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Ordering number : ENN6549
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2178
[3LN02N]
5.0
2.0
0.6
14.0
0.45
0.5
0.45
123
5.0
4.0
4.0
0.44
1 : Source
2 : Drain
3 : Gate
Specifications
1.3
1.3
SANYO : NP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature Tch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 1.2 A
30 V
±10 V
0.3 A
0.4 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=150mA 0.4 0.56 S
min typ max
Marking : YD Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952
No.6549-1/4
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3LN02N
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω
Static Drain-to-Sourse on-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω
Input Capacitance Ciss VDS=10V , f=1MHz 30 pF
Output Capacitance Coss VDS=10V , f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 32 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage V
SD
See specified Test Circuit 110 ns
r
See specified Test Circuit 160 ns
f
IS=300mA, VGS=0 0.8 1.2 V
min typ max
Switching Time Test Circuit
Ratings
Unit
V
IN
4V
0V
PW=10µs
D.C.≤1%
P.G
0.30
3.5V
4.0V
0.25
0.20
-- A
D
0.15
0.10
Drain Current, I
0.05
6.0V
VDD=15V
D
I
2.5V
2.0V
ID=150mA
RL=100Ω
S
-- V
D
V
OUT
3LN02N
DS
3.0V
VGS=1.5V
0.6
VDS=10V
0.5
0.4
-- A
D
0.3
0.2
Drain Current, I
0.1
I
D
-- V
GS
Ta= --25°C
75°C
25°C
V
IN
G
50Ω
000.1
3.0
2.5
(on) -- Ω
2.0
DS
1.5
80mA
1.0
0.5
Static Drain-to-Source
On-State Resistance, R
001
0.2
0.3
0.4
0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
ID=150mA
2
3
4
5
6
78910
Gate-to-Source V oltage, VGS -- V
0
IT00224 IT00225
Ta=25°C
IT00226 IT00227
0
10
7
5
3
(on) -- Ω
2
DS
1.0
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
0.1
0.01
0.5 1.0 1.5 2.0
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
D
VGS=4V
Ta=75°C
--25°C
25°C
23 57 23 57
Drain Current, ID -- A
0.1
No.6549-2/4
2.5
1.0