Sanyo 3LN01C Specifications
21400TS (KOTO) TA-1987 No.6260-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6260
3LN01C
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4
0.95
0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2091A
[3LN01C]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Gate
2 : Source
3 : Drain
SANYO : CP
˚C
˚C
Marking : YA Continued on next page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
03V
egatloVecruoS-ot-etaGV
SSG
01±V
)CD(tnerruCniarDI
D
051Am
)eslup(tnerruCniarDI
PD
WP ≤ elcycytud,sµ01 ≤ %1006Am
noitapissiDrewoPelbawollAP
D
52.0W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am1=
SG
0=03V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V03=
SG
0=01Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V8±=
SD
0=01±Aµ
egatloVffotuCV
)ffo(SG
V
SD
I,V01=
D
Aµ001=4.03.1V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01=
D
Am08=51.022.0S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
)no(SD
1I
D
V,Am08=
SG
V4=9.27.3
Ω
R
)no(SD
2I
D
V,Am04=
SG
V5.2=7.32.5
Ω
R
)no(SD
3I
D
V,Am01=
SG
V5.1=4.68.21
Ω
No.6260-2/4
3LN01C
Switching Time Test Circuit
Continued from preceding page.
PW=10µs
D.C.≤1%
4V
0V
V
IN
P.G
50Ω
G
S
D
I
D
=80mA
R
L
=187.5Ω
V
DD
=15V
V
OUT
3LN01C
V
IN
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
ecnaticapaCtupnIssiCV
SD
zHM1=f,V01=0.7Fp
ecnaticapaCtuptuOssoCV
SD
zHM1=f,V01=9.5Fp
ecnaticapaCrefsnarTesreveRssrCV
SD
zHM1=f,V01=3.2Fp
emiTyaleDNO-nruTt
)no(d
tiucriCtseTdeificepseeS91sn
emiTesiRt
r
tiucriCtseTdeificepseeS56sn
emiTyaleDFFO-nruTt
)ffo(d
tiucriCtseTdeificepseeS551sn
emiTllaFt
f
tiucriCtseTdeificepseeS021sn
egrahCetaGlatoTgQV
SD
V,V01=
SG
I,V01=
D
Am051=85.1Cn
egrahCecruoS-ot-etaGsgQV
SD
V,V01=
SG
I,V01=
D
Am051=62.0Cn
egrahC"relliM"niarD-ot-etaGdgQV
SD
V,V01=
SG
I,V01=
D
Am051=13.0Cn
egatloVdrawroFedoiDV
DS
I
S
V,Am051=
SG
0=78.02.1V
0
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6 0.8 1.0
I
D
-- V
DS
V
GS
=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
0
12
1
34
2
56
3
4
5
6
7
8
9
10
78910
R
DS
(on) -- V
GS
Ta=25°C
0.01 0.1
23 57 23 57
10
7
5
3
2
1.0
1.0
R
DS
(on) -- I
D
0
0
0.5 1.0 1.5 2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5 3.0
I
D
-- V
GS
V
DS
=10V
Ta=--25°C
25°C
75
°C
25°C
--25°C
Ta=75°C
IT00029 IT00030
IT00031
IT00032
V
GS
=4V
40mA
I
D
=80mA
Drain Current, I
D
–A
Drain-to-Source Voltage, V
DS
–V
Drain Current, I
D
–A
Gate-to-Source Voltage, V
GS
–V
Gate-to-Source Voltage, V
GS
–V
Static Drain-to-Source
On-State Resistance, R
DS(on)
– Ω
Static Drain-to-Source
On-State Resistance, R
DS(on)
– Ω
Drain Current, I
D
–A
Loading...