Sanyo 2SK3557 Specifications

Ordering number : ENN7169

Preliminary

2SK3557

N-Channel Junction Silicon FET

2SK3557

Low-Noise HF Amplifier Applications

Applications

•

AM tuner RF amplifier.

•

Low noise amplifier.

Package Dimensions

unit : mm

2050A

[2SK3557]

Features

•

Large yfs.

•

Small Ciss.

•

Ultrasmall-sized package permitting 2SK3557­applied sets to be made smaller and slimer.

•

Ultralow noise figure.

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

2.5

1.5

0.5

1.1

0.8

0.16

0 to 0.1

1 : Source
2 : Drain
3 : Gate

SANYO : CP

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

DSX
GDS

G
D

D

15 V

--15 V
10 mA
50 mA

200 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Gate-to-Drain Breakdown Voltage V
Gate Cutoff Current I
Cutoff Voltage VGS(off) VDS=5V, ID=100µA --0.3 --0.7 --1.5 V

Marking : IR Continued on next page.

(BR)GDSIG

GSS

=--10µA, VDS=0 --15 V

VGS=--10V, VDS=0 --1.0 nA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60502 TS IM TA-3622

No.7169-1/4

2SK3557





Continued from preceding page.

Parameter Symbol Conditions

Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 10.0 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz 2.9 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB

DSS



yfs

VDS=5V, VGS=0 10* 32* mA
VDS=5V, VGS=0, f=1kHz 24 35 mS



Ratings

min typ max

Unit

*The 2SK3557 is classified by I

Rank 6 7

-- mA
D

I

DSS

20

16

12

8

10.0 to 20.0 16.0 to 32.0

as follows : (unit : mA)

DSS

I

-- V

D

DS

=0

V

GS

--0.1V

--0.2V

--0.3V

Drain Current, I

4

--0.7V

0

0.4 0.8 1.2 1.6 2.0 2.4

0

--0.6V

--0.4V

--0.5V

Drain-to-Source V oltage, VDS -- V

I

22

VDS=5V

20
18
16
14

-- mA
D

12
10

8
6

Drain Current, I

4
2

0

--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2

D -- VGS

=30mA

DSS

I

20mA

15mA

Gate-to-Source V oltage, VGS -- V

7

V

=5V

DS

f=1kHz

5

yfs -- I

D

-- mS

3

yfs

2

I

DSS

=15mA

10mA

30mA

ITR02749

IT04224

I

-- V

20

16

D

DS

=0

V

GS

--0.1V

-- mA

12

D

--0.2V

8

Drain Current, I

4

--0.3V

--0.4V

--0.5V

0

0

24681012

--0.7V

--0.6V

Drain-to-Source V oltage, VDS -- V

I

16

VDS=5V
I

=15mA

DSS

14

12

10

-- mA
D

8

6

Drain Current, I

4

2

0

--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2

D -- VGS

Ta=--25°C

75°C

25°C

Gate-to-Source V oltage, VGS -- V

100

yfs -- I

7

5

DSS

ITR02750

ITR02752

VDS=5V
VGS=0
f=1kHz

10

7
5

3

Forward Transfer Admittance,

2

3

75235723

1.0

10

Drain Current, ID -- mA

5

IT04225

Forward Transfer Admittance, yfs -- mS

3

2

10

7

10

Drain Current, I

23 5

DSS

-- mA

IT04226

No.7169-2/4