Sanyo 3LN02SP Specifications

Ordering number : ENN6550

3LN02SP

N-Channel Silicon MOSFET

3LN02SP

Ultrahigh-Speed Switching Applications

Features

•

Low ON resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature Tch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 1.2 A

Package Dimensions

unit : mm

2180

[3LN02SP]

4.0

3.0

0.4

0.5

0.4

123

1.3

0.7

3.0

3.8nom

1.8

0.6

15.0

1.3

0.7

2.2

0.4

1 : Source
2 : Drain
3 : Gate

SANYO : SPA

30 V

±10 V

0.3 A

0.25 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V , ID=150mA 0.4 0.56 S

min typ max

Marking : YD Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71000 TS IM TA-2953

No.6550-1/4

3LN02SP

Continued from preceding page.

Parameter Symbol Conditions

RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω

Static Drain-to-Sourse on-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω

RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω
Input Capacitance Ciss VDS=10V , f=1MHz 30 pF
Output Capacitance Coss VDS=10V , f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 32 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage V

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 160 ns

f

IS=300mA, VGS=0 0.8 1.2 V

min typ max

Switching Time Test Circuit

V

IN

4V
0V

PW=10µs
D.C.≤1%

VDD=15V

D

ID=150mA
RL=100Ω

V

OUT

V

IN

Ratings

Unit

P.G

0.30

3.5V

4.0V

0.25

0.20

-- A
D

0.15

0.10

6.0V

Drain Current, I

0.05

000.1

3.0

2.5

(on) -- Ω

2.0

DS

1.5

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

0.2

80mA

G

3LN02SP

50Ω

I

D

-- V

S

DS

3.0V

2.5V

2.0V

VGS=1.5V

0.3

0.4

0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

ID=150mA

I

-- V

-- A
D

0.6

VDS=10V

0.5

0.4

0.3

0.2

D

GS

Ta= --25°C

Drain Current, I

0.1

0

IT00224 IT00225

Ta=25°C

0

10

7
5

3

(on) -- Ω

2

DS

1.0
7

5

3

Static Drain-to-Source

On-State Resistance, R

2

0.5 1.0 1.5 2.0

Gate-to-Source V oltage, VGS -- V

RDS(on) -- I

D

Ta=75°C

--25°C

25°C

VGS=4V

75°C

25°C

2.5

001

2

3

4

5

6

78910

Gate-to-Source V oltage, VGS -- V

0.1

IT00226 IT00227

0.01

23 57 23 57

Drain Current, ID -- A

0.1

No.6550-2/4

1.0