Sanyo 2SK544 Specifications

Ordering number : ENN1792D

2SK544

N-Channel Silicon MOSFET

2SK544

FM Tuner, VHF Amplifier Applications

Features

•

Low noise : NF=1.8dB typ (f=100MHz).

• High power gain : PG=27dB typ (f=100MHz).

• Small reverse transfer capacitance : Crss=0.035pF

(VDS=10V, f=1MHz).

Package Dimensions

unit : mm

2040A

[2SK544]

4.0

0.4

0.5

0.6

0.4

123

1.3

1.3

2.2

3.0

1.8

15.0

0.4

1 : Drain

0.7

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current I
Allowable Power Dissipation P
Channel T emperature T ch 125 °C
Storage T emperature Tstg --55 to +150 °C

DS
GS

D

D

3.0

3.8nom

0.7

2 : Source
3 : Gate

SANYO : SPA

20 V
±5V
30 mA

300 mW

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions
Drain-to-Source Voltage V

Gate-to-Source Leakage Current I
Zero-Gate Voltage Drain Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA --2.5 V

* : The 2SK544 is classified by I

Rank D E F
I

DSS

1.2 to 3.0 2.5 to 6.0 5.0 to 12

as follows (unit : mA) :

DSS

DSX

GSS

DSS

VGS= --4V, ID=100µA20V
VDS=0, VGS=±5V 10 nA

*VDS=10V , VGS=0 1.2* 12* mA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM / 42899 TH (KT) / 6037 TA / 2075 KI, TS

No.1792-1/5

Unit

2SK544

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance
Input Capacitance Ciss VDS=10V, VGS=0, f=1MHz 2.4 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 0.035 pF
Power Gain PG VDS=10V , VGS=0, f=100MHz 27 dB
Noise Figure NF See specified Test Circuit. 1.8 3.0 dB

yfs



VDS=10V , VGS=0, f=1kHz 11 mS



min typ max

Ratings

Unit

ID -- V

24

=1.2V

V

20

GS

DS

1.0V

0.8V

16

-- mA
D

12

8

Drain Current, I

4

0.6V

0.4V

0.2V
0V

--0.2V

--0.4V

0

024681012

Drain-to-Source V oltage, VDS -- V

20

|yfs| -- V

GS

ITR00819

VDS=10V
f=1kHz

-- mS

16

|

yfs

|

12

8

=10mA

DSS

I

8mA

5mA

3mA

ID -- V

DSS

I

GS

=10mA

8mA

5mA

3mA

-- mA
D

24

20

16

12

8

Drain Current, I

4

0

--1.5 --1.0 --0.5 0 0.5 1.0 1.5

Gate-to-Source V oltage, VGS -- V

-- mS

|

yfs

|

3

2

10

7

5

|yfs| -- I

D

VDS=10V

ITR00820

f=1kHz

4

Forward Transfer Admittance,

0

--

--

1.5 1.5

1.0

--

0.5

0.5 1.00

Gate-to-Source V oltage, VGS -- V

3

2

--

1.0

(off) -- V

7

GS

5

3

2

Cutoff Voltage, V

--

0.1

VGS(off) -- I

1.0

Drain Current, I

23 5757

DSS

DSS

-- mA

ITR00821

VDS=10V

10

ITR00823

3

Forward Transfer Admittance,

2

1.0

Drain Current, ID -- mA

16

|yfs| -- I

DSS

532

10

2757

ITR00822

VDS=10V
VGS=0

-- mS

|

yfs

|

14

12

10

8

6

f=1kHz

Forward Transfer Admittance,

2

4

1.0

Drain Current, I

DSS

532

-- mA

10

2757

ITR00824

No.1792-2/5