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Ordering number : ENN6970
2SK3495
N-Channel Silicon MOSFET
2SK3495
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Meets radial taping.
Package Dimensions
unit : mm
2087A
[2SK3495]
6.9
4.5
1.01.0
0.6
0.9
123
0.5
2.5
1.45
1.0
1.0
4.0
0.45
1 : Source
2 : Drain
Specifications
2.54
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 4.8 A
2.54
3 : Gate
SANYO : NMP
60 V
±20 V
1.2 A
1W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=0.6A, VGS=10V 380 500 mΩ
RDS(on)2 ID=0.6A, VGS=4V 500 680 mΩ
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=0.6A 1.0 1.5 S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501 TS IM TA-3256
No.6970-1/4
Unit
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2SK3495
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=20V , f=1MHz 70 pF
Output Capacitance Coss VDS=20V , f=1MHz 20 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 4 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.2A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.2A 0.5 nC
Diode Forward Voltage V
SD
See specified Test Circuit 3 ns
r
See specified Test Circuit 4 ns
f
IS=1.2A, VGS=0 0.86 1.2 V
Switching Time Test Circuit
VDD=30V
V
10V
0V
PW=10µs
D.C.≤1%
IN
V
IN
G
ID=0.6A
RL=50Ω
D
V
OUT
Ratings
min typ max
Unit
P.G
1.4
1.2
1.0
-- A
D
0.8
0.6
0.4
Drain Current, I
0.2
0
0 0.4 0.60.2 0.8 1.0 1.2 1.4 1.6 1.8 2.0
8.0V
10.0V
6.0V
4.0V
3.5V
I
D
3.0V
50Ω
5.0V
-- V
DS
S
V
GS
Drain-to-Source V oltage, VDS -- V
1200
1000
RDS(on) -- V
GS
2SK3495
I
-- V
-- A
D
2.5
VDS=10V
2.0
1.5
D
GS
=2.5V
1.0
Drain Current, I
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IT03234 IT03235
Ta=25°C
1000
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Ta
Ta=75°C
25
ID=0.6A
800
--25
C
°
C
°
(on) -- mΩ
800
DS
600
400
200
Static Drain-to-Source
On-State Resistance, R
0
02468101214161820
Gate-to-Source V oltage, VGS -- V
IT03236
(on) -- mΩ
DS
600
=0.6A, V
I
400
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
D
=0.6A, V
I
D
GS
GS
=4V
=10V
Ambient Temperature, Ta -- °C
IT03237
No.6970-2/4