Sanyo 2SK545 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
Impedance Converter Applications
Ordering number:EN1789B
2SK545
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Applications
· Impedance converter applications.
· Infrared sensor.
Features
· Small I
· Small Ciss.
· Ultracompact package permitting 2SK545-applied
sets to be compact.
GSS
.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
SSD
SDG
G
D
D
Package Dimensions
unit:mm
2050A
[2SK545]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Source
1.1
2 : Drain
3 : Gate
SANYO : CP
04V
04–V
01Am
1Am
521Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V01=
ecnaticapaCtupnIssiCVSDV,V01=
ecnaticapaCrefsnarTesreveRssrCVSDV,V01=
* The 2SK545 is classified by I
(Note) Marking : B
I
rank : 10, 11, 12
DSS
as follows (unit : µA) :
DSS
I
SDG)RB(
V
SSG
*VSDV,V01=
SSD
V
)ffo(SG
V,Aµ01–=
D
SG
SD
0=04–V
SD
V,V02–=
0=005–Ap
SD
0=*03*003µA
SG
I,V01=
Aµ1=5.1–0.4–V
D
SG
SG
SG
080103081110600321051
zHk1=f,0=50.031.0Sm
zHM1=f,0=7.1Fp
zHM1=f,0=7.0Fp
nimpytxam
42099TH (KT)/O2196TS (KOTO) 8-7809/6037KI/3105KI, MT No.1789–1/3
sgnitaR
tinU
2SK545
No.1789–2/3
Loading...