Page 1
Ordering number : ENN6549
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2178
[3LN02N]
5.0
2.0
0.6
14.0
0.45
0.5
0.45
123
5.0
4.0
4.0
0.44
1 : Source
2 : Drain
3 : Gate
Specifications
1.3
1.3
SANYO : NP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature Tch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 1.2 A
30 V
±10 V
0.3 A
0.4 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=150mA 0.4 0.56 S
min typ max
Marking : YD Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952
No.6549-1/4
Page 2
3LN02N
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω
Static Drain-to-Sourse on-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω
Input Capacitance Ciss VDS=10V , f=1MHz 30 pF
Output Capacitance Coss VDS=10V , f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 32 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage V
SD
See specified Test Circuit 110 ns
r
See specified Test Circuit 160 ns
f
IS=300mA, VGS=0 0.8 1.2 V
min typ max
Switching Time Test Circuit
Ratings
Unit
V
IN
4V
0V
PW=10µs
D.C.≤1%
P.G
0.30
3.5V
4.0V
0.25
0.20
-- A
D
0.15
0.10
Drain Current, I
0.05
6.0V
VDD=15V
D
I
2.5V
2.0V
ID=150mA
RL=100Ω
S
-- V
D
V
OUT
3LN02N
DS
3.0V
VGS=1.5V
0.6
VDS=10V
0.5
0.4
-- A
D
0.3
0.2
Drain Current, I
0.1
I
D
-- V
GS
Ta= --25°C
75°C
25°C
V
IN
G
50Ω
000.1
3.0
2.5
(on) -- Ω
2.0
DS
1.5
80mA
1.0
0.5
Static Drain-to-Source
On-State Resistance, R
001
0.2
0.3
0.4
0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
ID=150mA
2
3
4
5
6
78910
Gate-to-Source V oltage, VGS -- V
0
IT00224 IT00225
Ta=25°C
IT00226 IT00227
0
10
7
5
3
(on) -- Ω
2
DS
1.0
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
0.1
0.01
0.5 1.0 1.5 2.0
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
D
VGS=4V
Ta=75°C
--25°C
25°C
23 57 23 57
Drain Current, ID -- A
0.1
No.6549-2/4
2.5
1.0
Page 3
(on) -- Ω
DS
3LN02N
10
7
5
3
2
RDS(on) -- I
Ta=75°C
D
VGS=2.5V
10
7
5
(on) -- Ω
DS
RDS(on) -- I
D
VGS=1.5V
1.0
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
0.1
0.01
25°C
23 57 23 57
--25°C
0.1
Drain Current, ID -- A
3.0
2.5
(on) -- Ω
2.0
DS
1.5
1.0
0.5
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
=2.5V
=80mA, V
I
D
I
D
GS
=150mA, V
GS
Ambient Temperature, Ta -- °C
I
-- V
F
1.0
7
5
3
-- A
F
2
0.1
7
5
3
Forward Drain Current, I
2
SD
Ta=75°C
25°C
--25°C
=4.0V
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
IT00228 IT00229
1.0
0.001 0.01
10
7
5
3
2
1.0
7
5
3
2
Ta=75°C
--25°C
25°C
23 57 23 5
Drain Current, ID -- A
yfs -- I
D
VDS=10V
Ta= --25°C
75°C
25°C
Forward Transfer Admittance, yfs -- S
IT00230
VGS=0
0.1
1000
100
0.01
7
5
3
2
7
5
23 57 23 57
Drain Current, ID -- A
0.1
SW Time -- I
IT00231
D
VDD=15V
VGS=4V
td(off)
t
f
t
r
td(on)
3
Switching Time, SW Time -- ns
2
1.0
Ciss, Coss, Crss -- pF
0.01
100
1.0
0
0.6 0.8 1.0 1.20.2 0.4
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- V
7
5
3
2
10
7
5
3
2
0
5
10 15
DS
20 3025
Drain-to-Source V oltage, VDS -- V
1.4
IT00232 IT00233
f=1MHz
Ciss
Coss
Crss
IT00234 IT00235
10
0.01 0.1
Drain Current, ID -- A
10
9
8
-- V
7
GS
6
5
4
3
2
Gate-to-Sourse V oltage, V
1
0
0
VDS=10V
ID=300mA
0.5
VGS -- Qg
1.0
Total Gate Charge, Qg -- nC
1.5
23 523 57
2.0 2.5
No.6549-3/4
Page 4
P
-- Ta
0.5
0.4
-- W
D
0.3
0.2
0.1
Allowable Power Dissipation, P
0
0 20 40 60 100 120 140
Ambient Temperature, Ta -- °C
D
80
3LN02N
160
IT01988
Note on usage : Since the 3LN02N is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
No.6549-4/4
PS
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