Sanyo 3LN02M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6128

3LN02M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : YD Continued on next page.

SSD
SSG

D

R
R
R

WP ≤ elcycytud,sµ01 ≤ %12.1A

PD

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1I

)no(SD

2I

)no(SD

3I

)no(SD

SD

V

SG

V

SD

D
D
D

Package Dimensions

unit:mm

2158

[3LN02M]

0.3

0.425

2.1

1.250

0.425

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Aµ001=4.03.1V

D

Am051=4.065.0S

D
V,Am051=

V4=9.02.1

SG

V,Am08=

V5.2=2.17.1

SG

V,Am01=

V5.1=6.22.5

SG

3

12

0.65

0.65

2.0

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP3

03V
01±V

3.0A

51.0W

sgnitaR

˚C
˚C

tinU

Ω
Ω
Ω

D1099TS (KOTO) TA-1853 No.6128-1/4

3LN02M

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

zHM1=f,V01=03Fp
zHM1=f,V01=51Fp
zHM1=f,V01=01Fp

tiucriCtseTdeificepseeS23sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS061sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am003=

D

0=8.02.1V

SG

sgnitaR

nimpytxam

Am003=43.2Cn
Am003=83.0Cn
Am003=54.0Cn

tinU

0.30

0.25

0.20

–A

D

0.15

0.10

Drain Current, I

0.05

4V
0V

PW=10µs
D.C.≤1%

P.G

3.5V

4.0V

V

IN

6.0V

VDD=15V

I

2.5V

2.0V

D

D

ID=150mA
RL=100Ω

V

3LN02M

S

-- V

DS

3.0V

OUT

VGS=1.5V

0.6

0.5

0.4

–A

D

0.3

0.2

Drain Current, I

0.1

VDS=10V

I

D

-- V

GS

Ta=--25

75°C

°C

25°C

V

IN

G

50Ω

000.1

0.2

Drain-to-Source Voltage, VDS–V

3.0

2.5

– Ω

2.0

DS(on)

1.5

80mA

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

001

2

Gate-to-Source Voltage, V

0.3

0.4

0.5 0.6 0.7 0.8 0.9 1.0

RDS(on) -- V

ID=150mA

3

4

5

GS

Ta=25°C

6

78910

–V

GS

0

IT00224 IT00225

IT00226 IT00227

0

10

7
5

3

– Ω

2

DS(on)

1.0
7

5

3
2

Static Drain-to-Source

On-State Resistance, R

0.1

0.01

0.5 1.0 1.5 2.0

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

D

VGS=4V

Ta=75°C

--25°C

25°C

23 57 23 57

Drain Current, ID–A

0.1

No.6128-2/4

2.5

1.0

10

7
5

3

– Ω

2

DS(on)

1.0
7
5

3
2

Static Drain-to-Source

On-State Resistance, R

0.1

0.01

3.0

2.5

25°C

23 57 23 57

– Ω

2.0

DS(on)

1.5

1.0

0.5

Static Drain-to-Source

ON-State Resistance, R

1.0

–A

F

0.1

Forward Current, I

--600--40

7
5

3
2

7
5

3
2

--20

RDS(on) -- I

D

Ta=75°C

--25°C

Drain Current, ID–A

0.1

RDS(on) -- Ta

=2.5V

=150mA, V

40

-- V

F

Ta=75°C

GS

SD

60

GS

25°C

=4.0V

--25°C

I

D

I

0

=80mA, V

D

20

I

3LN02M

VGS=2.5V

1.0

IT00228 IT00229

80 100 120 140

IT00230

VGS=0

10

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.001

10

7
5

fs|–S

y

3
2

1.0
7
5

3
2

23 57 23 57

Forward Transfer Admittance, |

1000

100

Switching Time, SW Time – ns

0.1

0.01

7
5

3
2

7
5

3
2

23 57 23 57

RDS(on) -- I

Ta=75°C

--25°C

25°C

Drain Current, ID–A

0.01

yfs

-- I





°C

Ta=--25

25°C

Drain Current, ID–AAmbient Temperature, Ta – ˚C

0.1

SW Time -- I

td(off)

t

f

t

r

td(on)

75

D

VGS=1.5V

0.1

D

VDS=10V

°C

1.0

IT00231

D

VDD=15V
VGS=4V

Ciss,Coss,Crss – pF

0.01

100

1.0

0

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

7
5

3
2

10

7
5

3
2

0

5

0.6 0.8 1.0 1.20.2 0.4

10 15

DS

20 3025

Drain-to-Source Voltage, VDS–V

1.4

IT00232 IT00233

f=1MHz

Ciss

Coss

Crss

IT00234 IT00235

10

10

V

GS –

Gate-to-Source Voltage, V

0.01

VDS=10V

9

ID=300mA

8

7

6

5

4

3

2

1
0

0

Drain Current, ID–A

0.1

VGS -- Qg

0.5

1.0

1.5

Total Gate Charge, Qg – nC

23 5723 57

1.0

2.0 2.5

No.6128-3/4

P

-- Ta

0.20

D

–W

D

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0 20 40 60 100 120 140

Ambient Temperature, Ta – ˚C

80

3LN02M

160

IT00236

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.

PS No.6128-4/4