SANYO 2SK3495 Datasheet

Ordering number : ENN6970

2SK3495

N-Channel Silicon MOSFET

2SK3495

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

• Meets radial taping.

Package Dimensions

unit : mm

2087A

[2SK3495]

6.9

4.5

1.01.0

0.6

0.9

123

0.5

2.5

1.45

1.0

1.0

4.0

0.45

1 : Source
2 : Drain

Specifications

2.54

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4.8 A

2.54

3 : Gate
SANYO : NMP

60 V

±20 V

1.2 A

1W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=0.6A, VGS=10V 380 500 mΩ
RDS(on)2 ID=0.6A, VGS=4V 500 680 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=0.6A 1.0 1.5 S

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52501 TS IM TA-3256

No.6970-1/4

Unit

2SK3495

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 70 pF
Output Capacitance Coss VDS=20V , f=1MHz 20 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 4 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.2A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.2A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 3 ns

r

See specified Test Circuit 4 ns

f

IS=1.2A, VGS=0 0.86 1.2 V

Switching Time Test Circuit

VDD=30V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=0.6A
RL=50Ω

D

V

OUT

Ratings

min typ max

Unit

P.G

1.4

1.2

1.0

-- A
D

0.8

0.6

0.4

Drain Current, I

0.2

0

0 0.4 0.60.2 0.8 1.0 1.2 1.4 1.6 1.8 2.0

8.0V

10.0V

6.0V

4.0V

3.5V

I

D

3.0V

50Ω

5.0V

-- V

DS

S

V

GS

Drain-to-Source V oltage, VDS -- V

1200

1000

RDS(on) -- V

GS

2SK3495

I

-- V

-- A
D

2.5

VDS=10V

2.0

1.5

D

GS

=2.5V

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

IT03234 IT03235

Ta=25°C

1000

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

Ta=75°C

25

ID=0.6A

800

--25

C

°

C

°

(on) -- mΩ

800

DS

600

400

200

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source V oltage, VGS -- V

IT03236

(on) -- mΩ

DS

600

=0.6A, V

I

400

200

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

=0.6A, V

I

D

GS

GS

=4V

=10V

Ambient Temperature, Ta -- °C

IT03237

No.6970-2/4