Sanyo 3LN02M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6128

3LN02M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : YD Continued on next page.

SSD
SSG

D

R
R
R

WP ≤ elcycytud,sµ01 ≤ %12.1A

PD

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1I

)no(SD

2I

)no(SD

3I

)no(SD

SD

V

SG

V

SD

D
D
D

Package Dimensions

unit:mm

2158

[3LN02M]

0.3

0.425

2.1

1.250

0.425

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Aµ001=4.03.1V

D

Am051=4.065.0S

D
V,Am051=

V4=9.02.1

SG

V,Am08=

V5.2=2.17.1

SG

V,Am01=

V5.1=6.22.5

SG

3

12

0.65

0.65

2.0

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP3

03V
01±V

3.0A

51.0W

sgnitaR

˚C
˚C

tinU

Ω
Ω
Ω

D1099TS (KOTO) TA-1853 No.6128-1/4

3LN02M

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

zHM1=f,V01=03Fp
zHM1=f,V01=51Fp
zHM1=f,V01=01Fp

tiucriCtseTdeificepseeS23sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS061sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am003=

D

0=8.02.1V

SG

sgnitaR

nimpytxam

Am003=43.2Cn
Am003=83.0Cn
Am003=54.0Cn

tinU

0.30

0.25

0.20

–A

D

0.15

0.10

Drain Current, I

0.05

4V
0V

PW=10µs
D.C.≤1%

P.G

3.5V

4.0V

V

IN

6.0V

VDD=15V

I

2.5V

2.0V

D

D

ID=150mA
RL=100Ω

V

3LN02M

S

-- V

DS

3.0V

OUT

VGS=1.5V

0.6

0.5

0.4

–A

D

0.3

0.2

Drain Current, I

0.1

VDS=10V

I

D

-- V

GS

Ta=--25

75°C

°C

25°C

V

IN

G

50Ω

000.1

0.2

Drain-to-Source Voltage, VDS–V

3.0

2.5

– Ω

2.0

DS(on)

1.5

80mA

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

001

2

Gate-to-Source Voltage, V

0.3

0.4

0.5 0.6 0.7 0.8 0.9 1.0

RDS(on) -- V

ID=150mA

3

4

5

GS

Ta=25°C

6

78910

–V

GS

0

IT00224 IT00225

IT00226 IT00227

0

10

7
5

3

– Ω

2

DS(on)

1.0
7

5

3
2

Static Drain-to-Source

On-State Resistance, R

0.1

0.01

0.5 1.0 1.5 2.0

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

D

VGS=4V

Ta=75°C

--25°C

25°C

23 57 23 57

Drain Current, ID–A

0.1

No.6128-2/4

2.5

1.0