Sanyo 3LN01M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6138

3LN01M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : YA Continued on next page.

SSD
SSG

D

R
R
R

WP ≤ elcycytud,sµ01 ≤ %16.0A

PD

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1I

)no(SD

2I

)no(SD

3I

)no(SD

SD

V

SG

V

SD

D
D
D

Package Dimensions

unit:mm

2158

[3LN01M]

0.3

0.425

2.1

1.250

0.425

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Aµ001=4.03.1V

D

Am08=51.022.0S

D

V,Am08=

V4=9.27.3

SG

V,Am04=

V5.2=7.32.5

SG

V,Am01=

V5.1=4.68.21

SG

3

12

0.65

0.65

2.0

0.15

0.3 0.6

0.9

nimpytxam

0.2

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : MCP

sgnitaR

03V
01±V

51.0A

51.0W

˚C
˚C

tinU

Ω
Ω
Ω

31000TS (KOTO) TA-1985 No.6138-1/4

3LN01M

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

zHM1=f,V01=0.7Fp
zHM1=f,V01=9.5Fp
zHM1=f,V01=3.2Fp

tiucriCtseTdeificepseeS91sn
tiucriCtseTdeificepseeS56sn
tiucriCtseTdeificepseeS551sn
tiucriCtseTdeificepseeS021sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am051=

D

0=78.02.1V

SG

sgnitaR

nimpytxam

Am051=85.1Cn
Am051=62.0Cn
Am051=13.0Cn

tinU

0.16

0.14

0.12

–A

0.10

D

0.08

0.06

Drain Current, I

0.04

0.02

10

– Ω

DS(on)

P.G

0

0

9

8

7

6

5

4

ID=40mA

3

V

IN

4V
0V

PW=10µs
D.C.≤1%

VDD=15V

D

S

ID=80mA
RL=187.5Ω

V

IN

G

50Ω

ID -- V

3.5V

4.0V

3.0V

6.0V

0.2

0.4

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

80mA

V

OUT

3LN01M

DS

2.5V

2.0V

VGS=1.5V

0.6 0.8 1.0

IT00029 IT00030

GS

Ta=25°C

0.30

0.25

0.20

–A

D

0.15

0.10

Drain Current, I

0.05

10

– Ω

DS(on)

VDS=10V

0

0

7

5

3

2

ID -- V

GS

Ta=--25

0.5 1.0 1.5 2.0

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

D

Ta=75°C

°C

25

--25°C

°C

°C

75

°C

25

2.5 3.0

VGS=4V

Static Drain-to-Source

On-State Resistance, R

0012134256

Gate-to-Source Voltage, V

78910

GS

–V

IT00031

Static Drain-to-Source

On-State Resistance, R

1.0

0.01 0.1

23 57 23 57

Drain Current, ID–A

1.0

IT00032

No.6138-2/4

10

7

– Ω

5

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

RDS(on) -- I

Ta=75°C

25°C

--25°C

3LN01M

D

VGS=2.5V

100

7
5

– Ω

3
2

DS(on)

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

RDS(on) -- I

Ta=75°C

--25°C

D

VGS=1.5V

25°C

1.0

0.01 0.1

7

6

– Ω

5

DS(on)

4

3

Static Drain-to-Source

On-State Resistance, R

--6 00--4 0 --2 01020240 60

23 57 23 57

Ambient Temperature, Ta – ˚C

1.0
7
5

3

–A

2

F

0.1
7

5

Forward Current, I

3
2

Drain Current, ID–A

RDS(on) -- Ta

=2.5V

GS

=40mA, V

I

D

I

D

Ta=75

=80mA, V

I

F

°C

25°C

-- V

=4.0V

GS

80 100 120 140 160

SD

°C

--25

IT00033

IT00035

VGS=0

1.0

fs|–S

y

Forward Transfer Admittance, |

Switching Time, SW Time – ns

1.0

1.0

0.1

0.01

1000

100

0.001

7
5

3
2

7
5

3
2

0.01

7
5

3
2

7
5

3
2

23 57 23 57

Drain Current, ID–A

0.01

yfs

-- I





D

IT00034

VDS=10V

°C

Ta=--25

75°C

23 57 23 57

Drain Current, ID–A

SW Time -- I

25°C

0.1

IT00036

D

VDD=15V
VGS=4V

td(off)

t

f

t

r

td(on)

0.1

1.0

0.01

0.60.5 0.80.7 0.9 1.0 1.1 1.2

Diode Forward Voltage, VSD–V

100

7
5

3
2

10

7
5

Ciss, Coss, Crss – pF

3
2

1.0

0 2 4 6 8 10 12 14 16 18 20

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

DS

Drain-to-Source Voltage, VDS–V

10

IT00037 IT00038

f=1MHz

IT00039 IT00040

0.01

10

VDS=10V

9

ID=150mA

V

8

–

GS

7

6

5

4

3

2

Gate-to-Source Voltage, V

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

23 57 2

0.1

Drain Current, ID–A

V

-- Qg

GS

Total Gate Charge, Qg – nC

No.6138-3/4

P

-- Ta

0.20

D

–W

D

0.15

0.10

0.05

Allowable Power Dissipation, P

0

0 20 40 60 100 120 140

80

Ambient Temperature, Ta – ˚C

3LN01M

160

IT00041

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6138-4/4