Page 1
Ordering number : ENN6681
3LP01S
P-Channel Silicon MOSFET
3LP01S
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2192
[3LP01S]
0.2
0.3
3
1
0.5 0.5
1.6
0.4
0.8
2
0.4
1.6
0.75
0.6
0.1
0 to 0.1
0.1max
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.4 A
--30 V
±10 V
--0.1 A
0.15 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance | yfs | VDS=--10V, ID=--50mA 80 110 mS
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω
RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω
RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ω
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-2005
No.6681-1/4
Unit
Page 2
3LP01S
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF
Output Capacitance Coss VDS=--10V, f=1MHz 5.7 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.8 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 120 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--100mA 0.18 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA 0.25 nC
Diode Forward Voltage V
SD
See specified Test Circuit 55 ns
r
See specified Test Circuit 130 ns
f
IS=--100mA, VGS=0 --0.83 --1.2 V
Marking : XA
Switching Time Test Circuit
Ratings
min typ max
Unit
V
0V
--4V
PW=10µs
D.C.≤1%
P.G
--0.10
--0.09
--0.08
--0.07
-- A
D
--0.06
--0.05
--0.04
--0.03
Drain Current, I
--0.02
--0.01
0
0
25
(on) -- Ω
20
DS
15
ID= --30mA
V
IN
G
50Ω
VDD= --15V
ID= --50mA
RL=300Ω
D
S
I
-- V
D
V
OUT
3LP01S
DS
IN
--3.5V
--2.5V
--4.0V
--3.0V
--6.0V
--0.4
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
--50mA
--2.0V
VGS= --1.5V
IT00077
Ta=25
°C
I
-- V
--0.20
VDS= --10V
--0.18
--0.16
--0.14
-- A
D
--0.12
--0.10
--0.08
--0.06
Drain Current, I
--0.04
--0.02
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
D
GS
Ta= --25°C
75
°C
Gate-to-Source V oltage, VGS -- V
100
7
5
3
(on) -- Ω
2
DS
10
7
5
RDS(on) -- I
Ta=75°C
--25°C
D
25
25°C
°C
IT00078
VGS= --4V
Static Drain-to-Source
On-State Resistance, R
00--1 --2 --35--410--5
Gate-to-Source V oltage, VGS -- V
--630--7 --8 --9 --10
3
Static Drain-to-Source
On-State Resistance, R
2
1.0
IT00079 IT00080
--0.01
23 57 23
--0.1
Drain Current, ID -- A
No.6681-2/4
Page 3
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
Static Drain-to-Source
On-State Resistance, R
2
RDS(on) -- I
Ta=75°C
25°C
--25°C
D
VGS= --2.5V
3LP01S
1000
7
5
3
(on) -- Ω
2
DS
100
7
5
3
Static Drain-to-Source
On-State Resistance, R
2
RDS(on) -- I
Ta=75°C
--25°C
D
VGS= --1.5V
25°C
1.0
--0.01
--0.1
Drain Current, ID -- A Drain Current, ID -- mA
RDS(on) -- Ta
14
(on) -- Ω
DS
12
= --30mA, V
--406--20
I
D
I
= --50mA, V
D
0
10
8
Static Drain-to-Source
On-State Resistance, R
4
2
--60
Ambient Temperature, Ta -- °C
3
2
--0.1
-- A
F
7
5
3
Forward Current, I
2
Ta=75°C
--0.01
--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- V
--5
--10 --15
Ciss, Coss, Crss -- pF
100
1.0
7
5
3
2
10
7
5
3
2
0
Drain-to-Source V oltage, VDS -- V
= --2.5V
GS
= --4.0V
GS
20 4016601880 100 120 140 160
I
-- V
F
SD
25°C
--25°C
--20 --30--25
DS
V
GS
f=1MHz
Ciss
Coss
Crss
IT00081
IT00083
= 0
IT00085
IT00087
327532
10
--0.1 --1.0
yfs
-- I
1.0
7
5
3
2
0.1
7
5
3
2
25°C
Ta= --25°C
75°C
D
2323 57
IT00082
VDS= --10V
Forward Transfer Admittance, yfs -- S
0.01
1000
--0.01
7
5
3
2
Drain Current, ID -- A
--0.1
SW Time -- I
t
f
D
VDD= --15V
VGS= --4V
327532
IT00084
td(off)
100
7
5
3
Switching Time, SW Time -- ns
2
10
--0.01
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Sourse V oltage, V
--1
0
0
23 57
Drain Current, ID -- A
VGS -- Qg
VDS= --10V
ID= --0.1A
Total Gate Charge, Qg -- nC
td(on)
t
r
--0.1
IT00086
1.60.6 0.8 1.0 1.2 1.40.2 0.4
IT00088
No.6681-3/4
Page 4
PD -- Ta
-- W
D
0.20
0.15
0.10
0.05
Allowable Power Dissipation, P
0
20 40 60 80
0
Ambient Temperature, Ta -- °C
100
120 140 160
3LP01S
IT02381
Note on usage : Since the 3LP01S is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
No.6681-4/4
PS
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