Sanyo 2SK544 Specifications

Ordering number : ENN1792D

2SK544

N-Channel Silicon MOSFET

2SK544

FM Tuner, VHF Amplifier Applications

Features

Package Dimensions

•Low noise : NF=1.8dB typ (f=100MHz).

•High power gain : PG=27dB typ (f=100MHz).

•Small reverse transfer capacitance : Crss=0.035pF (VDS=10V, f=1MHz).

Specifications

Absolute Maximum Ratings at Ta=25°C

unit : mm

2040A

	4.0	[2SK544]
		3.0
0.4		1.8
0.5
		0.6
0.4		15.0
1	2	3
1.3		1.3
0.7		0.7
	3.0
	3.8nom

2.2

0.4

1 : Drain

2 : Source

3 : Gate

SANYO : SPA

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDS		20	V
Gate-to-Source Voltage	VGS		±5	V
Drain Current	ID		30	mA
Allowable Power Dissipation	PD		300	mW
Channel Temperature	Tch		125	°C
Storage Temperature	Tstg		--55 to +150	°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Voltage

VDSX

VGS= --4V, ID=100μA

20

V

Gate-to-Source Leakage Current

IGSS

VDS=0, VGS=±5V

10

nA

Zero-Gate Voltage Drain Current

IDSS*

VDS=10V, VGS=0

1.2*

12*

mA

Cutoff Voltage

VGS(off)

VDS=10V, ID=100μA

--2.5

V

* : The 2SK544 is classified by IDSS as follows (unit : mA) :

Continued on next page.

Rank

D

E

F

IDSS

1.2 to 3.0

2.5 to 6.0

5.0 to 12

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM / 42899 TH (KT) / 6037 TA / 2075 KI, TS No.1792-1/5

2SK544

Continued from preceding page.

	Parameter	Symbol	Conditions		Ratings		Unit
				min	typ	max
	Forward Transfer Admittance	½yfs½	VDS=10V, VGS=0, f=1kHz		11		mS
	Input Capacitance	Ciss	VDS=10V, VGS=0, f=1MHz		2.4		pF
	Reverse Transfer Capacitance	Crss	VDS=10V, VGS=0, f=1MHz		0.035		pF
	Power Gain	PG	VDS=10V, VGS=0, f=100MHz		27		dB
	Noise Figure	NF	See specified Test Circuit.		1.8	3.0	dB

	24
	20
mA	16
--
D
I
Current,	12
Drain	8
	4
	0
	0
mS	20
--	16
|
yfs
|
Admittance,	12
Transfer	8
Forward	4
	0
	--1.5
	3
	2
V
--
(off)	--1.0
GS	7
V
Voltage,	5
Cutoff	3
	2
	--0.1
	5		7

ID -- VDS

V

.2V

=1

GS

1.0V

0.8V

0.6V

0.4V

0.2V

0V

--0.2V

--0.4V

2

4

6

8

10

12

Drain-to-Source Voltage, VDS

-- V

ITR00819

|yfs| -- VGS

VDS=10V

f=1kHz

I DSS

=10mA

8mA

5mA

3mA

--1.0	--0.5	0	0.5	1.0	1.5
Gate-to-Source Voltage, VGS				-- V	ITR00821
	VGS(off)		-- IDSS

VDS=10V

1.0	2	3	5	7	10	2
	Drain Current, IDSS -- mA					ITR00823

Drain Current, ID -- mA

Forward Transfer Admittance, |yfs| -- mS

Forward Transfer Admittance, |yfs| -- mS

24										ID -- VGS
																				VDS=10V
20
16
12
											=10mA		8mA	5mA
										I	DSS						3mA
8
4
0
--1.5				--1.0			--0.5				0					0.5				1.0			1.5
						Gate-to-Source Voltage, VGS													-- V				ITR00820
3										|yfs| -- ID
																						f=1kHz
2
10
7
5
3
2
5		7		1.0			2				3			5				7		10			2
							Drain Current, ID -- mA
																							ITR00822
16								|yfs| -- IDSS
																				VDS=10V
																				VGS=0
14																				f=1kHz
12
10
8
6
4
5		7		1.0			2				3			5				7		10			2
							Drain Current, IDSS -- mA
																							ITR00824

No.1792-2/5