0.10
--0.08
--0.06
Drain Current, I
--0.04
--0.02
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
D
GS
Ta= --25°C
75
°C
Gate-to-Source V oltage, VGS -- V
100
7
5
3
(on) -- Ω
2
DS
10
7
5
RDS(on) -- I
Ta=75°C
--25°C
D
25
25°C
°C
IT00078
VGS= --4V
Static Drain-to-Source
On-State Resistance, R
00--1 --2 --35--410--5
Gate-to-Source V oltage, VGS -- V
--630--7 --8 --9 --10
3
Static Drain-to-Source
On-State Resistance, R
2
1.0
IT00079 IT00080
--0.01
23 57 23
--0.1
Drain Current, ID -- A
No.6681-2/4
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