Sanyo 3LP01C Specifications
Ordering number : ENN6645
3LP01C
P-Channel Silicon MOSFET
3LP01C
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2091A
[3LP01C]
0.4
3
0.95
0.95
1
1.9
2.9
0.5
1.5
2
0.5
0.16
0 to 0.1
2.5
1 : Gate
2 : Source
3 : Drain
1.1
0.8
SANYO : CP
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.4 A
--30 V
±10 V
--0.1 A
0.25 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--50mA 80 110 mS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-1982
No.6645-1/4
Unit
3LP01C
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω
RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ω
Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF
Output Capacitance Coss VDS=--10V, f=1MHz 5.7 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.8 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 120 ns
Fall Time t
Total Gate Charge Qg
Gate-to-Source Charge Qgs
Gate-to-Drain “Miller” Charge Qgd
Diode Forward Voltage V
SD
See specified Test Circuit 55 ns
r
See specified Test Circuit 130 ns
f
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
IS=--100mA, VGS=0 0.83 1.2 V
Marking : XA
Switching Time Test Circuit
V
IN
VDD= --15V
ID= --50mA
RL=300Ω
D
V
OUT
V
0V
--4V
PW=10µs
D.C.≤1%
IN
Ratings
min typ max
1.43 nC
0.18 nC
0.25 nC
Unit
--0.10
--0.09
--0.08
--0.07
-- A
D
--0.06
--0.05
--0.04
--0.03
Drain Current, I
--0.02
--0.01
0
25
(on) -- Ω
20
DS
15
--3.5V
--6.0V
0
--0.4
ID=30mA
Static Drain-to-Source
On-State Resistance, R
G
P.G
I
D
--4.0V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
-- V
--3.0V
50Ω
DS
--2.5V
Drain-to-Source V oltage, VDS -- V Gate-to-Source Voltage, VGS -- V
RDS(on) -- V
GS
50mA
3LP01C
S
VGS= --1.5V
Ta=25°C
--2.0V
IT00077
--0.20
--0.18
--0.16
--0.14
-- A
D
--0.12
--0.10
--0.08
--0.06
Drain Current, I
--0.04
--0.02
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
I
-- V
D
GS
Ta= --25
RDS(on) -- I
Ta=75°C
--25°C
°C
25°C
75°C
D
25°C
VDS= --10V
IT00078
VGS= --4V
00--1 --2 --35--410--5
Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A
--630--7 --8 --9 --10
IT00079 IT00080
1.0
--0.01
23 57 23
--0.1
No.6645-2/4
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