Sanyo 3LP01S Specifications

Ordering number : ENN6681

3LP01S

P-Channel Silicon MOSFET

3LP01S

Ultrahigh-Speed Switching Applications

Features		Package Dimensions
•	Low ON-resistance.	unit : mm
•	Ultrahigh-speed switching.	2192

• 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

		[3LP01S]
		0.4	0.75
0.3			0.6
3			0 to 0.1
		0.8
			1.6
0.2 1	2	0.4	0.1
0.5 0.5			0.1max
	1.6

1 : Gate

2 : Source

3 : Drain

SANYO : SMCP

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS						--30	V
Gate-to-Source Voltage	VGSS						±10	V
Drain Current (DC)	ID						--0.1	A
Drain Current (Pulse)	IDP	PW≤10μs, duty cycle≤1%					--0.4	A
Allowable Power Dissipation	PD						0.15	W
Channel Temperature	Tch						150	°C
Storage Temperature	Tstg				--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--30					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0					--10	μA
Gate-to-Sourse Leakage Current	IGSS	VGS=±8V, VDS=0					±10	μA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--100μA	--0.4				--1.4	V
Forward Transfer Admittance	| yfs |	VDS=--10V, ID=--50mA	80		110			mS
	RDS(on)1	ID=--50mA, VGS=--4V			8		10.4	Ω
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=--30mA, VGS=--2.5V			11		15.4	Ω
	RDS(on)3	ID=--1mA, VGS=--1.5V			27		54	Ω

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12201 TS IM TA-2005 No.6681-1/4

3LP01S

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=--10V, f=1MHz		7.5		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz		5.7		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz		1.8		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		24		ns
Rise Time	tr	See specified Test Circuit		55		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		120		ns
Fall Time	tf	See specified Test Circuit		130		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--100mA		1.43		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--100mA		0.18		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--100mA		0.25		nC
Diode Forward Voltage	VSD	IS=--100mA, VGS=0		--0.83	--1.2	V

Marking : XA

Switching Time Test Circuit

VIN	VDD= --15V
0V
--4V	VIN		ID= --50mA
PW=10µs			RL=300Ω
	D		VOUT
D.C.≤ 1%

	G
	3LP01S
P.G	50Ω
	S

	--0.10															ID -- VDS
																					.5V
						--3.5V									0V
	--0.09													.							2
													4							.0V	--
											--
	--0.08																	--	3								2.0V
A								0V																		--
	--0.07
--						.
						6
D	--0.06					--
I
Current,	--0.04
Drain	--0.05
	--0.03
	--0.02																							VGS= --1.5V
	--0.01
	0
	0		--0.2			--0.4					--0.6					--0.8 --1.0 --1.2 --1.4								--1.6		--1.8		--2.0
							Drain-to-Source Voltage, VDS																	-- V		IT00077
	30											RDS(on) -- VGS
																										Ta=25°C
Ω
--	25
(on)
DS	20
Source-to-DrainStatic Resistance,State-On R	15
												--	50mA
	10			ID=	--30mA
	5
	0
	0		--1				--2				--3					--4 --5 --6 --7								--8		--9		--10
								Gate-to-Source Voltage, VGS																-- V		IT00079

	--0.20						ID -- VGS
	--0.18		V	DS= --10V
	--0.16
												C
A											°						25°C
--	--0.14									--	25
									Ta=
D--0.12
I															C
Current,
	--0.08											75	°
	--0.10
Drain	--0.06
	--0.04
	--0.02
	0
	0		--0.5 --1.0 --1.5 --2.0 --2.5													--3.0			--3.5 --4.0
					Gate-to-Source Voltage, VGS											-- V				IT00078

		100		RDS(on)		--	ID
								VGS= --4V
		7
	Ω	5
	--
	(on)	3
	DS	2
Static Drain-to-Source	On-State Resistance, R			Ta=75°C			25°C
		10
		7		--25°C
		5
		3
		2
		1.0	2	3	5	7		2	3
		--0.01					--0.1
				Drain Current, ID			-- A	IT00080
								No.6681-2/4