Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
High-Frequency
Low-Noise Amplifier Applications
Ordering number:EN2841
2SK932
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· AM tuner RF amplifier, low-noise amplifier.
Features
· Adoption of FBET process.
· Large yfs.
· Small Ciss.
· Ultralow noise figure.
· Ultrasmall-sized package permitting 2SK932-applied
sets to be made smaller and slimmer.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
XSD
SDG
G
D
D
Package Dimensions
unit:mm
2050A
[2SK932]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
1.1
0 to 0.1
1 : Source
2 : Drain
3 : Gate
SANYO : CP
51V
51–V
01Am
05Am
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V5=
* : The 2SK932 is classified by I
5.8120.50.21223.70.71320.010.42425.41
(Note) Marking : E
I
rank : 21, 22, 23, 24
DSS
as follows (unit : mA) : Continued on next page.
DSS
I
SDG)RB(
G
V
SSG
V
SSD
V
)ffo(SG
V,Aµ01–=
V0=51–V
SD
V,V01–=
SG
V,V5=
SD
I,V5=
SD
V0=0.1–An
SD
V0=*0.5*0.42Am
SG
Aµ001=2.0–6.0–4.1–V
D
SG
zHk1=f,V0=5205Sm
nimpytxam
51099TH (KT)/N148MO, TS No.2841–1/4
sgnitaR
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDk1=gR,V5= Ω I,
2SK932
SG
SG
zHM1=f,V0=01Fp
zHM1=f,V0=0.3Fp
D
zHk1=f,Am1=5.1Bd
No.2841–2/4