Page 1
Ordering number : ENN6957
3LN01S
N-Channel Silicon MOSFET
3LN01S
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-Speed Switching.
• 2.5V drive.
Package Dimensions
unit : mm
2192
[3LN01S]
0.3
3
1
0.5
1.6
0.5
0.40.4
0.8
1.6
2
0.2
0.75
0.6
0~0.1
0.1
0.1max
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 0.6 A
30 V
±10 V
0.15 A
0.15 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=80mA 0.15 0.22 S
Marking : YA Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60801 TS IM TA-1922
No.6957-1/4
Page 2
3LN01S
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V , f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 19 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 155 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC
Diode Forward Voltage V
SD
See specified Test Circuit 65 ns
r
See specified Test Circuit 120 ns
f
IS=150mA, VGS=0 0.87 1.2 V
min typ max
Ratings
Unit
Switching Time Test Circuit
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
0.16
0.14
0.12
-- A
0.10
D
0.08
0.06
Drain Current, I
0.04
0.02
0
0
10
9
8
(on) -- Ω
7
DS
6
5
40mA
4
3
0.2
G
50Ω
ID -- V
3.5V
4.0V
6.0V
0.4
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
ID=80mA
VDD=15V
ID=80mA
RL=187.5Ω
D
S
DS
2.5V
3.0V
2.0V
0.6 0.8 1.0
GS
V
OUT
3LN01S
0.30
ID -- V
GS
VDS=10V
0.25
Ta= --25°C
0.20
-- A
D
0.15
VGS=1.5V
0.10
Drain Current, I
0.05
--25°C
0
0
IT00029 IT00030
10
0.5 1.0 1.5 2.0
Ta=75°C
Gate-to-Source V oltage, VGS -- V
RDS(on) -- I
°C
25
D
Ta=25°C
7
5
(on) -- Ω
DS
3
Ta=75°C
°C
25
--25°C
2
°C
75
°C
25
2.5 3.0
VGS=4V
Static Drain-to-Source
On-State Resistance, R
0012134256
Gate-to-Source V oltage, VGS -- V
78910
IT00031
Static Drain-to-Source
On-State Resistance, R
1.0
0.01 0.1
23 57 23 5
Drain Current, ID -- A
IT00032
No.6957-2/4
Page 3
10
7
(on) -- Ω
5
DS
3
2
Static Drain-to-Source
On-State Resistance, R
RDS(on) -- I
Ta=75°C
25°C
--25°C
D
VGS=2.5V
3LN01S
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
Static Drain-to-Source
On-State Resistance, R
2
RDS(on) -- I
°C
Ta=75
--25°C
D
VGS=1.5V
25°C
1.0
0.01 0.1
7
6
5
(on) -- Ω
23 57 23 5
DS
4
3
Static Drain-to-Source
On-State Resistance, R
--600--40 --201020240 60
Ambient Temperature, Ta -- °C
1.0
7
5
3
-- A
2
F
0.1
7
5
3
Forward Current, I
2
Drain Current, ID -- A
RDS(on) -- Ta
=2.5V
GS
-- V
25°C
=4.0V
GS
80 100 120 140 160
SD
--25°C
=40mA, V
I
D
=80mA, V
I
D
I
F
Ta=75°C
IT00033
IT00035
VGS=0
Forward Transfer Admittance, yfs -- S
Switching Time, SW Time -- ns
1.0
1.0
0.1
0.01
1000
100
0.001
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
23 57 23 5
Drain Current, ID -- A
y
0.01
fs -- I
IT00034
D
VDS=10V
°C
Ta= --25
°C
25
75°C
23 57 23 5
Drain Current, ID -- A
SW Time -- I
0.1
IT00036
D
VDD=15V
VGS=4V
t
(off)
d
t
f
t
r
td(on)
0.01
0.60.5 0.80.7 0.9 1.0 1.1 1.2
Diode Forward V oltage, VSD -- V
100
7
5
3
2
10
7
5
Ciss, Coss, Crss -- pF
3
2
1.0
02468101214161820
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
DS
f=1MHz
Drain-to-Source V oltage, VDS -- V
10
IT00037 IT00038
IT00039 IT00040
0.01
10
VDS=10V
9
ID=150mA
8
-- V
7
GS
6
5
4
3
2
Gate-to-Sourse V oltage, V
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
23 57 2
0.1
Drain Current, ID -- A
V
-- Qg
GS
Total Gate Charge, Qg -- nC
No.6957-3/4
Page 4
P
-- Ta
0.20
-- W
D
0.15
0.10
0.05
Allowable Power Dissipation, P
0
0 20406080100120
Ambient Temperature, Ta -- °C
D
3LN01S
140 160
IT01961
Note on usage : Since the 3LN01S is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6957-4/4
PS
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