Sanyo 3LN01C Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6260
3LN01C
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : YA Continued on next page.
SSD
SSG
D
R
R
R
WP ≤ elcycytud,sµ01 ≤ %1006Am
PD
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1I
)no(SD
2I
)no(SD
3I
)no(SD
SD
V
SG
V
SD
D
D
D
Package Dimensions
unit:mm
2091A
[3LN01C]
0.16
3
1
0.95
0.95
1.9
2.9
V,Am1=
0=03V
SG
V,V03=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Aµ001=4.03.1V
D
Am08=51.022.0S
D
V,Am08=
V4=9.27.3
SG
V,Am04=
V5.2=7.32.5
SG
V,Am01=
V5.1=4.68.21
SG
0.5
2.5
1.5
2
0.5
0 to 0.1
1 : Gate
1.1
0.8
2 : Source
3 : Drain
SANYO : CP
03V
01±V
051Am
52.0W
˚C
˚C
sgnitaR
nimpytxam
tinU
Ω
Ω
Ω
21400TS (KOTO) TA-1987 No.6260-1/4
3LN01C
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01=0.7Fp
zHM1=f,V01=9.5Fp
zHM1=f,V01=3.2Fp
tiucriCtseTdeificepseeS91sn
tiucriCtseTdeificepseeS56sn
tiucriCtseTdeificepseeS551sn
tiucriCtseTdeificepseeS021sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am051=
D
0=78.02.1V
SG
sgnitaR
nimpytxam
Am051=85.1Cn
Am051=62.0Cn
Am051=13.0Cn
tinU
0.16
0.14
0.12
–A
0.10
D
0.08
0.06
Drain Current, I
0.04
0.02
– Ω
DS(on)
V
IN
G
50Ω
VDD=15V
D
S
ID -- V
ID=80mA
RL=187.5Ω
V
OUT
3LN01C
DS
0.30
ID -- V
GS
4V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
VDS=10V
4.0V
3.5V
6.0V
3.0V
2.5V
2.0V
0.25
–A
0.20
D
0.15
Ta=--25°C
75
25°C
°C
VGS=1.5V
0.10
Drain Current, I
0.05
0
0
10
9
8
7
6
5
4
3
0.2
Drain-to-Source Voltage, VDS–V
0.4
RDS(on) -- V
ID=80mA
40mA
0.6 0.8 1.0
IT00029 IT00030
GS
Ta=25°C
– Ω
DS(on)
0
0
0.5 1.0 1.5 2.0
Gate-to-Source Voltage, VGS–V
10
RDS(on) -- I
D
2.5 3.0
VGS=4V
7
5
Ta=75°C
3
25°C
--25°C
2
Static Drain-to-Source
On-State Resistance, R
0012134256
Gate-to-Source Voltage, VGS–V
78910
IT00031
Static Drain-to-Source
On-State Resistance, R
1.0
0.01 0.1
23 57 23 57
Drain Current, ID–A
1.0
IT00032
No.6260-2/4
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