Sanyo 2SK937 Specifications
Ordering number:EN3006
N-Channel Junction Silicon FET
2SK937
High-Frequency
General-Purpose Amplifier Applications
Features |
Package Dimensions |
· Adoption of FBET process. |
unit:mm |
· Large yfs . |
2019B |
· Small Ciss. |
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[2SK937] |
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5.0 |
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4.0 |
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4.0 |
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5.0 |
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0.45 |
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0.5 |
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0.45 |
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0.6 |
2.0 |
0.44 |
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14.0 |
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1 : Source |
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2 : Gate |
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1 |
2 |
3 |
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3 : Drain |
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JEDEC : TO-92 |
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EIAJ : SC-43 |
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Specifications |
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1.3 |
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1.3 |
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SANYO : NP |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
Symbol |
Conditions |
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Ratings |
Unit |
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Drain-to-Source Voltage |
VDSX |
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40 |
V |
Gate-to-Drain Voltage |
VGDS |
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–40 |
V |
Gate Current |
IG |
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10 |
mA |
Drain Current |
ID |
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100 |
mA |
Allowable Power Dissipation |
PD |
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300 |
mW |
Junction Temperature |
Tj |
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150 |
˚C |
Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
Conditions |
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Ratings |
Unit |
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min |
typ |
max |
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Gate-to-Drain Breakdown Voltage |
V(BR)GDS |
IG=–10µA, VDS=0 |
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–40 |
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V |
Gate-to-Source Leakage Current |
IGSS |
VGS=–20V, VDS=0 |
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–1.0 |
nA |
Zero-Gate Voltage Drain Current |
IDSS |
VDS=10V, VGS=0 |
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40* |
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75* |
mA |
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=100µA |
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–2.0 |
–3.0 |
–5.0 |
V |
Forward Transfer Admittance |
| yfs |1 VDS=10V, ID=10mA, f=1kHz |
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10 |
15 |
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mS |
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| yfs |2 VDS=10V, VGS=0, f=1kHz |
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22 |
30 |
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mS |
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* : The 2SK937 is classified by IDSS as follows (unit : mA) : |
Continued on next page. |
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40 |
Y3 |
52 |
48 |
Y4 |
63 |
57 |
Y5 |
75 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/3289MO, TS No.3006–1/3
2SK937
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Input Capacitance |
Ciss |
VDS=10V, VGS=0, f=1MHz |
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11 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=10V, VGS=0, f=1MHz |
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2.5 |
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pF |
Noise Figure |
NF |
VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz |
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1.5 |
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dB |
No.3006–2/3
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