Sanyo 3LN01N Specifications

Ordering number : ENN6544

3LN01N

N-Channel Silicon MOSFET

3LN01N

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2178

0.6

2.0

[3LN01N]

5.0

14.0

0.45

0.5

0.45

123

5.0

4.0

4.0

0.44

1 : Source
2 : Drain
3 : Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 0.6 A

1.3

1.3

SANYO : NP

30 V

±10 V

0.15 A

0.4 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V , ID=80mA 0.15 0.22 S

min typ max

Marking : YA Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-1991

No.6544-1/4

3LN01N

Continued from preceding page.

Parameter Symbol Conditions

RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω

Static Drain-to-Sourse On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω

RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
Input Capacitance Ciss VDS=10V , f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V , f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 19 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 155 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC
Diode Forward Voltage V

SD

See specified Test Circuit 65 ns

r

See specified Test Circuit 120 ns

f

IS=150mA, VGS=0 0.87 1.2 V

min typ max

Switching Time Test Circuit

V

IN

4V
0V

PW=10µs
D.C.≤1%

VDD=15V

D

ID=80mA
RL=187.5Ω

V

OUT

V

IN

Ratings

Unit

P.G

0.16

0.14

0.12

-- A

0.10

D

0.08

0.06

Drain Current, I

0.04

0.02

0

0

10

9

8

7

(on) -- Ω

DS

6

5

4

ID=40mA

3

G

3LN01N

50Ω

3.5V

4.0V

S

ID -- V

3.0V

DS

2.5V

6.0V

0.2

0.4

0.6 0.8 1.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

80mA

2.0V

VGS=1.5V

ID -- V

0.30

GS

VDS=10V

0.25

Ta= --25°C

0.20

-- A
D

0.15

0.10

75°C

Drain Current, I

0.05

0

0

0.5 1.0 1.5 2.0

IT00029 IT00030

Ta=25°C

10

7

5

(on) -- Ω

DS

3

Gate-to-Source V oltage, VGS -- V

RDS(on) -- I

D

Ta=75°C

25°C

2.5 3.0

VGS=4V

--25°C

2

25°C

Static Drain to Source

On-State Resistance, R

0012134256

Gate-to-Source V oltage, VGS -- V

78910

Static Drain-to-Source

On-State Resistance, R

1.0

IT00031 IT00032

0.01 0.1

23 57 23

Drain Current, ID -- A

No.6544-2/4

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